KEC BF599, BFS20 Schematic [ru]
SEMICONDUCTOR
BFS20/BF599
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
BFS20
Emitter-Base Voltage
BF599 5
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
I
P
T
T
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
LL
MILLIMETERS
DIM
A
B
C
2
H
1
40 V
A
G
25 V
4
V
C
C
E
C
j
stg
25 mA
-25 mA
200 mW
150
-65ᴕ150
ᴱ
ᴱ
PP
N
K
1. EMITTER
2. BASE
3. COLLECTOR
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base
Breakdown Voltage
BFS20
BF599 5
BFS20
Collector Cut-off Current
BF599
DC Current Gain
BFS20
Base-Emitter Voltage
BF599 - 750 -
BFS20
Transition Frequency
BF599 - 550 -
Collector Output Capacitance
V
(BR)CBO
V
(BR)CEOIC
V
(BR)EBO
I
CBO
h
V
BE(ON)
f
C
SOT-23
IC=10ỌA, IE=0
=2mA, IB=0
IE=10ỌA, IC=0
VCB=20V, IE=0
VCB=20V, IE=0, Ta=150ᴱ
VCB=40V, IE=0
FE
VCE=10V, IC=7mA
VCE=10V, IC=7mA
T
ob
VCE=10V, IC=7mA, f=100MHz
VCB=10V, f=1MHz, IE=0
40 - - V
25 - - V
4
- - V
- - 100 nA
- - 10
- - 100 nA
40 - - -
- 750 900
275 550 -
- 0.35 - pF
ỌA
mV
MHz
MARK SPEC
TYPE MARK
BFS20 G1
Marking
Type Name
G1
Lot No.
Type Name
Lot No.
G2
BF599 G2
1999. 11. 30 1/1
Revision No : 2
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