KEC 2N7002A Schematic [ru]
2009. 7. 2 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 7
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
VDS=60V, VGS=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
VGS=20V, VDS=0V
- - 1
A
Gate-Body Leakage, Reverse
I
GSSR
VGS=-20V, VDS=0V
- - -1
A
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage (RGS1 )
V
DGR
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
115
mA
Pulsed
I
DP
800
Drain Power Dissipation
P
D
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
E
B
LL
A
G
2
H
1
N
C
1. SOURCE
2. GATE
3. DRAIN
3
PP
M
K
SOT-23
DIM MILLIMETERS
A
B
C
D
D
E
G 1.90
H
J
K
L
M
N
J
P7
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
G
D
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
Marking
Type Name
WB
Lot No.
2009. 7. 2 2/4
2N7002A
Revision No : 7
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 1)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage
V
th
VDS=VGS, ID=250 A
1 2.1 2.5 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=500mA
- 1.8 5
VGS=5V, ID=50mA
- - 5
Drain-Source ON Voltage
V
DS(ON)
VGS=10V, ID=500mA
- 0.9 2.5
V
VGS=5V, ID=50mA
- - 0.25
On State Drain Current
I
D(ON)
VGS=10V, VDS2 V
DS(ON)
500 - - mA
Forward Transconductance
g
FS
VDS=2V
DS(ON)
, ID=200mA
80 320 - mS
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1MHz
- 20 50
pFReverse Transfer Capacitance
C
rss
- 4 5
Output Capacitance
C
oss
- 11 25
Switching Time
Turn-On Time
t
on
VDD=30V, RL=150 , ID=200mA,
V
GS
=10V, R
GEN
=25
- - 20
nS
Turn-Off Time
t
off
- - 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Maximum Continuous Drain-Source
Diode Forward Current
I
S
- - - 115 mA
Maximum Pulsed Drain-Source
Diode Forward Current
I
SM
- - - 800 mA
Drain-Source Diode Forward Voltage
V
SD
VGS=0V, IS=115mA (Note1)
- 0.88 1.5 V
Note 1) Pulse Test : Pulse Width 300 , Duty Cycle 2.0%
SWITCHING TIME TEST CIRCUIT
V
DD
R
L
DUT
V
OUT
V
IN
V
GS
R
GEN
G
D
S
t
OUTPUT, V
INPUT, V
d(on)
IN
t
on
OUT
50% 50%
10%
t
off
t
t
d(off)
r
90%
10%
PULSE WIDTH
10%
90%
t
f
90%
INVERTED
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