2009. 7. 2 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 7
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
VDS=60V, VGS=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
VGS=20V, VDS=0V
- - 1
A
Gate-Body Leakage, Reverse
I
GSSR
VGS=-20V, VDS=0V
- - -1
A
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage (RGS1 )
V
DGR
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
115
mA
Pulsed
I
DP
800
Drain Power Dissipation
P
D
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
E
B
LL
A
G
2
H
1
N
C
1. SOURCE
2. GATE
3. DRAIN
3
PP
M
K
SOT-23
DIM MILLIMETERS
A
B
C
D
D
E
G 1.90
H
J
K
L
M
N
J
P7
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
G
D
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
Marking
Type Name
WB
Lot No.
2009. 7. 2 2/4
2N7002A
Revision No : 7
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 1)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage
V
th
VDS=VGS, ID=250 A
1 2.1 2.5 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=500mA
- 1.8 5
VGS=5V, ID=50mA
- - 5
Drain-Source ON Voltage
V
DS(ON)
VGS=10V, ID=500mA
- 0.9 2.5
V
VGS=5V, ID=50mA
- - 0.25
On State Drain Current
I
D(ON)
VGS=10V, VDS2 V
DS(ON)
500 - - mA
Forward Transconductance
g
FS
VDS=2V
DS(ON)
, ID=200mA
80 320 - mS
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1MHz
- 20 50
pFReverse Transfer Capacitance
C
rss
- 4 5
Output Capacitance
C
oss
- 11 25
Switching Time
Turn-On Time
t
on
VDD=30V, RL=150 , ID=200mA,
V
GS
=10V, R
GEN
=25
- - 20
nS
Turn-Off Time
t
off
- - 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Maximum Continuous Drain-Source
Diode Forward Current
I
S
- - - 115 mA
Maximum Pulsed Drain-Source
Diode Forward Current
I
SM
- - - 800 mA
Drain-Source Diode Forward Voltage
V
SD
VGS=0V, IS=115mA (Note1)
- 0.88 1.5 V
Note 1) Pulse Test : Pulse Width 300 , Duty Cycle 2.0%
SWITCHING TIME TEST CIRCUIT
V
DD
R
L
DUT
V
OUT
V
IN
V
GS
R
GEN
G
D
S
t
OUTPUT, V
INPUT, V
d(on)
IN
t
on
OUT
50% 50%
10%
t
off
t
t
d(off)
r
90%
10%
PULSE WIDTH
10%
90%
t
f
90%
INVERTED
2009. 7. 2 3/4
2N7002A
Revision No : 7
j
2.0
COMMON SOURCE
Ta=25 C
1.5
D
1.0
0.5
DRAIN CURRENT I (A)
0
0
1
DRAIN-SOURCE VOLTAGE V (V)
3.0
COMMON SOURCE
V =10V
GS
2.5
2.0
I - V
DDS
8V
9V
10V
7V
6V
5V
4V
V =3V
GS
2345
DS
R - I
DS(ON) D
Ta=25 C
R - T
DS(ON) j
4.0
COMMON SOURCE
V =10V
GS
I =500mA
D
3.0
2.0
1.0
DS(ON)
R (Ω) (NORMALIZED)
DRAIN SOURCE ON- RESISTANCE
-500-25
0255075100 125 150
JUNCTION TEMPERATURE T ( C)
I - V
DGS
2.0
COMMON SOURCE
V =10V
1.6
D
GS
1.2
Ta=-55 C
j
125 C
a=
T
1.5
1.0
DS(ON)
R (Ω) (NORMALIZED)
DRAIN SOURCE ON- RESISTANCE
0.5
0
0.2
0.4 0.6 0.8 1.0
DRAIN CURRENT I (A)
V - T
th j
1.1
COMMON SOURCE
1.05
V =V
I =1mA
1.0
0.95
0.9
th
V (NORMALIZED)
0.85
0.8
GATE-SOURCE THRESHOLD VOLTAGE
-50
-25
0255075100125150
JUNCTION TEMPERATURE T ( C)
D
DS GS
D
0.8
0.4
DRAIN CURRENT I (A)
0
0
2
46810
GATE-SOURCE VOLTAGE V (V)
I - V
SSD
30
COMMON
10
S
SOURCE
V =0
GS
3
1
0.3
Ta=125 C
0.1
0.03
REVERSE DRAIN CURRENT I (A)
0.01
0.2
0.4 0.6 0.8 1.0 1.2 1.4
BODY DIODE FORWARD VOLTAGE V (V)
Ta=25 C
Ta=25 C
GS
Ta=-55 C
SD
2009. 7. 2 4/4
2N7002A
Revision No : 7
100
50
30
10
5
COMMON SOURCE
3
V =0
CAPACITANCE C (pF)
GS
f=1MHz
Ta=25 C
1
1105330
DRAIN-SOURCE VOLTAGE V (V)
2
1
0.5
D
0.3
DS(ON)
R LIMIT
0.1
0.05
0.03
DRAIN CURRENT I (A)
SINGLE PULSE
V =10V
0.01
0.005
GS
Ta=25 C
1310 100305
DRAIN-SOURCE VOLTAGE V (V)
C - V
I - V
DS
DDS
10mS
100mS
1
s
10s
DC
DS
DS
C
C
100µs
1mS
50
V - Q
GS g
10
COMMON SOURCE
V =25V
8
6
4
DS
I =115mA
D
GS
iss
C
oss
rss
2
GATE-SOURCE VOLTAGE V (V)
0
50
0
0.4
0.8 1.2 1.6 2.0
GATE CHARGE Q (nC)
P - Ta
D
g
350
D
300
250
200
150
100
50
0
DRAIN POWER DISSIPATION P (mW)
02040
60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
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