KEC 2N7002 Schematic [ru]
SEMICONDUCTOR
TECHNICAL DATA
2N7002
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 4
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
VDS=60V, VGS=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
VGS=20V, VDS=0V
- - 100 nA
Gate-Body Leakage, Reverse
I
GSSR
VGS=-20V, VDS=0V
- - -100 nA
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
300
mA
Pulsed
(Note 1)
I
DP
1200
Drain Power Dissipation
(Note 2)
P
D
300 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Package mounted on a glass epoxy PCB(100mm21mm)
E
B
LL
DIM
MILLIMETERS
_
A
B
C
A
G
2
H
1
PP
N
C
K
1. SOURCE
2. GATE
3. DRAIN
D
3
M
D
E
G
H
J
K
L
M
N
J
P
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
Marking
Type Name
Lot No.
WA
2N7002
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage
V
th
VDS=VGS, ID=250 A
1.1 1.8 2.3 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=500mA
- 1.2 1.8
VGS=5V, ID=50mA
- 1.5 2.1
Drain-Source ON Voltage
V
DS(ON)
VGS=10V, ID=500mA
- 0.6 0.9
V
VGS=5V, ID=50mA
- 0.075 0.105
On State Drain Current
I
D(ON)
VGS=10V, VDS= 2 V
DS(ON)
500 - - mA
Forward Transconductance
g
FS
VDS=10V, ID=500mA
200 580 - mS
Drain-Source Diode Forward Voltage
V
SD
VGS=0V, IS=200mA (Note1)
- 0.78 1.15 V
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1MHz
- 47.1 -
pFReverse Transfer Capacitance
C
rss
- 3.5 -
Output Capacitance
C
oss
- 8.8 -
Switching Time
Turn-On Time
t
on
VDD=30V, RL=155 , ID=190mA,
V
GS
=10V
- 8.8 nS
Turn-Off Time
t
off
- 14.8 -
(Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%
SWITCHING TIME TEST CIRCUIT
V
IN
V
GS
G
V
D
DD
R
S
L
DUT
V
OUT
t
OUTPUT, V
INPUT, V
d(on)
IN
OUT
10%
t
on
t
t
d(off)
r
90%
10%
50% 50%
PULSE WIDTH
t
off
10%
90%
t
f
90%
INVERTED
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