SEMICONDUCTOR
TECHNICAL DATA
2N7002
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 4
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
VDS=60V, VGS=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
VGS=20V, VDS=0V
- - 100 nA
Gate-Body Leakage, Reverse
I
GSSR
VGS=-20V, VDS=0V
- - -100 nA
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
300
mA
Pulsed
(Note 1)
I
DP
1200
Drain Power Dissipation
(Note 2)
P
D
300 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Package mounted on a glass epoxy PCB(100mm21mm)
E
B
LL
DIM
MILLIMETERS
_
A
B
C
A
G
2
H
1
PP
N
C
K
1. SOURCE
2. GATE
3. DRAIN
D
3
M
D
E
G
H
J
K
L
M
N
J
P
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
Marking
Type Name
Lot No.
WA
2N7002
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage
V
th
VDS=VGS, ID=250 A
1.1 1.8 2.3 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=500mA
- 1.2 1.8
VGS=5V, ID=50mA
- 1.5 2.1
Drain-Source ON Voltage
V
DS(ON)
VGS=10V, ID=500mA
- 0.6 0.9
V
VGS=5V, ID=50mA
- 0.075 0.105
On State Drain Current
I
D(ON)
VGS=10V, VDS= 2 V
DS(ON)
500 - - mA
Forward Transconductance
g
FS
VDS=10V, ID=500mA
200 580 - mS
Drain-Source Diode Forward Voltage
V
SD
VGS=0V, IS=200mA (Note1)
- 0.78 1.15 V
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1MHz
- 47.1 -
pFReverse Transfer Capacitance
C
rss
- 3.5 -
Output Capacitance
C
oss
- 8.8 -
Switching Time
Turn-On Time
t
on
VDD=30V, RL=155 , ID=190mA,
V
GS
=10V
- 8.8 nS
Turn-Off Time
t
off
- 14.8 -
(Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%
SWITCHING TIME TEST CIRCUIT
V
IN
V
GS
G
V
D
DD
R
S
L
DUT
V
OUT
t
OUTPUT, V
INPUT, V
d(on)
IN
OUT
10%
t
on
t
t
d(off)
r
90%
10%
50% 50%
PULSE WIDTH
t
off
10%
90%
t
f
90%
INVERTED
2N7002
Revision No : 4
j
1.5
COMMON SOURCE
Ta=25 C
1.2
D
0.9
0.6
0.3
DRAIN CURRENT I (A)
0
0
1
DRAIN-SOURCE VOLTAGE V (V)
(Ω)
5
DS
4
3
I - V
DDS
10V
6V
5V
4V
V =3V
GS
2345
DS
R - T
DS(ON) j
R - I
DS(ON) D
6
VGS=3V
5
4
(Ω)
3
DS(ON)
R
2
1
DRAIN SOURCE ON- RESISTANCER
0
0.1
0.2
0.3 0.4 0.5 0.6
DRAIN CURRENT I (A)
ID - V
0.9
COMMON SOURCE
=10V
V
GS
D
0.6
6V
10V
COMMON SOURCE
Ta=25 C
D
GS
4V
5V
2
V
GS
I
=50mA
D
=5V
1
VGS =10V
I
=500mA
0
-100 0 50 100-50 150
DRAIN SOURCE ON- RESISTANCE R
D
JUNCTION TEMPERATURE T ( C)
V - T
th j
1.4
COMMON SOURCE
V
DS=VGS
I
=250µA
D
1.2
1
0.8
NORMALIZED GATE
C
125
0.3
DRAIN CURRENT I (A)
-55
25
C
C
0.0
0
j
1 2345
GATE-SOURCE VOLTAGE V (V)
I - V
SSD
GS
1
S
0.1
VGS =10
VGS =0
0.6
-100 0 50 100-50 150
SOURCE THRESHOLD VOLTAGE Vth (V)
JUNCTION TEMPERATURE T ( C)
REVERSE DRAIN CURRENT I (A)
0.01
0.0
0.3 0.6 0.9 1.2 1.5
BODY DIODE FORWARD VOLTAGE V (V)
SD
2N7002
Revision No : 4
1000
COMMON SOURCE
V
=0
GS
f=1MHz
C
Ta=25
100
10
CAPACITANCE C (pF)
1
01015520
DRAIN-SOURCE VOLTAGE V (V)
10
Tj=150 , Ta=25 ,Single
C C
Pulse,Package mounted
on a a glass epoxy
1
D
PCB(100mm
2
1mm)
0.1
0.01
0.001
DRAIN CURRENT I (A)
C - V
SOA
PW =1ms
PW =10ms
DS
PW =100ms
DS
PW 10
DC
Ciss
Coss
Crss
V - Q
GS g
10
COMMON SOURCE
=30V
V
8
GS
ID= 0.3A
Ta =25
C
GS
6
4
2
GATE-SOURCE VOLTAGE V (V)
25
0
0
2
46810
GATE CHARGE Q (nC)
P - Ta
D
g
350
D
300
250
200
150
100
50
0.0001
0.001 0.01 10 10010.1
DRAIN-SOURCE VOLTAGE V (V)
DS
0
DRAIN POWER DISSIPATION P (mW)
02040
60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
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