KEC 2N7000A User Manual

2003. 12. 12 1/4

SEMICONDUCTOR

TECHNICAL DATA

2N7000A

N CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

Revision No : 1

INTERFACE AND SWITCHING APPLICATION.

FEATURES

High density cell design for low R

DS(ON)

.

Voltage controolled small signal switch.

Rugged and reliable.

High saturation current capablity.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Drain-Source Breakdown Voltage

BV

DSS

VGS=0V, ID=10 A

60 - - V

Zero Gate Voltage Drain Current

I

DSS

VDS=48V, VGS=0V

- - 1

A

Gate-Body Leakage, Forward

I

GSSF

VGS=15V, VDS=0V

- - 1

A

Gate-Body Leakage, Reverse

I

GSSR

VGS=-15V, VDS=0V

- - -1

A

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage

V

DSS

60 V

Drain-Gate Voltage (RGS1 )

V

DGR

60 V

Gate-Source Voltage

V

GSS

20

V

Drain Current

Continuous

I

D

200

mA

Pulsed

I

DP

500

Drain Power Dissipation

P

D

400 mW

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

EQUIVALENT CIRCUIT

查询2N2904E供应商

B

K

D

F

1 2

L

E

G

H

F

C

3

M

AJ

1. SOURCE

2. GATE

3. DRAIN

TO-92

C

DIM MILLIMETERS

N

A

B

C

D

E
F

G

H

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

J

14.00 0.50

0.55 MAX

2.30

0.45 MAXM

1.00N

_
+

G

D

S

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.

2003. 12. 12 2/4

2N7000A

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 1)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Gate Threshold Voltage

V

th

VDS=VGS, ID=1mA

0.8 2.1 3 V

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=500mA

- 1.2 5

VGS=4.5V, ID=75mA

- 1.8 5.3

Drain-Source ON Voltage

V

DS(ON)

VGS=10V, ID=500mA

- 0.6 2.5
V

VGS=4.5V, ID=75mA

- 0.14 0.4

On State Drain Current

I

D(ON)

VGS=4.5V, VDS=10V

75 600 - mA

Forward Transconductance

g

FS

VDS=10V, ID=200mA

100 320 - mS

DYNAMIC CHARACTERISTICS

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1MHz

- 20 50

pFReverse Transfer Capacitance

C

rss

- 4 5

Output Capacitance

C

oss

- 11 25

Switching Time

Turn-On Time

t

on

VDD=15V, RL=25 , ID=200mA,

V

GS

=10V, R

GEN

=25

- - 10

nS

Turn-Off Time

t

off

- - 10

Note 1) Pulse Test : Pulse Width 300 , Duty Cycle 2.0%

SWITCHING TIME TEST CIRCUIT

V

IN

V

GS

R

GEN

G

V

D

DD

R

S

L

DUT

V

OUT

t

OUTPUT, V

INPUT, V

d(on)

IN

OUT

10%

t

on

t

t

d(off)

r

90%

10%

50% 50%

PULSE WIDTH

t

off

10%

90%

t

f

90%

INVERTED

2003. 12. 12 3/4

2N7000A

Revision No : 1

2.0

COMMON SOURCE

Ta=25 C

1.5

D

1.0

0.5

DRAIN CURRENT I (A)

0

0

1

DRAIN-SOURCE VOLTAGE V (V)

2.0

COMMON SOURCE

1.75

V =10V

GS

I =500mA

D

1.5

I - V

DDS

9V

10V

8V

7V

6V

5V

4V

V =3V

GS

2345

DS

R - T

DS(ON) j

R - I

DS(ON) D

3.0

2.5

2.0

1.5

1.0

DS(ON)

R (Ω) (NORMALIZED)

DRAIN SOURCE ON- RESISTANCE

0.5
0

0.4

0.8 1.2 1.6 2.0

DRAIN CURRENT I (A)

R - I

DS(ON) D

3.0

COMMON SOURCE

V =10V

GS

2.5

2.0

6V5V4.5V4V

Ta=125 C

7V

COMMON SOURCE

Ta=25 C

D

8V

9V

V =10V

GS

1.25

1.0

0.75

DS(ON)

R (Ω) (NORMALIZED)

DRAIN SOURCE ON- RESISTANCE

0.5

-50

-25

0255075100125150

JUNCTION TEMPERATURE T ( C)

I - V

DGS

2.0

COMMON SOURCE

V =10V

1.6

D

GS

1.2

0.8

0.4

DRAIN CURRENT I (A)

Ta=-55 C

Ta=25 C

j

a=125 C

T

1.5

1.0

0.5

DS(ON)

R (Ω) (NORMALIZED)

DRAIN SOURCE ON- RESISTANCE

0

0

0.4

0.8 1.2 1.6 2.0

DRAIN CURRENT I (A)

V - T

th j

1.1

1.05

1.0

0.95

0.9

th

V (NORMALIZED)

0.85

Ta=25 C

Ta=-55 C

D

COMMON SOURCE

V =V

DS GS

I =1mA

D

0

0

2

GATE-SOURCE VOLTAGE V (V)

46810

GS

0.8

GATE-SOURCE THRESHOLD VOLTAGE

-50

-25

0255075100125150

JUNCTION TEMPERATURE T ( C)

j

2003. 12. 12 4/4

2N7000A

Revision No : 1

I - V

SSD

30

COMMON

10

S

SOURCE
V =0

GS

3

1

0.3

Ta=125 C

Ta=25 C

0.1

0.03

REVERSE DRAIN CURRENT I (A)

0.01

0.2

0.4 0.6 0.8 1.0 1.2 1.4

BODY DIODE FORWARD VOLTAGE V (V)

V - Q

GS g

10

COMMON SOURCE

V =25V

8

DS

I =115mA

D

GS

6

4

2

GATE-SOURCE VOLTAGE V (V)

0

0

0.4

0.8 1.2 1.6 2.0

GATE CHARGE Q (nC)

Ta=-55 C

g

SD

100

50

30

10

5

COMMON SOURCE

3

V =0

CAPACITANCE C (pF)

GS

f=1MHz
Ta=25 C

1

1105330

DRAIN-SOURCE VOLTAGE V (V)

2

1

0.5

D

0.3

DS(ON)

R LIMIT

0.1

0.05

0.03

DRAIN CURRENT I (A)

SINGLE PULSE
V =10V

0.01

0.005

GS

Ta=25 C

1 3 10 100305

DRAIN-SOURCE VOLTAGE V (V)

C - V

I - V

DS

DDS

100mS

1s

10

s

DC

10mS

DS

DS

100µs

1mS

C

iss

C

oss

C

rss

50

50

P - Ta

D

700

D

600

500

400

300

200

100

0

DRAIN POWER DISSIPATION P (mW)

02040

60 80 100 120 140 160

AMBIENT TEMPERATURE Ta ( C)