KEC 2N7000A User Manual
2003. 12. 12 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7000A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 1
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
VDS=48V, VGS=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
VGS=15V, VDS=0V
- - 1
A
Gate-Body Leakage, Reverse
I
GSSR
VGS=-15V, VDS=0V
- - -1
A
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage (RGS1 )
V
DGR
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
200
mA
Pulsed
I
DP
500
Drain Power Dissipation
P
D
400 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
查询2N2904E供应商
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. SOURCE
2. GATE
3. DRAIN
TO-92
C
DIM MILLIMETERS
N
A
B
C
D
E
F
G
H
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
J
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
_
+
G
D
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
2003. 12. 12 2/4
2N7000A
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 1)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage
V
th
VDS=VGS, ID=1mA
0.8 2.1 3 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=500mA
- 1.2 5
VGS=4.5V, ID=75mA
- 1.8 5.3
Drain-Source ON Voltage
V
DS(ON)
VGS=10V, ID=500mA
- 0.6 2.5
V
VGS=4.5V, ID=75mA
- 0.14 0.4
On State Drain Current
I
D(ON)
VGS=4.5V, VDS=10V
75 600 - mA
Forward Transconductance
g
FS
VDS=10V, ID=200mA
100 320 - mS
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1MHz
- 20 50
pFReverse Transfer Capacitance
C
rss
- 4 5
Output Capacitance
C
oss
- 11 25
Switching Time
Turn-On Time
t
on
VDD=15V, RL=25 , ID=200mA,
V
GS
=10V, R
GEN
=25
- - 10
nS
Turn-Off Time
t
off
- - 10
Note 1) Pulse Test : Pulse Width 300 , Duty Cycle 2.0%
SWITCHING TIME TEST CIRCUIT
V
IN
V
GS
R
GEN
G
V
D
DD
R
S
L
DUT
V
OUT
t
OUTPUT, V
INPUT, V
d(on)
IN
OUT
10%
t
on
t
t
d(off)
r
90%
10%
50% 50%
PULSE WIDTH
t
off
10%
90%
t
f
90%
INVERTED
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