JMnic 2SC2562 Product Specification
JMnic Product Specification
Silicon NPN Power Transistors 2SC2562
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1012
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 1 A
PT Total power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
25 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
JMnic Product Specification
Silicon NPN Power Transistors 2SC2562
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Base-emitter breakdown voltage IC=10mA , IB=0 50 V
(BR)CEO
V
Collector-emitter saturation voltage IC=3A; IB=0.15A 0.4 V
CEsat
V
Base-emitter saturation voltage IC=3A; IB=0.15A 1.2 V
BEsat
I
Collector cut-off current VCB=50V; IE=0 1 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 1 μA
EBO
h
DC current gain IC=1A ; VCE=1V 70 240
FE –1
h
DC current gain IC=3A ; VCE=1V 30
FE -2
fT Transition frequency IC=1A ; VCE=4V 120 MHz
Cob Output capacitance f=1MHz ; VCB=10V 80 pF
Switching times
ton Turn-on time 0.1 μs
ts Storage time 1.0 μs
tf Fall time
IC=3A ;IB1=- IB2=0.15A
=10Ω,VCC=30V
R
L
0.1 μs
h
Classifications
FE-1
O Y
70-140 120-240
2
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