JINOU BLE0305C2P User Manual

ChongQing JINOU Science & Technology BLE0305C2P Bluetooth Module Data Sheet

http://www.jinoux.com [phone] Page i of 18

目录

FCC ID: SI8-BLE0305C2P

Product: Bluetooth Low Energy Module（BLE）

Model(s): BLE0305C2P

Revision History .......................................................................................................................................... i

1. Features ......................................................................................................................................... 1

2. Product Description ................................................................................................................... 1

3. Block Diagram ............................................................................................................................... 1

4. Pin Descriptions ......................................................................................................................... 2

5. Electrical Specifications ....................................................................................................... 4

5.1. Absolute Maximum ratings ................................................................................................. 4

5.2. Recommended Operating Conditions ................................................................................. 4

5.3. Electrical Characteristics ............................................................................................. 4

6. Radio Characteristics ............................................................................................................... 6

6.1. General Radio Characteristics ....................................................................................... 6

6.2. Radio current consumption (Transmitter) ................................................................... 6

6.3. Radio current consumption (Receiver) ......................................................................... 6

6.4. Transmitter specification ............................................................................................... 7

6.5. Receiver operation ............................................................................................................. 7

6.6. selectivity ........................................................................................................................... 7

6.7. RX intermodulation ............................................................................................................. 8

6.8. Radio timing ......................................................................................................................... 8

6.9. Received Signal Strength Indicator (RSSI) specifications ................................. 8

6.10. Jitter ..................................................................................................................................... 9



6.11. Delay when disabling the RADIO ..................................................................................... 9

7. NFCT - Near field communication tag ................................................................................... 9

7.1. NFCT Timing Parameters ..................................................................................................... 9

7.2. NFCT Timing Parameters ..................................................................................................... 9

8. SAADC - Successive approximation analog-todigital converter ................................. 10

8.1. Reference ............................................................................................................................. 10

8.2. Acquisition time ............................................................................................................... 10

8.3. Limits event monitoring ................................................................................................. 10

8.4. SAADC Electrical Specification ................................................................................... 11

9. Physical Dimensions ................................................................................................................. 14

10. Solder Profiles ......................................................................................................................... 15

10.1. Solder Re-Flow Profile for Devices with Lead-Free Solder Balls .................... 15

Revision History

Revision Date Description/Changes

1.0 2018-05-30 First release
(Added / Changes / Merged / Deleted)

ChongQing JINOU Science & Technology BLE0305C2P Bluetooth Module Data Sheet

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1. Features

 Surface-mount, Size: 15.24mm×26.035mm = 600mil×1025mil

2. Product Description

For more information on Jinou’s wireless platform solutions for Bluetooth, see Jinou's

homepage(www.jinoux.com).

3. Block Diagram

ChongQing JINOU Science & Technology BLE0305C2P Bluetooth Module Data Sheet

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4. Pin Descriptions

Device Terminal Functions(设备接线端列表)

序号 说明

说明 序号
1 GND GND 38
2 P25 P24 37
3 P26 P23 36
4 P27 P22 35
5 P28 SWD 34
6 P29 SWC 33
7 P30 P21 32
8 P31 P20 31
9 P02 P19 30

10 P03 P18 29
11 P04 P17 28
12 P05 P16 27
13 VCC P15 26
14 GND P14 25

15 16 17 18 19 20 21 22 23 24

GND VCC P06 P07 P08 P09 P10 P11 P12 P13

Device Terminal Functions(设备接线端功能描述)
No. Name Type Description

P00
XL1

Digital I/O
Analog input

General purpose I/O

Connection for 32.768 kHz crystal (LFXO)
P01
XL2

Digital I/O
Analog input

General purpose I/O

Connection for 32.768 kHz crystal (LFXO)
P02
AIN0

Digital I/O
Analog input

General purpose I/O

SAADC/COMP/LPCOMP input
P03
AIN1

Digital I/O
Analog input

General purpose I/O

SAADC/COMP/LPCOMP input
P04
AIN2

Digital I/O
Analog input

General purpose I/O

SAADC/COMP/LPCOMP input
P05
AIN3

Digital I/O
Analog input

General purpose I/O

SAADC/COMP/LPCOMP input

P06 Digital I/O General purpose I/O
P07 Digital I/O General purpose I/O
P08 Digital I/O General purpose I/O
NFC1

P09

NFC input
Digital I/O

NFC antenna connection

General purpose I/O**1

NFC2

P10

NFC input
Digital I/O

NFC antenna connection

General purpose I/O**1

P11 Digital I/O General purpose I/O
P12 Digital I/O General purpose I/O
P13 Digital I/O General purpose I/O
P14

TRACEDATA[3]

Digital I/O General purpose I/O

Trace port output

P15

TRACEDATA[2]

Digital I/O General purpose I/O

Trace port output

P16

TRACEDATA[1]

Digital I/O General purpose I/O

Trace port output

P17 Digital I/O General purpose I/O
P18

TRACEDATA[0] / SWO

Digital I/O General purpose I/O

Trace port output / Single wire output

P19 Digital I/O General purpose I/O
P20 Digital I/O General purpose I/O

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TRACECLK Trace port clock output

P0.21

nRESET

Digital I/O General purpose I/O

Configurable as pin reset

P22 Digital I/O General purpose I/O
P23 Digital I/O General purpose I/O
P24 Digital I/O General purpose I/O
P25 Digital I/O General purpose I/O
P26 Digital I/O General purpose I/O
P27 Digital I/O General purpose I/O
P0.28

AIN4

Digital I/O
Analog input

General purpose I/O**2

SAADC/COMP/LPCOMP input

P0.29

AIN5

Digital I/O
Analog input

General purpose I/O**2

SAADC/COMP/LPCOMP input

P0.30

AIN6

Digital I/O
Analog input

General purpose I/O**2

SAADC/COMP/LPCOMP input

P0.31

AIN7

Digital I/O
Analog input

General purpose I/O**2

SAADC/COMP/LPCOMP input

SWDCLK OR SWC Digital input Serial wire debug clock input for debug and

programming

SWDIO OR SWD Digital I/O Serial wire debug I/O for debug and programming
VCC Power Ground
GND Power Power supply
**1 See GPIO located near the radio for more information.
**2 See NFC antenna pins for more information.

1 GPIO located near the radio

Radio performance parameters, such as sensitivity, may be affected by high frequency digital I/O with
large sink/source current close to the Radio power supply and antenna pins.
Table 5: GPIO recommended usage for module identify some GPIO that have recommended usage guidelines to
maximize radio performance in an application.

Table 5: GPIO recommended usage for module
Recommended usage Low drive, low frequency I/O only.
Included GPIO P22, P23, P24, P25, P26, P27, P28, P29, P30, P31.

2 NFC antenna pins

Two physical pins can be configured either as NFC antenna pins (factory default), or as GPIOs, as
shown below.
NFC pad name GPIO
NFC1 P09
NFC2 P10

When configured as NFC antenna pins, the GPIOs on those pins will automatically be set to DISABLE
state and a protection circuit will be enabled preventing the chip from being damaged in the presence
of a strong NFC field. The protection circuit will short the two pins together if voltage difference exceeds
approximately 2V.

For information on how to configure these pins as normal GPIOs, see NFCT — Near field communication
tag on page 416 and UICR — User information configuration registers on page 54. Note that the device
will not be protected against strong NFC field damage if the pins are configured as GPIO and an NFC antenna
is connected to the device. The pins will always be configured as NFC pins during power-on reset until
the configuration is set according to the UICR register.

These two pins will have some limitations when configured as GPIO. The pin capacitance will be higher
on these pins, and there is some current leakage between the two pins if they are driven to different
logical values. To avoid leakage between the pins when configured as GPIO, these GPIOs should always be
at the same logical value whenever entering one of the device power saving modes. See Electrical
specification.

ChongQing JINOU Science & Technology BLE0305C2P Bluetooth Module Data Sheet

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5. Electrical Specifications

5.1.

Absolute Maximum ratings

Maximum ratings are the extreme limits to which the chip can be exposed for a limited
amount of time without permanently damaging it. Exposure to absolute maximum ratings for
prolonged periods of time may affect the reliability of the device.

Min Max Unit
Supply voltages
VCC -0.3 +3.9 V
GND 0 V

I/O pin voltage
VI/O, VCC ≤3.6 V -0.3 VCC+0.3V V
VI/O, VCC >3.6 V -0.3 3.9 V

NFC antenna pin current
INFC1/2 80 mA

Radio
RF input level 10 dBm

Storage temperature -40 +125 ℃
MSL (moisture sensitivity level) 2
ESD HBM (human body model) 4000 V
ESD CDM (charged device model) 1000 V

Flash memory
Endurance (Write/Erase cycles) 10000
Retention (at 40℃) 10 years

5.2. Recommended Operating Conditions

Parameter Min Type Max Unit

Voltage at POWER pin(VCC) 2.7 3.3 3.6 V

Voltage at digital pins(P00 – P31) -0.3 - VCC+0.3V V

Abs(NFC1 – NFC2) 2 V

Operating temperature -40 25 85 ℃

5.3. Electrical Characteristics

GPIO Electrical Specification

Symbol Description Min Typ Max Units

VIH Input high voltage 0.7* VCC VCC V
VIL Input low voltage GND 0.3*VCC V

V

OH,HDH

Output high voltage, high drive, 5 mA, VCC >= 2.7 V VCC-0.4 VCC V

V

OL,HDH

Output low voltage, high drive, 5 mA, VCC >= 2.7 V GND GND+0.4 V

I

OL,HDH

Current at GND+0.4 V, output set low, high drive, VCC >= 2.7 V

6 10 15 mA

I

OH,HDH

Current at VCC-0.4 V, output set high, high drive, VCC >= 2.7 V

6 9 14 mA

t

RF,15pF

Rise/fall time, low drive mode, 10-90%, 15 pF load1 9 nS

t

RF,25pF

Rise/fall time, low drive mode, 10-90%, 25 pF load1 13 nS

t

RF,50pF

Rise/fall time, low drive mode, 10-90%, 50 pF load1 25 nS

t

HRF,15pF

Rise/Fall time, high drive mode, 10-90%, 15 pF load1 4 nS

t

HRF,25pF

Rise/Fall time, high drive mode, 10-90%, 25 pF load1 5 nS

t

HRF,50pF

Rise/Fall time, high drive mode, 10-90%, 50 pF load1 8 nS

RPU Pull-up resistance 11 13 16 KΩ

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RPD Pull-down resistance 11 13 16 KΩ

C

PAD

Pad capacitance 3 pF

C

PAD_NFC

Pad capacitance on NFC pads 4 pF

I

NFC_LEAK

Leakage current between NFC pads when driven to different states

2 10 uA

The current drawn from the battery when GPIO is active as an output is calculated as follows:
I

GPIO

=VCC C

load

f

C

load

being the load capacitance and “f” is the switching frequency.

GPIO drive strength vs Voltage, standard drive,

VCC = 3.0 V

GPIO drive strength vs Voltage, high drive,

VCC = 3.0 V

Max sink current vs Voltage, standard drive

Max sink current vs Voltage, high drive

Rise and fall time vs Temperature, 10%-90%, 25pF

load capacitance, VCC = 3.0 V

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6. Radio Characteristics

6.1. General Radio Characteristics

Symbol Description Min. Typ. Max. Units

fOP

Operating frequencies

2360 2500 MHz

f

PLL,PROG,RES

PLL programming resolution

2 KHz

f

PLL,CH,SP

PLL channel spacing

1 MHz

f

DELTA,1M

Frequency deviation @ 1 Msps

±170 KHz

f

DELTA,BLE,1M

Frequency deviation @ BLE 1Msps

±250 KHz

f

DELTA,2M

Frequency deviation @ 2 Msps

±320 KHz

f

DELTA,BLE,2M

Frequency deviation @ BLE 2 Msps

±500 KHz

fsk

SPS

On-the-air data rate

1 2 Msps

6.2. Radio current consumption (Transmitter)

Symbol Description Min. Typ. Max. Units

I

TX,PLUS4dBM

TX only run current PRF = +4 dBm 16.6 mA

I

TX,0dBM

TX only run current PRF = 0dBm 11.6 mA

I

TX,MINUS4dBM

TX only run current PRF = -4 dBm 9.3 mA

I

TX,MINUS8dBM

TX only run current PRF = -8 dBm 8.4 mA

I

TX,MINUS12dBM

TX only run current PRF = -12 dBm 7.7 mA

I

TX,MINUS16dBM

TX only run current PRF = -16 dBm 7.3 mA

I

TX,MINUS20dBM

TX only run current PRF = -20 dBm 7.0 mA

I

TX,MINUS40dBM

TX only run current PRF = -40 dBm 5.9 mA

I

START,TX

TX start-up current, PRF = 4 dBm 8.8 mA

Symbol Description Min. Typ. Max. Units

I

TX,PLUS4dBM,DCDC

TX only run current (DCDC, 3V) PRF =+4 dBm 7.5 mA

I

TX,0dBM,DCDC

TX only run current (DCDC, 3V)PRF = 0dBm 5.3 mA

I

TX,MINUS4dBM,DCDC

TX only run current DCDC, 3V PRF = -4dBm 4.2 mA

I

TX,MINUS8dBM,DCDC

TX only run current DCDC, 3V PRF = -8 dBm 3.8 mA

I

TX,MINUS12dBM,DCDC

TX only run current DCDC, 3V PRF = -12 dBm 3.5 mA

I

TX,MINUS16dBM,DCDC

TX only run current DCDC, 3V PRF = -16 dBm 3.3 mA

I

TX,MINUS20dBM,DCDC

TX only run current DCDC, 3V PRF = -20 dBm 3.2 mA

I

TX,MINUS40dBM,DCDC

TX only run current DCDC, 3V PRF = -40 dBm 2.7 mA

I

START,TX,DCDC

TX start-up current DCDC, 3V, PRF = 4 dBm 4.0 mA

6.3. Radio current consumption (Receiver)

Symbol Description Min. Typ. Max. Units

I

RX,1M

RX only run current 1Msps / 1Msps BLE 11.7 mA

I

RX,2M

RX only run current 2Msps / 2Msps BLE 12.9 mA

I

START,RX,LDO

RX start-up current (LDO 3V) 7.5 mA

Symbol Description Min. Typ. Max. Units

I

RX,1M,DCDC

RX only run current (DCDC, 3V) 1Msps / 1Msps BLE 5.4 mA

I

RX,2M,DCDC

RX only run current (DCDC, 3V) 2Msps / 2Msps BLE 5.8 mA

I

START,RX,DCDC

RX start-up current (DCDC 3V) 3.5 mA

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6.4. Transmitter specification

Symbol Description Min. Typ. Max. Units
PRF Maximum output power 4 6 dBm
P

RFC

RF power control range 24 dB

P

RFCR

RF power accuracy ±4 dB

P

RF1,1

1st Adjacent Channel Transmit Power 1 MHz (1 Msps Nordic proprietary mode)

-25 dBc

P

RF2,1

2nd Adjacent Channel Transmit Power 2 MHz (1 Msps Nordic proprietary mode)

-50 dBc

P

RF1,2

1st Adjacent Channel Transmit Power 2 MHz (2 Msps Nordic proprietary mode)

-25 dBc

P

RF2,2

2nd Adjacent Channel Transmit Power 4 MHz (2 Msps Nordic proprietary mode)

-50 dBc

P

RF1,2,BLE

1st Adjacent Channel Transmit Power 2 MHz (2 Msps BLE mode)

-20 dBc

P

RF2,2,BLE

2nd Adjacent Channel Transmit Power 4 MHz (2 Msps BLE mode)

-50 dBc

6.5. Receiver operation

Symbol Description Min. Typ. Max. Units
P

RX,MAX

Maximum received signal strength at < 0.1% BER 0 dBm

P

SENS,IT,1M

Sensitivity, 1Msps nRF mode 16 -93 dBm

P

SENS,IT,SP,1M,BLE

Sensitivity, 1Msps BLE ideal transmitter, <=37 bytes BER=1E-3

17

-96 dBm

P

SENS,IT,LP,1M,BLE

Sensitivity, 1Msps BLE ideal transmitter >=128 bytes BER=1E-4

18

-95 dBm

P

SENS,IT,2M

Sensitivity, 2Msps nRF mode 19 -89 dBm

P

SENS,IT,SP,2M,BLE

Sensitivity, 2Msps BLE ideal transmitter, Packet length <=37bytes

-93 dBm

P

SENS,DT,SP,2M,BLE

Sensitivity, 2Msps BLE dirty transmitter, Packet length <=37bytes

-93 dBm

P

SENS,IT,LP,2M,BLE

Sensitivity, 2Msps BLE ideal transmitter >= 128bytes -92 dBm

P

SENS,DT,LP,2M,BLE

Sensitivity, 2Msps BLE dirty transmitter, Packet length >= 128bytes

-92 dBm

**16 Typical sensitivity applies when ADDR0 is used for receiver address correlation. When ADDR[1...7]

are used for receiver address correlation, the typical sensitivity for this mode is degraded by 3dB.

**17 As defined in the Bluetooth Core Specification v4.0 Volume 6: Core System Package (Low Energy

Controller Volume)
**18 Equivalent BER limit < 10E-04
**19 Typical sensitivity applies when ADDR0 is used for receiver address correlation. When ADDR[1...7]

are used for receiver address correlation, the typical sensitivity for this mode is degraded by 3dB.

6.6. selectivity

RX selectivity with equal modulation on interfering signal20
**20 Wanted signal level at PIN = -67 dBm. One interferer is used, having equal modulation
as the wanted signal. The input power of the interferer where the sensitivity equals BER
= 0.1% is presented

Symbol Description Min. Typ. Max. Units

C/I

1M,co-channel

1Msps mode, Co-Channel interference 9 dB

C/I

1M,-1MHz

1 Msps mode, Adjacent (-1 MHz) interference -2 dB

C/I

1M,+1MHz

1 Msps mode, Adjacent (+1 MHz) interference -10 dB

C/I

1M,-2MHz

1 Msps mode, Adjacent (-2 MHz) interference -19 dB

C/I

1M,+2MHz

1 Msps mode, Adjacent (+2 MHz) interference -42 dB

C/I

1M,-3MHz

1 Msps mode, Adjacent (-3 MHz) interference -38 dB

C/I

1M,+3MHz

1 Msps mode, Adjacent (+3 MHz) interference -48 dB

C/I

1M,±6MHz

1 Msps mode, Adjacent (≥6 MHz) interference -50 dB

C/I

1MBLE,co-channel

1 Msps BLE mode, Co-Channel interference 6 dB

C/I

1MBLE,-1MHz

1 Msps BLE mode, Adjacent (-1 MHz) interference -2 dB

C/I

1MBLE,+1MHz

1 Msps BLE mode, Adjacent (+1 MHz) interference -9 dB

C/I

1MBLE,-2MHz

1 Msps BLE mode, Adjacent (-2 MHz) interference -22 dB

C/I

1MBLE,+2MHz

1 Msps BLE mode, Adjacent (+2 MHz) interference -46 dB

C/I

1MBLE,>3MHz

1 Msps BLE mode, Adjacent (≥3 MHz) interference -50 dB

C/I

1MBLE,image

Image frequency Interference -22 dB

C/I

1MBLE,image,1MHz

Adjacent (1 MHz) interference to in-band image frequency

-35 dB

C/I

2M,co-channel

2Msps mode, Co-Channel interference 10 dB

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C/I

2M,-2MHz

2 Msps mode, Adjacent (-2 MHz) interference 6 dB

C/I

2M,+2MHz

2 Msps mode, Adjacent (+2 MHz) interference -14 dB

C/I

2M,-4MHz

2 Msps mode, Adjacent (-4 MHz) interference -20 dB

C/I

2M,+4MHz

2 Msps mode, Adjacent (+4 MHz) interference -44 dB

C/I

2M,-6MHz

2 Msps mode, Adjacent (-6 MHz) interference -42 dB

C/I

2M,+6MHz

2 Msps mode, Adjacent (+6 MHz) interference -47 dB

C/I

2M,≥12MHz

2 Msps mode, Adjacent (≥12 MHz) interference -52 dB

C/I

2MBLE,co-channel

2 Msps BLE mode, Co-Channel interference 7 dB

C/I

2MBLE,±2MHz

2 Msps BLE mode, Adjacent (±2 MHz) interference 0 dB

C/I

2MBLE,±4MHz

2 Msps BLE mode, Adjacent (±4 MHz) interference -47 dB

C/I

2MBLE,≥6MHz

2 Msps BLE mode, Adjacent (≥6 MHz) interference -49 dB

C/I

2MBLE,image

Image frequency Interference -21 dB

C/I

2MBLE,image, 2MHz

Adjacent (2 MHz) interference to in-band image frequency

-36 dB

6.7. RX intermodulation

RX intermodulation21
**21 Wanted signal level at PIN = -64 dBm. Two interferers with equal input power are used.
The interferer closest in frequency is not modulated, the other interferer is modulated
equal with the wanted signal. The input power of the interferers where the sensitivity
equals BER = 0.1% is presented.

Symbol Description Min. Typ. Max. Units

P

IMD,1M

IMD performance, 1 Msps (3 MHz, 4 MHz, and 5 MHz offset)

-33 dBm

P

IMD,1M,BLE

IMD performance, BLE 1 Msps (3 MHz, 4 MHz, and 5 MHz offset)

-30 dBm

P

IMD,2M

IMD performance, 2 Msps (6 MHz, 8 MHz, and 10 MHz offset)

-33 dBm

P

IMD,2M,BLE

IMD performance, BLE 2 Msps (6 MHz, 8 MHz, and 10 MHz offset)

-32 dBm

6.8. Radio timing

Symbol Description Min. Typ. Max. Units

t

TXEN

Time between TXEN task and READY event after channel

FREQUENCY configured

140 uS

t

TXEN,FAST

Time between TXEN task and READY event after channel

FREQUENCY configured (Fast Mode)

40 uS

t

TXDISABLE

Time between DISABLE task and DISABLED event when the

radio was in TX and mode is set to 1Msps

6 uS

t

TXDISABLE,2M

Time between DISABLE task and DISABLED event when the

radio was in TX and mode is set to 2Msps

4 uS

t

RXEN

Time between the RXEN task and READY event after

channel FREQUENCY configured in default mode

140 uS

t

RXEN,FAST

Time between the RXEN task and READY event after

channel FREQUENCY configured in fast mode

40 uS

t

SWITCH

The minimum time taken to switch from RX to TX or TX

to RX (channel FREQUENCY unchanged)

20 uS

t

RXDISABLE

Time between DISABLE task and DISABLED event when the

radio was in RX

0 uS

t

TXCHAIN

TX chain delay 0.6 uS

t

RXCHAIN

RX chain delay 9.4 uS

t

RXCHAIN,2M

RX chain delay in 2Msps mode 5 uS

6.9. Received Signal Strength Indicator (RSSI) specifications

Symbol Description Min. Typ. Max. Units

RSSI

ACC

RSSI Accuracy Valid range -90 to -20 dBm ±2 dB

RSSI

RESOLUTION

RSSI resolution 1 dB

RSSI

PERIOD

Sample period 0.25 uS

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6.10. Jitter

Symbol Description Min. Typ. Max. Units

t

DISABLEDJITTER

Jitter on DISABLED event relative to END event when
shortcut between END and DISABLE is enabled.

0.25 uS

t

READYJITTER

Jitter on READY event relative to TXEN and RXEN task. 0.25 uS

6.11. Delay when disabling the RADIO

Symbol Description Min. Typ. Max. Units

t

TXDISABLE,1M

Disable delay from TX.
Delay between DISABLE and DISABLED for MODE = Nrf_1Mbit
and MODE = Ble_1Mbit

6 uS

t

RXDISABLE,1M

Disable delay from RX.
Delay between DISABLE and DISABLED for MODE = Nrf_1Mbit
and MODE = Ble_1Mbit

0 uS

7. NFCT - Near field communication tag

7.1. NFCT Timing Parameters

Symbol Description Min. Typ. Max. Units
fc Frequency of operation 13.56 MHz
CMI Carrier modulation index 95 %
DR Data Rate 106 Kbps
fs Modulation sub-carrier frequency fc/16 MHz
V

swing

Peak differential Input voltage swing on NFC1 and NFC2

VCC Vp

V

sense

Peak differential Field detect threshold level on NFC1-NFC235

1.0 Vp

I

sense

Current in SENSE STATE 100 nA

I

activated

Current in ACTIVATED STATE 480 uA

R

in_min

Minimum input resistance when regulating voltage swing

40 Ω

R

in_max

Maximum input resistance when regulating voltage swing

1.0 kΩ

R

in_loadmod

Input resistance when load modulating 8 22 Ω

I

max

Maximum input current on NFC pins 80 mA

7.2. NFCT Timing Parameters

Symbol Description Min. Typ. Max. Units
t

activate

Time from task_ACTIVATE in SENSE or DISABLE state to

ACTIVATE_A or IDLE state

36

500 uS

t

sense

Time from remote field is present in SENSE mode to

FIELDDETECTED event is asserted

20 uS

NFCT timing parameters (Shortcuts for FIELDDETECTED and FIELDLOST are disabled)
**35 Input is high impedance in sense mode
**36 Does not account for voltage supply and oscillator startup times

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8. SAADC - Successive approximation analog-todigital converter

8.1. Reference

The ADC can use two different references, controlled in the REFSEL field of the

CH[n].CONFIG register. These are:

• Internal reference

• VCC as reference

The internal reference results in an input range of ±0.6 V on the ADC core. VCC as
reference results in an input range of ±VCC/4 on the ADC core. The gain block can be used
to change the effective input range of the ADC.

Input range = (+/- 0.6 V or +/-VDD/4)/Gain

For example, choosing VCC as reference, single ended input (grounded negative input),
and a gain of 1/4 the input range will be:

Input range = (VCC/4)/(1/4) = VCC

With internal reference, single ended input (grounded negative input), and a gain of
1/6 the input range will be:

Input range = (0.6 V)/(1/6) = 3.6 V

The AIN0-AIN7 inputs cannot exceed VCC, or be lower than GND.

8.2. Acquisition time

To sample the input voltage, the ADC connects a capacitor to the input.

For illustration, see Figure 103: Simplified ADC sample network on page. The
acquisition time indicates how long the capacitor is connected, see TACQ field in
CH[n].CONFIG register. The required acquisition time depends on the source (Rsource)
resistance. For high source resistance the acquisition time should be increased, see Table
89: Acquisition time on page.

Figure 103: Simplified ADC sample network
Table 89: Acquisition time
TACQ [μs] Maximum source resistance [kOhm]
3 10
5 40
10 100
15 200
20 400
40 800

8.3. Limits event monitoring

A channel can be event monitored by configuring limit register CH[n].LIMIT.
If the conversion result is higher than the defined high limit, or lower than the defined

low limit, the appropriate event will get fired.

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Figure 104: Example of limits monitoring on channel 'n'

Note that when setting the limits, CH[n].LIMIT.HIGH shall always be higher than or equal to
CH[n].LIMIT.LOW . In other words, an event can be fired only when the input signal has been sampled outside
of the defined limits. It is not possible to fire an event when the input signal is inside a defined range
by swapping high and low limits.

The comparison to limits always takes place, there is no need to enable it. If comparison is not required
on a channel, the software shall simply ignore the related events. In that situation, the value of the
limits registers is irrelevant, so it does not matter if CH[n].LIMIT.LOW is lower than CH[n].LIMIT.HIGH
or not.

8.4. SAADC Electrical Specification

Symbol Description Min. Typ. Max. Units
DNL Differential non-linearity, 10-bit resolution -0.95 <1 LSB
INL Integral non-linearity, 10-bit resolution 1 LSB
VOS

Differential offset error (calibrated), 10-bit resolution

a

±2 LSB
CEG Gain error temperature coefficient 0.02 % / ℃
f

SAMPLE

Maximum sampling rate 200 kHz

t

ACQ,10k

Acquisition time (configurable), source Resistance <= 10kOhm

3 uS
t

ACQ,40k

Acquisition time (configurable), source Resistance <= 40kOhm

5 uS
t

ACQ,100k

Acquisition time (configurable), source Resistance <= 100kOhm

10 uS
t

ACQ,200k

Acquisition time (configurable), source Resistance <= 200kOhm

15 uS
t

ACQ,400k

Acquisition time (configurable), source Resistance <= 400kOhm

20 uS
t

ACQ,800k

Acquisition time (configurable), source Resistance <= 800kOhm

40 uS
t

CONV

Conversion time <2 uS

I

ADC,CONV

ADC current during ACQuisition and CONVersion 700 uA

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I

ADC,IDLE

Idle current, when not sampling, excluding clock
sources and regulator base currents33

<5 uA

E

G1/6

Errorb for Gain = 1/6 -3 3 %

E

G1/4

Errorb for Gain = 1/4 -3 3 %

E

G1/2

Errorb for Gain = 1/2 -3 4 %
EG1 Errorb for Gain = 1 -3 4 %
C

SAMPLE

Sample and hold capacitance at maximum gain34 2.5 pF

R

INPUT

Input resistance >1 MΩ

E

NOB

Effective number of bits, differential mode, 12-bit
resolution, 1/1 gain, 3 μs acquisition time, crystal
HFCLK, 200 ksps

9 Bit

S

NDR

Peak signal to noise and distortion ratio,
differential mode, 12-bit resolution, 1/1 gain, 3 μs
acquisition time, crystal HFCLK, 200ksps

56 dB

S

FDR

Spurious free dynamic range, differential mode,
12-bit resolution, 1/1 gain, 3 μs acquisition time,
crystal HFCLK, 200 ksps

70 dBc

R

LADDER

Ladder resistance 160 kΩ

Figure 105: Model of SAADC input (one channel)

Note: SAADC average current calculation for a given application is based on the sample period,

conversion and acquisition time ( t

conv

and t

ACQ

) and conversion and idle current (I

ADC,CONV

and I

ADC,IDLE

). For
example, sampling at 4kHz gives a sample period of 250μs. The average current consumption would then
be:

Figure 106: ADC INL vs Output Code

**a Digital output code at zero volt differential input.
**33 When tACQ is 10us or longer, and if DC/DC is active, it will be allowed to work in refresh mode if

no other resource is requiring a high quality power supply from 1V3. If tACQ is smaller than 10us and
DC/DC is active,

refresh mode will not be allowed, and it will remain in normal mode from the START

task to the STOPPED event. So depending on tACQ and other resources' needs, the appropriate base current

needs to be taken into account.
**b Does not include temperature drift
**34 Maximum gain corresponds to highest capacitance.

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Figure 107: ADC DNL vs Output Code

Figure 108: FFT of a 2.8 kHz sine at 200 ksps ()

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9. Physical Dimensions

A A1 A2 A3 A4 B B1 B2 B3 C Unit

1025 50 50 325 310 600 75 50 75 80 mil

26.035 1.27 1.27 8.255 7.874 15.24 1.905 1.27 1.905 2.286 mm

×38

C1 D1 E1 Unit
32 42 32 mil

0.8128 1.0668 0.8128 mm

×38

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10. Solder Profiles

The soldering profile depends on various parameters necessitating a set up for each
application. The data here is given only for guidance on solder re-flow. There are four
zones:

1.Preheat Zone - This zone raises the temperature at a controlled rate, typically

1-2.5°C/s.

2.Equilibrium Zone - This zone brings the board to a uniform temperature and also

activates the flux.

The duration in this zone (typically 2-3 minutes) will need to be adjusted to optimise
the out gassing of the flux.

3.Reflow Zone - The peak temperature should be high enough to achieve good wetting
but not so high as to cause component discoloration or damage. Excessive soldering time
can lead to intermetallic growth which can result in a brittle joint.

4.Cooling Zone - The cooling rate should be fast, to keep the solder grains small which
will give a longer lasting joint. Typical rates will be 2-5°C/s.

10.1. Solder Re-Flow Profile for Devices with Lead-Free Solder Balls

Composition of the solder ball: Sn 95.5%, Ag 4.0%, Cu 0.5%

Typical Lead-Free Re-flow Solder Profile

Key features of the profile:

 Initial Ramp = 1-2.5°C/sec to 175°C±25°C equilibrium
 Equilibrium time = 60 to 180 seconds
 Ramp to Maximum temperature (250°C) = 3°C/sec max.
 Time above liquidus temperature (217°C): 45-90 seconds
 Device absolute maximum reflow temperature: 260°C

Devices will withstand the specified profile. Lead-free devices will withstand up to three
reflows to a maximum temperature of 260°C.

Notes：They need to be baked prior to mounting。

China ChongQing JINOU Science & Technology Co.,LTD

Tel: [phone]

Email: [e-mail]

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M

odular Approval:
The BLE0305C2P module is designed to comply with the FCC statement. FCC ID
is SI8-BLE0305C2P. The host system using BLE0305C2P, should have label indicated it
contain modular’s FCC ID SI8-BLE0305C2P.

RF warning for Mobile device:

This equipment complies with FCC radiation exposure limits set forth for an
uncontrolled environment. This equipment should be installed and operated with minimum
distance 20cm between the radiator & your body.

15.19 Labelling requirements.

This device complies with part 15 of the FCC Rules. Operation is subject to the following
two conditions: (1) This device may not cause harmful interference, and (2) this device
must accept any interference received, including interference that may cause undesired
operation.

15.21 Information to user.

Note: This equipment has been tested and found to comply with the limits for a
Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed
to provide reasonable protection against harmful interference in a residential
installation. This equipment generates uses and can radiate radio frequency energy
and, if not installed and used in accordance with the instructions, may cause harmful
interference to radio communications. However, there is no guarantee that interference
will not occur in a particular installation. If this equipment does cause harmful
interference to radio or television reception, which can be determined by Chongqing
JINOU Science and Technology Development Co., Ltd.

turning the equipment off and on, the user is encouraged to try to correct the
interference by one or more of the following measures:

-Reorient or relocate the receiving antenna

-Increase the separation between the equipment and receiver.

-Connect the equipment into an outlet on a circuit different from that to which the
receiver is connected.

-Consult the dealer or an experienced radio/TV technician for help.

the OEM integrator is still responsible for testing their end-product for any
additional compliance requirements required with this module installed
IMPORTANT NOTE: In the event that these conditions cannot be met (for example certain
laptop configurations or co-location with another transmitter), then the FCC
authorization is no longer considered valid and the FCC ID can not be used on the final
product. In these circumstances, the OEM integrator will be responsible for
re-evaluating the end product (including the transmitter) and obtaining a separate
FCC authorization.

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Manual Information To the End User
The OEM integrator has to be aware not to provide information to the end user regarding
how to install or remove this RF module in the user’s manual of the end product which
integrates this module.