Jestek WPM3401 Schematic [ru]
WPM3401
WPM3401
P-Channel Enhancement Mode MOSFET
http://www.jestek.com.cn
Description
The WPM3401 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for low
voltage application, notebook computer power management and
other battery powered circuits where high-side switching.
Features
z -30V/-4.3A,RDS(ON) 65m@VGS=- 10V
z -30V/-3.4A,RDS(ON) 90m@VGS=-4.5V
z Super high density cell design for extremely low RDS (ON)
z Exceptional on-resistance and maximum DC current
capability
z SOT23
package design
<
<
Application
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
P−Channel MOSFET
G
1
S
2
Top View
Drain
3
WP1U
G
1
Gate Source
= Date Code
U
= Specific Device Code
WP1
D
3
2
Order information
Part Number
WPM3401-3/TR SOT23 3000 Tape&Reel
http://www.jestek.com.cn Page 1
Package
Shipping
Parameter
WPM3401
Absolute Maximum Ratings
Parameter
VDS Drain-Source voltage -30 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain
IDM Pulse Drain Current -20 A
PD Power Dissipation TA=25ć 2.8 W
TJ Operating Junction Temperature Range -55~150 ć
Tstg Storage Temperature Range
șJA
R
Electrical Characteristics
(TA=25 Unlesк s otherwise noted)
Static
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain Current IDSS
On-State Drain Current I
Drain-Source On-Resistance R
Current
Thermal Resistance-Junction to Ambient 70
Parameter Symbol Conditions Min. Typ Max. Unit
(TA=25 unless otherwise specified)
Symbol
Steady-State TA=25ć -4.3 A
Steady-State TA=70ć -3.4
TA=70ć 1.8
к!
lParameter
(BR)DSSVGS
GS(th)VDS=VGS,ID
VDS=0V,VGS=±20V ±100 nA
GSS
VDS=-30V,VGS=0V -1
V
T
VDS= -5V,VGS =-4.5V -10 A
D(on)
DS(on)
VGS=-10V,ID=-7.2A 0.055 0.065
VGS=-4.5V,ID=-5.0A 0.076 0.090
Value
Unit
ć/W
=0V,ID=-250uA -30
=-250uA
=-30V,VGS=0V
DS
J=85к
-0.8
-1.37
-5
-2.5
V
uA
ȍ
Forward Transconductance gfs VDS=-15V,ID=-5.7A 13 S
Diode Forward Voltage V
SD
IS=-1.3A,VGS =0V -0.72 -1.0 V
Dynamic
Total Gate Charge Q
Gate-Source Charge Qgs 3.1
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Time
Turn-Off Time
http://www.jestek.com.cn Page 2
14 18
g
V
=-15V,VGS=-10V
DS
= -3.5A
D
I
gd
700
iss
VDS=-15V,VGS=0V
120
oss
f=1MHz
rss
t
8 18
d(on)
VDD=-15V,RL=15ȍ
r
t
5 18
I
Ł-1.0A,V
d(off)
t
t
D
28 50
=6ȍ
G
R
f
GEN
=-10V
3
75
13 35
nC
pF
nS
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