JCST PXT8550 Schematic [ru]
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-89 Plastic-Encapsulate Transistors
PXT8550 TRANSISTOR (PNP)
FEATURES
Compliment to PXT8050
MARKING: Y2
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -40 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -1.5 A
Collector Power Dissipation 0.5 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
V
V
V
I
I
I
IC= -100μA, IE=0 -40 V
(BR)CBO
IC= -0.1mA, IB=0 -25 V
(BR)CEO
IE= -100μA, IC=0 -5 V
(BR)EBO
VCB= -40 V,IE=0 -0.1 μA
CBO
VCE= -20V, IB=0 -0.1 μA
CEO
VEB= -5V, IC=0 -0.1 μA
EBO
h
VCE= -1V, IC= -100mA 85 400
FE(1)
h
VCE= -1V, IC= -800mA 40
FE(2)
IC=-800mA, IB= -80mA -0.5 V
V
CE(sat)
IC=-800mA, IB= -80mA -1.2 V
V
BE(sat)
Ic=-1V,VCE=-10mA -1 V
V
BE(on)
IB=-1A -1.55 V
V
BEF
V
= -10V, IC= -50mA
f
T
VCB=-10V,IE=0,f=1MHz 20 pF
C
ob
CE
100 MHz
CLASSIFICATION OF h
Rank
Range
FE(1)
B C D D3
85-160 120-200 160-300 300-400
Typical characteristics PXT8550
Loading...