JCST PXT8050 Schematic [ru]
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
B,Nov,2012
PXT8050 TRANSISTOR (NPN)
FEATURES
z Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (Ta
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
1. BASE
2. COLLECTOR
=25℃ unless otherwise noted)
3. EMITTER
Symbol Parameter Value Unit
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5
Collector Current -Continuous 1.5 A
Collector Power dissipation 0.5 W
Junction Temperature 150
Storage Temperature -55~150
40 V
25 V
V
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
CLASSIFICATION OF h
Rank
FE(1)
B C D D3
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
BEF
VCE=10V,IC=50mA,f=30MHz 100 MHz
f
T
C
ob
=100uA, IE=0 40 V
=0.1mA, IB=0 25 V
=100μA, IC=0 5 V
VCB=40V, IE=0 0.1 μA
VCE=20V, IE=0 0.1 μA
VEB=5V, IC=0 0.1 μA
VCE=1V, IC=100mA 85 400
VCE=1V, IC=800mA 40
IC=800mA, IB=80mA 0.5 V
IC=800mA, IB=80mA 1.2 V
VCE=1V, IC=10mA 1 V
IB=1A 1.55 V
VCB=10V,IE=0,f=1MHz 15 pF
Range
85-160 120-200 160-300 300-400
Typical Characteristics
B,Nov,2012
PXT8050
0.30
0.25
(A)
C
0.20
0.15
0.10
COLLECTOR CURRENT I
0.05
Static Characteristic
COMMON
1mA
0.9mA
EMITTER
=25℃
T
a
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
IB=0.1mA
0.00
01234567
1000
100
(mV)
CEsat
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
CEsat
Ta=100 ℃
——
I
C
Ta=25℃
1000
FE
300
hFE ——
Ta=100℃
I
C
Ta=25℃
100
DC CURRENT GAIN h
COMMON EMITTER
= 1V
V
10
1 10 100 1000
CE
1500
COLLECTOR CURRENT IC (mA)
——
I
C
1200
1000
800
V
BEsat
Ta=25℃
(mV)
BEsat
600
Ta=100 ℃
10
VOLTAGE V
COLLECTOR-EMITTER SATURATION
1
1 10 100 1000
1500
1000
(mA)
C
100
10
COLLECTOR CURREMT IC (mA)
IC ——
V
BE
℃
0
0
=1
a
T
℃
5
=2
a
T
COLLECTOR CURRENT I
COMMON EMITTER
= 1V
V
1
0 300 600 900 1200
1000
BESE-EMMITER VOLTAGE VBE (mV)
fT ——
CE
I
C
VOLTAGE V
BASE-EMITTER SATURATION
400
β=10
1500 1500
1 10 100 1000
100
10
COLLECTOR CURREMT IC (mA)
Cob/Cib ——
C
VCB/V
EB
ib
C
ob
CAPACITANCE C (pF)
1
0.1 1 10
0.6
REVERSE VOLTAGE V (V)
PC —— T
a
β=10
f=1MHz
=0/IC=0
I
E
T
=25 ℃
a
20
(MHz)
TRANSITION FREQUENCY f
0.5
T
100
10
COMMON EMITTER
=10V
V
CE
T
=25℃
1
2
10 100
COLLECTOR CURRENT IC (mA)
a
0.4
0.3
(W)
C
P
0.2
COLLECTOR POWER DISSIPATION
0.1
0.0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( )℃
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