JCST MMBTA44 Schematic [ru]
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA44 TRANSISTOR (NPN)
SOT–23
FEATURES
High Collector-Emitter Voltage
Complement to MMBTA94
MARKING: 3D
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V
Collector-Base Voltage 500
CBO
V
Collector-Emitter Voltage 400
CEO
V
Emitter-Base Voltage 6
EBO
Collector Current 100 mA
Collector Power Dissipation 350 mW
Thermal Resistance From Junction To Ambient
Junction Temperature 150
Storage Temperature
R
PC
T
IC
ΘJA
Tj
stg
Parameter Value Unit
-55～+150 ℃
V
V
V
357 ℃/W
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
V
V
V
V
V
V
V
IC=100µA, IE=0 500 V
(BR)CBO
* IC=1mA, IB=0 400 V
(BR)CEO
IE=10µA, IC=0 6 V
(BR)EBO
I
VCB=400V, IE=0 0.1 µA
CBO
I
VEB=4V, IC=0 0.1 µA
EBO
h
* VCE=10V, IC=1mA 40
FE(1)
h
* VCE=10V, IC=10mA 50 200
FE(2)
h
* VCE=10V, IC=50mA 45
FE(3)
h
* VCE=10V, IC=100mA 40
FE(4)
* IC=1mA, IB=0.1mA 0.4 V
CE(sat)1
* IC=10mA, IB=1mA 0.5 V Collector-emitter saturation voltage
CE(sat)2
* IC=50mA, IB=5mA 0.75 V
CE(sat)3
* IC=10mA, IB=1mA 0.75 V
BE(sat)
Cob VCB=20V, IE=0, f=1MHz 7 pF
Cib VEB=0.5V, IC=0, f=1MHz 130 pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Oct,2010
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