JCST 2SA1013 Schematic [ru]
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA1013 TRANSISTOR (PNP)
SOT-89-3L
FEATURE
y High voltage
y Large continuous collector current capability
MARKING: 1013
BASE
1.
COLLECTOR
2.
EMITTER
3.
1
2
2
3
℃
MAXIMUM RATINGS (Ta
Symbol Parameter Value Unit
V
CBO
V
Collector-Emitter Voltage
CEO
V
EBO
IC
PC
Tj
T
stg
R
θJA
Collector-Base Voltage
Emitter-Base Voltage -6 V
Collector Current -Continuous -1 A
Collector Power Dissipation 0.5 W
Junction Temperature 150
Storage Temperature -55~+150
Thermal Resistance from Junction to Ambient
=25 unless otherwise noted )
-160 V
-160 V
℃
250
℃
℃
/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol Test conditions Min Max Unit
V
V
V
I
I
h
V
V
f
IC=- 100μA , IE=0 -160 V
(BR)CBO
IC= -1mA , IB=0 -160 V
(BR)CEO
I
(BR)EBO
V
CBO
V
EBO
V
FE
I
CE(sat)
I
BE
T
= -10μA, IC=0 -6 V
E
=-150 V , IE=0 -1 μA
CB
=-6V, IC=0 -1 μA
EB
=-5 V, IC=- 200mA 60 320
CE
= -500m A, IB= -50mA -1.5 V
C
= -5 mA, VCE=- 5V -0.75 V
C
V
= -5 V, IC= -200mA 15 MHz
CE
CLASSIFICATION OF hFE
Rank
Range
R O Y
60-120 100-200 160-320
A,Mar,2011
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