IXYS VWI6-12P1 Datasheet
Advanced Technical Information
IGBT Module
VWI 6-12P1
Sixpack in ECO-PAC 2
S 9
O 5
G 3
EG 1
L 9
A 1
N 9
R 5
C 1
X 18
W 14
K 10
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
±
20 V
TC = 25°C 6 A
TC = 80°C 4.1 A
VGE = 15/0 V; RG = 89 W; TVJ = 125°C 9.6 A
RBSOA, Clamped inductive load; L = 100 µH V
V
= V
; VGE = 15/0 V; RG = 89 W; TVJ = 125°C 10 µs
CES
CE
CES
TC = 25°C 40 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
min. typ. max.
NTC
B 5
D 5
H 5
K 12
J 13
I
C25
V
CES
V
CE(sat) typ.
= 6 A
= 1200 V
= 3.9 V
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IC = 4 A; VGE = 15 V; TVJ = 25°C 3.9 4.6 V
TVJ = 125°C 4.6 V
IC = 0.1 mA; VGE = V
V
= V
CE
V
CE
;VGE = 0 V; TVJ = 25°C 0.1 mA
CES
= 960 V; VGE = 0 V; TVJ = 125°C 0.5 mA
CE
35V
VCE = 0 V; VGE = ± 20 V 100 nA
Inductive load, T
= 125°C
VJ
VCE = 600 V; IC = 4 A
VGE = 15/0 V; RG = 89 W
VCE = 25 V; VGE = 0 V; f = 1 MHz 205 pF
V
= 960 V; VGE = 15 V; IC = 2 A 11 nC
CE
(per IGBT) 3.1 K/W
(per IGBT) with heatsink compound 6.2 K/W
30 ns
20 ns
290 ns
90 ns
0.4 mJ
0.2 mJ
1 - 2© 2001 IXYS All rights reserved
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
140
Advanced Technical Information
VWI 6-12P1
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 12 A
TC = 80°C 8 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
R
thJH
IF = 4 A; TVJ = 25°C 2.4 2.5 V
TVJ = 125°C 2.0 V
IF = ... A; diF/dt = ... A/µs; TVJ = 125°C tbd A
VR = 600 V; VGE = 0 V tbd ns
(per diode) 3.8 K/W
(per diode) with heatsink compound 7.6 K/W
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kW
3375 K
Dimensions in mm (1 mm = 0.0394")
Component
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
£ 1 mA; 50/60 Hz 3000 V~
ISOL
mounting torque (M4) 1.5 - 2.0 Nm
-40...+150 °C
-40...+125 °C
14 - 18 lb.in.
a Max. allowable acceleration 50 m/s
Symbol Conditions Characteristic Values
min. typ. max.
d
S
d
A
Creepage distance on surface (Pin to heatsink) 11.2 mm
Strike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
2
IXYS reserves the right to change limits, test conditions and dimensions.
2 - 2© 2001 IXYS All rights reserved
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