IXYS VWI 20-06P1 Service Manual
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VWI 20-06P1
IGBT Module
Sixpack in ECO-PAC 2
Preliminary data
S 9
N 5
A 1
F 3
G 1
L 9
N 9
R 5
C 1
X 18
W 14
K 10
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 60 0 V
±
20 V
TC = 25°C 19 A
TC = 80°C 14 A
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
RBSOA, Clamped inductive load; L = 100 µH V
V
= 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
CE
CES
TC = 25°C 73 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
min. typ. max.
A 5
D 5
H 5
K 12
NTC
J 13
I
C25
V
CES
V
CE(sat) typ.
= 19 A
= 600 V
= 1.9 V
Pin arangement see outlines
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IC = 10 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
IC = 0.35 mA; VGE = V
V
= V
CE
;VGE = 0 V; TVJ = 25°C 0.6 mA
CES
TVJ = 125°C 2.7 mA
CE
4.5 6.5 V
VCE = 0 V; VGE = ± 20 V 100 nA
Inductive load, T
= 125°C
VJ
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
V
= 300 V; VGE = 15 V; IC = 10 A 39 nC
CE
(per IGBT) 1.7 K/W
with heatsink compound (0.42 K/m.K; 50 µm) 3.4 K/W
www.ixys.net
35 ns
35 ns
230 ns
30 ns
0.4 mJ
0.3 mJ
308
1 - 5© 2003 IXYS All rights reserved
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
VWI 20-06P1
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 21 A
TC = 80°C 14 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
R
thJH
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IF = 10 A; TVJ = 25°C 1.9 2.1 V
TVJ = 125°C 1.4 V
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 11 A
VR = 300 V; VGE = 0 V 80 ns
3.5 K/W
with heatsink compound (0.42 K/m.K; 50 µm) 7.0 K/W
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
B
25/50
T = 25°C 4.75 5.0 5.25 kΩ
3375 K
Dimensions in mm (1 mm = 0.0394")
Component
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~
ISOL
mounting torque (M4) 1.5 - 2.0 Nm
-40...+150 °C
-40...+125 °C
14 - 18 lb.in.
a Max. allowable acceleration 50 m/s
Symbol Conditions Characteristic Values
min. typ. max.
d
S
d
A
Creepage distance on surface (Pin to heatsink) 11.2 mm
Strike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
2
IXYS reserves the right to change limits, test conditions and dimensions.
308
2 - 5© 2003 IXYS All rights reserved
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