IXYS VWI15-12P1 Datasheet
Advanced Technical Information
IGBT Module
VWI 15-12P1
Sixpack in ECO-PAC 2
S 9
N 5
A 1
F 3
G 1
L 9
N 9
R 5
C 1
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 1200 V
TC = 25°C 18 A
TC = 80°C 14 A
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
RBSOA, Clamped inductive load; L = 100 µH V
V
= 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
CE
TC = 25°C 90 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
min. typ. max.
X 18
W 14
K 10
±
20 V
CES
A 5
D 5
H 5
I
C25
V
CES
V
CE(sat) typ.
= 18 A
= 1200 V
= 2.3 V
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IC = 10 A; VGE = 15 V; TVJ = 25°C 2.3 2.7 V
TVJ = 125°C 2.7 V
IC = 0.4 mA; VGE = V
V
= V
CE
;VGE = 0 V; TVJ = 25°C 0.5 mA
CES
TVJ = 125°C 0.8 mA
CE
4.5 6.5 V
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, T
= 125°C
VJ
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
V
= 600 V; VGE = 15 V; IC = 10 A 45 nC
CE
(per IGBT) 1.4 K/W
(per IGBT) with heatsink compound 2.7 K/W
www.ixys.net
50 ns
40 ns
290 ns
60 ns
1.2 mJ
1.1 mJ
210
1 - 2© 2002 IXYS All rights reserved
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Advanced Technical Information
VWI 15-12P1
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 15 A
TC = 80°C 10 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
R
thJH
IF = 10 A; TVJ = 25°C 2.6 3.0 V
TVJ = 125°C 1.9 V
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
VR = 600 V; VGE = 0 V 110 ns
(per diode) 3.5 K/W
(per diode) with heatsink compound 5.0 K/W
Component
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~
ISOL
mounting torque (M4) 1.5 - 2.0 Nm
-40...+150 °C
-40...+125 °C
14 - 18 lb.in.
a Max. allowable acceleration 50 m/s
Dimensions in mm (1 mm = 0.0394")
2
Symbol Conditions Characteristic Values
min. typ. max.
d
S
d
A
Creepage distance on surface (Pin to heatsink) 11.2 mm
Strike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
IXYS reserves the right to change limits, test conditions and dimensions.
210
2 - 2© 2002 IXYS All rights reserved
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