IXYS VW2X45-16IO1, VW2X45-14IO1, VW2X45-12IO1, VW2X45-08IO1 Datasheet
VW 2x45
AC Controller Modules I
V
RSM
V
DSM
V
RRM
V
DRM
Type
VV
800 800 VW2x45-08io1
1200 1200 VW2x45-12io1
1400 1400 VW2x45-14io1
1600 1600 VW2x45-16io1
Symbol Test Conditions Maximum Ratings
I
RMS
I
TRMS
I
TAVM
I
TSM
TC = 85°C, (per phase) 45 A
TVJ = T
VJM
TC = 85°C; (180° sine ; per thyristor) 20 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 320 A
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 290 A
t = 10 ms (50 Hz), sine 270 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 430 A2s
T
(di/dt)
(dv/dt)
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
= T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 350 A2s
cr
TVJ = T
VJM
f =50 Hz, tP =200 ms
VD = 2/3 V
IG = 0.45 A non repetitive, IT = I
DRM
diG/dt = 0.45 A/ms
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
TVJ = T
I
= I
T
;V
VJM
VJM
TAVM
50/60 Hz, RMS t = 1 min 3000 V~
£ 1 mA t = 1 s 3600 V~
I
ISOL
Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.
t = 10 ms (50 Hz), sine 360 A2s
repetitive, IT = 45 A 100 A/ms
TAVM
= 2/3 V
DR
DRM
tp = 30 ms10W
tp = 300 ms5W
12 54
76 910
32 A
500 A/ms
1000 V/ms
0.5 W
10 V
-40...+125 °C
125 °C
-40...+125 °C
RMS
V
= 2x 45 A
= 800-1600 V
RRM
2
1
5
4
10
9
7
6
Features
●
Thyristor controller for AC (circuit
W2C acc. to IEC) for mains frequency
●
Soldering connections for PCB
mounting
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
UL applied
Applications
●
Switching and control of
three phase AC circuits
●
Softstart AC motor controller
●
Solid state switches
●
Light and temperature control
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Weight typ. 35 g
Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
739
1 - 3
VW 2x45
Symbol Test Conditions Characteristic Values
, I
I
D
R
V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
S
d
A
a Max. allowable acceleration 50 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
£ 5mA
IT= 45 A; TVJ = 25°C £ 1.52 V
For power-loss calculations only 0.85 V
15 mW
VD = 6 V; TVJ = 25°C £ 1.5 V
TVJ = -40°C £ 1.6 V
VD = 6 V; TVJ = 25°C £ 100 mA
TVJ = -40°C £ 200 mA
TVJ = T
;V
VJM
D
= 2/3 V
DRM
£ 0.2 V
£ 5mA
TVJ = 25°C; tP = 10 ms £ 450 mA
IG = 0.45 A; diG/dt = 0.45 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥ £ 200 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.45 A; diG/dt = 0.45 A/ms
TVJ = T
VR = 100 V; dv/dt = 15 V/ms; VD = 2/3 V
; IT = 20 A, tP = 200 ms; di/dt = -10 A/ms typ. 150 ms
VJM
DRM
DRM
£ 2 ms
per thyristor; DC 1.25 K/W
per module 0.31 K/W
per thyristor; DC 1.55 K/W
per module 0.39 K/W
Creeping distance on surface 12.7 mm
Creepage distance in air 9.4 mm
10
1: I
, T
= 125°C
GT
VJ
, T
= 25°C
2: I
GT
3: I
VJ
, T
= -40°C
GT
VJ
V
V
G
1
1
I
, T
= 125°C
GD
0.1
VJ
1 10 100 1000
Fig. 1 Gate trigger characteristics
1000
µs
t
gd
100
2
10
typ.
2
Limit
3
4
4: P
GAV
5: P
GM
6: P
GM
I
G
T
VJ
= 0.5 W
= 5 W
= 10 W
= 25°C
6
5
mA
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved
60
A
50
I
F
40
30
20
TVJ =125°C
TVJ = 25°C
10
0
0.0 0.5 1.0 1.5 2.0
V
V
T
Fig. 3 Forward current versus voltage
drop per leg
1
10 100 1000
mA
I
G
Fig. 2 Gate trigger delay time
200
A
175
I
RMS
150
125
100
75
50
25
0
0.01 0.1 1 10
T
T
t
= 125°C
VJ
= 85°C
K
s
VW2x45
Fig. 4 Rated RMS current versus time
(360° conduction)
2 - 3
739
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