IXYS VVZB120-16IO1, VVZB120-14IO1, VVZB120-12IO1 Datasheet
VVZB 120
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
V
RRM
V
1200 VVZB 120-12 io1
1400 VVZB 120-14 io1
1600 VVZB 120-16 io1
Symbol Conditions Maximum Ratings
I
dAV
I
FRMS/ITRMS
I
FSM/ITSM
I2t TVJ= 25°C, t = 10 ms, VR = 0 V 2810 A
(di/dt)
cr
Rectifier Bridge
(dv/dt)
cr
P
GM
P
GAVM
Type
T
= 80°C, sinusoidal 120° 12 0 A
case
T
= 80°C, per leg 77 A
case
TVJ= 25°C, t = 10 ms, VR = 0 V 750 A
TVJ= 150°C,t = 10 ms, VR = 0 V 670 A
TVJ= 150°C,t = 10 ms, VR = 0V 2240 A
TVJ = T
VJM
repetitive, IT = 150 A 150 A/µs
f = 50 Hz, tP = 200 µs
= 2/3 V
V
D
IG = 0.45 A, non repetitive, IT = I
DRM
/3 500 A/µs
d(AV)
diG/dt = 0.45 A/µs
TVJ = T
; VDR = 2/3 V
VJM
DRM
1000 V/µs
RGK = ¥; method 1 (linear voltage rise)
TVJ = T
IT = I
VJM
/3 tP =300 µs 5 W
d(AV)
tP =30µs 10 W
tP =10ms 1 W
0.5 W
V
I
dAV
= 1200-1600 V
RRM
= 120 A
Features
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Ultrafast freewheel diode
• Convenient package outline
Applications
• Drive Inverters with brake system
Advantages
• 2 functions in one package
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
V
CES
V
GE
I
C25
I
C80
I
CM
P
tot
V
RRM
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
TVJ= 25°C to 150°C 120 0 V
Continuous ± 20 V
T
= 25°C, DC 78 A
case
IGBT
T
= 80°C, DC 52 A
case
tp= Pulse width limited by T
T
= 80°C 222 W
case
T
= 80°C, rectangular d = 0.5 27 A
case
T
= 80°C, rectangular d = 0.5 38 A
case
T
= 80°C, tP = 10 µs, f = 5 kHz tbd A
case
VJM
TVJ= 45°C, t = 10 ms 200 A
TVJ= 150°C,t = 10 ms 180 A
P
tot
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
Fast Recovery Diode
T
= 80°C 64 W
case
© 2000 IXYS All rights reserved
140 A
1200 V
031
1 - 3
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VVZB 120
IR, I
VF, V
V
T0
r
T
V
GT
D
T
VR = V
VR = V
RRM/VDRM
RRM/VDRM
, 0.3 mA
, TVJ = 150°C 5 mA
IF = 100 A, 1.47 V
For power-loss calculations only 0.85 V
TVJ = 150°C 5 mW
VD= 6 V; TVJ = 25°C 1.5 V
TVJ = -40°C 1.6 V
I
GT
VD= 6 V; TVJ = 25°C 10 0 mA
TVJ = -40°C 20 0 mA
V
GD
I
GD
I
L
TVJ= T
TVJ= T
;VD = 2/3 V
VJM
;VD = 2/3 V
VJM
VD = 6 V; tG = 30 µs 450 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
I
H
t
gd
Rectifier Bridge
TVJ= T
VD = ½ V
; VD = 6 V; RGK = ¥ 200 mA
VJM
DRM
diG/dt = 0.45 A/µs; IG = 0.45 A
t
q
TVJ = T
; VR = 100 V; VD = 2/3 V
VJM
dv/dt = 10 V/µs; IT = 120 A; -di/dt = 10 A/µs
Q
S
I
RM
R
thJC
R
thJH
V
BR(CES)
V
GE(th)
I
GES
I
CES
V
CEsat
t
SC
(SCSOA) R
TVJ = T
VJM
-di/dt = 0.64 A/µs; IT/IF = 50 A 11 A
per thyristor / diode; sine 120° el. 1 K/W
per thyristor / diode; sine 120° el. 1.3 K/W
VGS = 0 V, IC = 1 m A 1200 V
IC = 10 mA 5 8 V
VGE= ± 20 V 500 nA
VCE = 0.8 V
VCE = 0.8 V
CES
= 150°C 3 mA
CES,TVJ
VGE = 15 V, IC = 50 A 3.35 V
VGE = 15 V, VCE = 0.6 V
= 11 W, non repetitive
G
RBSOA VGE = 15 V, VCE = 0.8 V
RG = 11 W, Clamped Inductive load, L = 100 µH
IGBT
DRM
DRM
; tP = 200 µs 150 µs
DRM
0.2 V
10 mA
90 µC
, TVJ = 125°C, 10 µs
CES
, TVJ = 125°C, 100 A
CES
2µs
0.5 mA
C
t
t
t
t
E
E
R
R
ies
d(on)
d(off)
ri
fi
on
off
thJC
thJH
VCE = 25 V, f = 1 MHz, VGE = 0 V 9 nF
VCE = 0.6 V
VGE = 15 V, RG = 11 W
CES
Inductive load; L = 100 µH
TVJ = 125°C
© 2000 IXYS All rights reserved
, IC = 25 A
65 ns
200 n s
tbd ns
tbd ns
4.1 mJ
5.7 mJ
0.32 K/W
0.45 K/W
2 - 3
Loading...