IXYS VVZ40-16IO1, VVZ40-14IO1, VVZ40-12IO1 Datasheet
VVZ 40
Three Phase Half Controlled
Rectifier Bridge
V
RSM
V
DSM
VV
1300 1200 VVZ 40-12io1
1500 1400 VVZ 40-14io1
1700 1600 VVZ 40-16io1
Symbol Test Conditions Maximum Ratings
I
dAV
I
dAVM
I
, I
FRMS
, I
I
FSM
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 510 A2s
I
(di/dt)
(dv/dt)
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 28 g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
TSM
TRMS
cr
cr
V
RRM
V
DRM
Type
6
1
5
7
4
TK = 100°C; module 34 A
module 43 A
per leg 25 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 320 A
VR = 0 t = 8.3 ms (60 Hz), sine 340 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 310 A
t = 10 ms (50 Hz), sine 290 A
VR = 0 t = 8.3 ms (60 Hz), sine 485 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 400 A2s
TVJ = T
VJM
f =400 Hz, tP =200 ms
VD = 2/3 V
IG = 0.3 A, non repetitive, IT = 1/3 • I
DRM
diG/dt = 0.3 A/ms
TVJ = T
RGK = ¥; method 1 (linear voltage rise)
; VDR = 2/3 V
VJM
t = 10 ms (50 Hz), sine 420 A2s
repetitive, IT = 50 A 150 A/ms
dAV
DRM
500 A/ms
1000 V/ms
10 V
TVJ = T
IT = I
TAVM
VJM
tp =30ms £ 10 W
tp = 500 ms £ 5W
tp =10ms £ 1W
0.5 W
-40...+125 °C
125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
£ 1 mA t = 1 s 3600 V~
I
ISOL
Mounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
3
I
dA VM
V
2
8
= 43 A
= 1200-1600 V
RRM
3
2
1
6
5
4
8
7
Features
●
Package with DCB ceramic base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
Soldering terminals
●
UL registered E 72873
Applications
●
Input rectifier for switch mode power
supplies (SMPS)
●
Softstart capacitor charging
●
Electric drives and auxiliaries
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
744
© 2000 IXYS All rights reserved
1 - 2
Symbol Test Conditions Characteristic Values
, I
I
R
D
, V
V
F
T
V
T0
r
T
V
GT
I
GT
VR = V
RRM
; VD = V
TVJ = T
DRM
VJM
TVJ = 25°C £ 0.3 mA
£ 5mA
IF, IT = 30 A, TVJ = 25°C £ 1.33 V
For power-loss calculations only 0.85 V
(TVJ = 125°C) 15 mW
VD = 6 V; TVJ = 25°C £ 1.0 V
TVJ = -40°C £ 1.2 V
VD = 6 V; TVJ = 25°C £ 65 mA
TVJ = -40°C £ 80 mA
TVJ = 125°C £ 50 mA
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
r
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
TVJ = T
TVJ = T
IG = 0.3 A; tG = 30 msTVJ = 25°C £ 150 mA
diG/dt = 0.3 A/msT
TVJ = 25°C; VD = 6 V; RGK = ¥£100 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.3 A; diG/dt = 0.3 A/ms
TVJ = 125°C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms typ. 150 ms
VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 V
per thyristor (diode); DC current 1.0 K/W
per module 0.17 K/W
per thyristor (diode); DC current 1.6 K/W
per module 0.27 K/W
Creeping distance on surface 7 mm
Creepage distance in air 7 mm
;V
VJM
;V
VJM
= 2/3 V
D
= 2/3 V
D
= -40°C £ 200 mA
VJ
TVJ = 125°C £ 100 mA
DRM
DRM
DRM
DRM
£ 0.2 V
£ 5mA
£ 2 ms
75 m C
VVZ 40
2
© 2000 IXYS All rights reserved
2 - 2
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