IXYS VVZ175-16IO7, VVZ175-14IO7, VVZ175-12IO7 Datasheet
VVZ 110
VVZ 175
Three Phase Half Controlled
Rectifier Bridge, B6HK
V
RSM
V
DSM
V V
1300 1200 VVZ 110-12io7 VVZ 175-12io7
1500 1400 VVZ 110-14io7 VVZ 175-14io7
1700 1600 VVZ 175-16io7
Symbol Test Conditions Maximum Ratings
I
dAV
I
FRMS
I
FSM
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 6600 11200 A2s
I
(di/dt)
(dv/dt)
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 300 g
V
RRM
V
DRM
Type
3
2
E
D
C
1
VVZ 110 VVZ 175
TC = 85°C; module 110 167 A
, I
TRMS
, I
TSM
per leg 58 89 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 1150 1500 A
VR = 0 t = 8.3 ms (60 Hz), sine 1230 1600 A
= T
T
VJ
VR = 0 t = 8.3 ms (60 Hz), sine 1070 1450 A
t = 10 ms (50 Hz), sine 1000 1350 A
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 6280 10750 A2s
= T
T
VJ
VR = 0 t = 8.3 ms (60 Hz), sine 4750 8830 A2s
cr
TVJ = T
f =400 Hz, tP =200 ms
VD = 2/3 V
IG = 0.3 A, non repetitive, 500 A/ms
diG/dt = 0.3 A/ms, IT = 1/3 • I
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
t = 10 ms (50 Hz), sine 5000 9100 A2s
VJM
repetitive, IT = 50 A 150 A/ms
VJM
DRM
dAV
; VDR = 2/3 V
VJM
DRM
1000 V/ms
10 V
TVJ = T
IT = I
TAVM
tp =30ms £ 10 W
VJM
tp = 500 ms £ 5W
tp =10ms £ 1W
0.5 W
-40...+125 °C
125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 2500 V~
£ 1 mA t = 1 s 3000 V~
I
ISOL
Mounting torque (M6) 5±15 % Nm
Terminal connection torque (M6) 5±15 % Nm
A
B
I
dA VM
V
= 110/167 A
= 1200-1600 V
RRM
E
D
C
~
~
~
B
A
3
2
1
Features
●
Package with screw terminals
●
Isolation voltage 3000 V~
●
Planar passivated chips
●
UL registered E72873
Applications
●
Input rectifier for PWM converter
●
Input rectifier for switch mode power
supplies (SMPS)
●
Softstart capacitor charging
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
+
-
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
VVZ 110
VVZ 175
Symbol Test Conditions Characteristic Values
VVZ 110 VVZ 175
, I
I
R
D
, V
V
F
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
VR = V
RRM
; VD = V
DRM
TVJ = T
VJM
TVJ = 25°C £ 0.3 mA
£ 5mA
IF, IT = 200 A, TVJ = 25°C £ 1.75 1.57 V
For power-loss calculations only 0.85 0.85 V
(TVJ = 125°C) 6 3.5 mW
VD = 6 V; TVJ = 25°C £ 1.5 V
TVJ = -40°C £ 1.6 V
VD = 6 V; TVJ = 25°C £ 100 mA
TVJ = -40°C £ 200 mA
TVJ = T
TVJ = T
;VD = 2/3 V
VJM
;VD = 2/3 V
VJM
DRM
DRM
£ 0.2 V
£ 5mA
IG = 0.3 A; tG = 30 msTVJ = 25°C £ 450 mA
diG/dt = 0.3 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥£200 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.3 A; diG/dt = 0.3 A/ms
DRM
£ 2 ms
per thyristor (diode); DC current 0.65 0.46 K/W
per module 0.108 0.077 K/W
per thyristor (diode); DC current 0.8 0.55 K/W
per module 0.133 0.092 K/W
Creeping distance on surface 10 mm
Creepage distance in air 9.4 mm
10
1: I
, T
= 125°C
GT
VJ
, T
= 25°C
2: I
GT
3: I
VJ
, T
= -40°C
GT
VJ
V
V
G
1
1
I
, T
= 125°C
GD
0.1
VJ
1 10 100 1000
Fig. 1 Gate trigger characteristics
120
A
VVZ 110
100
I
dAV
80
60
2
40
3
2
4
4: P
5: P
6: P
GAV
GM
GM
5
= 0.5 W
= 5 W
= 10 W
6
mA
I
G
Dimensions in mm (1 mm = 0.0394")
M6x10
94
80
72
26
15
54
27
C~
6.5
A+
3
2
1
12
26
D~ E~
B-
4
5
6
25
66
900
VVZ 110
A
800
7
3
I
FSM
700
30
TVJ = 45°C
600
500
400
TVJ = 125°C
300
6.5
200
100
-3
10
Fig. 3 Surge overload current
I
: Crest value, t: duration
FSM
20
0
0 50 100 150
°C
T
C
Fig. 2 DC output current at case
temperature
0.7
50 Hz
80% V
RRM
Z
thJC
K/W
0.6
VVZ 110
0.5
0.4
0.3
0.2
0.1
0.0
-2
10
-1
10
0
10
1
10
s
-3
10
t
-2
10
-1
10
0
10
1
10
s
t
Fig. 4 Transient thermal impedance
junction to case (per leg)
© 2000 IXYS All rights reserved
2 - 2
Loading...