IXYS VUO86-14NO7, VUO86-16NO7, VUO86-12NO7, VUO86-08NO7 Datasheet
VUO 86
Three Phase Rectifier Bridge
Preliminary data
V
RSM
V V
900 800 VUO 86-08NO7
1300 1200 VUO 86-12NO7
1500 1400 VUO 86-14NO7
1700 1600 VUO 86-16NO7
Symbol Test Conditions Maximum Ratings
① TC = 90°C, module 86 A
I
dAV
I
FSM
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 1400 A2s
I
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 18 g
V
RRM
Types
C
D
E
TVJ = 45°C; t = 10 ms (50 Hz), sine 530 A
VR = 0 t = 8.3 ms (60 Hz), sine 570 A
T
= T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 520 A
t = 10 ms (50 Hz), sine 480 A
VR = 0 t = 8.3 ms (60 Hz), sine 1360 A2s
T
= T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 1140 A2s
t = 10 ms (50 Hz), sine 1150 A2s
-40...+150 °C
150 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque (M4) 1.5 - 2 Nm
14 - 18 lb.in.
I
dA V
V
A
B
= 86 A
= 800-1600 V
RRM
Features
• Package with DCB ceramic
base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
Data according to IEC 60747 refer to a single diode unless otherwise stated
① for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
VR= V
VR= V
IF= 80 A; TVJ = 25°C £ 1.5 V
For power-loss calculations only 0.8 V
per diode; DC current 1.2 K/W
per module 0.2 K/W
per diode, DC current 1.5 K/W
per module 0.25 K/W
Creeping distance on surface 11.2 mm
Creepage distance in air 9.7 mm
;T
RRM
;T
RRM
= 25°C £ 0.5 mA
VJ
VJ
= T
VJM
£ 3mA
7.5 mW
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
2
002
1 - 1
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