IXYS VUO80-18NO7, VUO80-14NO7, VUO80-12NO7, VUO80-08NO7 Datasheet

© 2000 IXYS All rights reserved

1 - 2

I

dA VM

= 82 A

V

RRM

= 800-1800 V

V

RSM

V

RRM

Type

VV

900 800 VUO 80-08NO1
1300 1200 VUO 80-12NO1
1500 1400 VUO 80-14NO1
1700 1600 VUO 80-16NO1
1900 1800 VUO 80-18NO1

Symbol Test Conditions Characteristic Values
I

R

VR= V

RRM

TVJ = 25°C £ 0.3 mA

VR= V

RRM

TVJ = T

VJM

£ 6mA

V

F

IF= 80 A; TVJ = 25°C £ 1.5 V

V

T0

For power-loss calculations only 0.8 V

r

T

7.5 mW

R

thJH

per diode, 120° rect. 1.42 K/W
per module, 120° rect. 0.24 K/W

d

S

Creeping distance on surface 12.7 mm

d

A

Creepage distance in air 9.4 mm

a Max. allowable acceleration 50 m/s

2

Symbol Test Conditions Maximum Ratings
I

dAV

TK = 90°C, module 82 A

I

dAVM

module 82 A

I

FSM

TVJ = 45°C; t = 10 ms (50 Hz), sine 600 A
VR = 0 t = 8.3 ms (60 Hz), sine 640 A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 520 A

VR = 0 t = 8.3 ms (60 Hz), sine 555 A

I

2

t TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 1720 A2s
T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 1350 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 1295 A2s

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+130 °C

V

ISOL

50/60 Hz, RMS t = 1 min 3000 V~
I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2 - 2.5 Nm

(10-32UNF) 18-22 lb.in.

Weight typ. 35 g

Features

●

Package with DCB ceramic base plate

●

Isolation voltage 3600 V~

●

Planar passivated chips

●

Blocking voltage up to 1800 V

●

Low forward voltage drop

●

Leads suitable for PC board soldering

●

UL registered E72873

Applications

●

Supplies for DC power equipment

●

Input rectifiers for PWM inverter

●

Battery DC power supplies

●

Field supply for DC motors

Advantages

●

Easy to mount with two screws

●

Space and weight savings

●

Improved temperature and power
cycling

Dimensions in mm (1 mm = 0.0394")

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.

VUO 80

Three Phase
Rectifier Bridge

934

1

2

4

5

6

10

8

10

8
6

4/5

1/2

© 2000 IXYS All rights reserved

2 - 2

VUO 80

0.001 0.01 0.1 1

0

100

200

300

400

500

23456789110

10

2

10

3

10

4

0.00.51.01.52.0

0

10

20

30

40

50

60

70

80

0 1020304050607080

0

50

100

150

200

0 20 40 60 80 100 120 140

0.001 0.01 0.1 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

I2t

I

FSM

I

F

A

V

F

t

s

t

ms

P

tot

W

I

d(AV)M

A

T

amb

t

s

K/W

A

2

s

0 20 40 60 80 100 120 140

0

20

40

60

80

100

I

d(AV)M

T

H

A

V

A

°C °C

VUO 80

T

VJ

= 45°C

50Hz, 80% V

RRM

VR = 0 V

Fig. 1 Forward current versus voltage

drop per diode

Fig. 2 Surge overload current Fig. 3 I2t versus time per diode

Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus

heatsink temperature

Fig. 6 Transient thermal impedance junction to heatsink

Constants for Z

thJH

calculation:

iR

thi

(K/W) ti (s)

1 0.005 0.01
2 0.21 0.05
3 0.795 0.14
4 0.41 0.5

R

thHA

:

0.5 K/W

1.0 K/W

1.5K/W

2.0 K/W

3.0 K/W

4.0 K/W

6.0 K/W

T

VJ

= 150°C

T

VJ

= 45°C

TVJ=150°C
TVJ= 25°C

T

VJ

= 150°C

Z

thJH