IXYS VUO80 Data Sheet

VUO 80

Three Phase
Rectifier Bridge

V

RSM

VV

900 800 VUO 80-08NO1

V

RRM

Type

10

8
6

1300 1200 VUO 80-12NO1
1500 1400 VUO 80-14NO1
1700 1600 VUO 80-16NO1
1900 1800 VUO 80-18NO1

Symbol Test Conditions Maximum Ratings
I

dAV

I

dAVM

I

FSM

2

t TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s

I

TK = 90°C, module 82 A
module 82 A

TVJ = 45°C; t = 10 ms (50 Hz), sine 600 A
VR = 0 t = 8.3 ms (60 Hz), sine 640 A

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 555 A

t = 10 ms (50 Hz), sine 520 A

VR = 0 t = 8.3 ms (60 Hz), sine 1720 A2s

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 1295 A2s

T

VJ

T

VJM

T

stg

V

ISOL

M

d

50/60 Hz, RMS t = 1 min 3000 V~

£ 1 mA t = 1 s 3600 V~

I

ISOL

Mounting torque (M5) 2 - 2.5 Nm

t = 10 ms (50 Hz), sine 1350 A2s

-40...+150 °C
150 °C

-40...+130 °C

(10-32UNF) 18-22 lb.in.

Weight typ. 35 g

1/2

4/5

I

dA VM

V

= 82 A
= 800-1800 V

RRM

2

1

5

4

10

8

6

Features

●

Package with DCB ceramic base plate

●

Isolation voltage 3600 V~

●

Planar passivated chips

●

Blocking voltage up to 1800 V

●

Low forward voltage drop

●

Leads suitable for PC board soldering

●

UL registered E72873

Applications

●

Supplies for DC power equipment

●

Input rectifiers for PWM inverter

●

Battery DC power supplies

●

Field supply for DC motors

Advantages

●

Easy to mount with two screws

●

Space and weight savings

●

Improved temperature and power
cycling

Dimensions in mm (1 mm = 0.0394")

Symbol Test Conditions Characteristic Values
I

R

V

F

V

T0

r

T

R

thJH

d

S

d

A

a Max. allowable acceleration 50 m/s

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.

VR= V

RRM

VR= V

RRM

IF= 80 A; TVJ = 25°C £ 1.5 V
For power-loss calculations only 0.8 V

per diode, 120° rect. 1.42 K/W
per module, 120° rect. 0.24 K/W

Creeping distance on surface 12.7 mm
Creepage distance in air 9.4 mm

TVJ = 25°C £ 0.3 mA
TVJ = T

VJM

£ 6mA

7.5 mW

© 2000 IXYS All rights reserved

2

934

1 - 2

VUO 80

4

10

VR = 0 V

2

s

A

I2t

T

= 45°C

VJ

3

10

T

= 150°C

VJ

I

FSM

500

A

400

300

50Hz, 80% V

RRM

T

VJ

= 45°C

80

A

70

60

I

F

50

40

30

TVJ=150°C

200

TVJ= 25°C

T

20

100

= 150°C

VJ

10

0

0.00.51.01.52.0

V

V

F

Fig. 1 Forward current versus voltage

0

0.001 0.01 0.1 1

s

t

Fig. 2 Surge overload current Fig. 3 I2t versus time per diode

10

2

23456789110

t

drop per diode

200

W

150

P

tot

100

50

0

0 1020304050607080

I

d(AV)M

0 20 40 60 80 100 120 140

A

T

amb

R

:

thHA

0.5 K/W

1.0 K/W

1.5K/W

2.0 K/W

3.0 K/W

4.0 K/W

6.0 K/W

°C °C

100

A

80

I

d(AV)M

60

40

20

0

0 20 40 60 80 100 120 140

T

H

Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus

heatsink temperature

1.6

K/W

1.4

Z

thJH

1.2

ms

1.0

0.8

0.6

0.4

0.2

0.0

0.001 0.01 0.1 1 10

Fig. 6 Transient thermal impedance junction to heatsink

t

© 2000 IXYS All rights reserved

Constants for Z

iR

calculation:

thJH

(K/W) ti (s)

thi

1 0.005 0.01
2 0.21 0.05
3 0.795 0.14

VUO 80

s

4 0.41 0.5

2 - 2