IXYS VUO68 Data Sheet
VUO 68
Three Phase Rectifier Bridge
Preliminary data
V
RSM
V V
900 800 VUO 68-08NO7
1300 1200 VUO 68-12NO7
1500 1400 VUO 68-14NO7
1700 1600 VUO 68-16NO7
Symbol Test Conditions Maximum Ratings
I
① TC = 100°C, module 68 A
dAV
I
FSM
2
I
t TVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 18 g
V
RRM
Types
H
A
N
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 320 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 280 A
t = 10 ms (50 Hz), sine 260 A
VR = 0 t = 8.3 ms (60 Hz), sine 425 A2s
T
= T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 325 A2s
t = 10 ms (50 Hz), sine 340 A2s
-40...+150 °C
150 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque (M4) 1.5 - 2 Nm
14 - 18 lb.in.
I
dA V
V
D
K
= 68 A
= 800-1600 V
RRM
Features
• Package with DCB ceramic
base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
Data according to IEC 60747 refer to a single diode unless otherwise stated
① for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
VR= V
VR= V
IF= 55 A; TVJ = 25°C £ 1.46 V
For power-loss calculations only 0.8 V
per diode; DC current 1.1 K/W
per module 0.18 K/W
per diode, DC current 1.6 K/W
per module 0.27 K/W
Creeping distance on surface 11.2 mm
Creepage distance in air 9.7 mm
;T
RRM
;T
RRM
= 25°C £ 0.5 mA
VJ
VJ
= T
VJM
£ 3mA
13 mW
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
2
002
1 - 1
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