IXYS VUO60-18NO3, VUO60-16NO3, VUO60-14NO3, VUO60-12NO3 Datasheet

VUO 60

Three Phase
Rectifier Bridge

V

RSM

VV

1300 1200 VUO 60-12NO3
1500 1400 VUO 60-14NO3
1700 1600 VUO 60-16NO3
1900 1800 VUO 60-18NO3*

* delivery time on request

Symbol Test Conditions Maximum Ratings
I

dAV

I

dAVM

I

FSM

I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s

T

VJ

T

VJM

T

stg

V

ISOL

M

d

Weight typ. 50 g

V

RRM

Type

~
~
~

① TC = 85°C, module 72 A
① module 75 A

TVJ = 45°C; t = 10 ms (50 Hz), sine 600 A
VR = 0 t = 8.3 ms (60 Hz), sine 650 A

T

= T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 600 A

t = 10 ms (50 Hz), sine 540 A

VR = 0 t = 8.3 ms (60 Hz), sine 1770 A2s
TVJ = T

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 1510 A2s

t = 10 ms (50 Hz), sine 1460 A2s

-40...+125 °C
125 °C

-40...+125 °C

50/60 Hz, RMS t = 1 min 3000 V~
I

£ 1 mA t = 1 s 3600 V~

ISOL

Mounting torque (M5) 2-2.5 Nm

(10-32 UNF) 18-22 lb.in.

I

dA V

V

+

–

= 72 A
= 1200-1800 V

RRM

+

+

–

Features

●

Package with DCB ceramic base plate

●

Isolation voltage 3600 V~

●

Planar passivated chips

●

Blocking voltage up to 1800 V

●

Low forward voltage drop

●

¼" fast-on terminals

●

UL registered E 72873

Applications

●

Supplies for DC power equipment

●

Input rectifiers for PWM inverter

●

Battery DC power supplies

●

Rectifier for DC motors field current

Advantages

●

Easy to mount with two screws

●

Space and weight savings

●

Improved temperature and power
cycling

Dimensions in mm (1 mm = 0.0394")

~

~

~

–

Symbol Test Conditions Characteristic Values
I

R

V

F

V

T0

r

T

R

thJC

R

thJH

d

S

d

A

a Max. allowable acceleration 50 m/s

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
① for resistive load at bridge output
IXYS reserves the right to change limits, test conditions and dimensions.

VR= V
VR= V

IF= 150 A; TVJ = 25°C 1.9 V
For power-loss calculations only 0.8 V

per diode, DC current 1.2 K/W
per module 0.2 K/W
per diode, DC current 1.6 K/W
per module 0.27 K/W

Creep distance on surface 10 mm
Strike distance in air 9.4 mm

;T

RRM

;T

RRM

= 25°C 0.3 mA

VJ

= T

VJ

VJM

5mA

6.5 mW

© 2000 IXYS All rights reserved

2

Use output terminals in parallel
connection!

1 - 2

VUO 60

80

A

70

60

I

F

50

40

30

TVJ=125°C
TVJ= 25°C

20

10

0

0.0 0.5 1.0 1.5

V

V

F

Fig. 4 Forward current versus voltage

drop per diode

250

W

200

P

tot

150

100

600

A

50Hz, 80% V

RRM

10
A

4

2

s

VR = 0 V

500

I

FSM

T

VJ

= 45°C

I2t

400

T

= 45°C

VJ

300

10

3

T

= 125°C

VJ

200

T

100

0

0.001 0 .01 0.1 1

= 125°C

VJ

2

s

10

23456789110

t

Fig. 5 Surge overload current Fig. 6 I2t versus time per diode

80

A

I

d(AV)M

70

60

50

40

30

R

thHA

0.2 K/W

0.5 K/W

1.0 K/W

1.5 K/W

2.0 K/W

3.0 K/W

5.0 K/W

:

ms

t

50

20

10

0

0 10203040506070

I

d(AV)M

0 20 40 60 80 100 120

A

T

amb

°C °C

0

0 20406080100120

T

C

Fig. 7 Power dissipation versus direct output current and ambient temperature Fig. 8 Max. forward current versus

case temperature

1.8

K/W

1.6

1.4

Z

thJH

1.2

1.0

0.8

0.6

0.4

0.2

Constants for Z

iR

1 0.883 0.102
2 0.098 0.103
3 0.202 0.492

calculation:

thJH

(K/W) ti (s)

thi

4 0.417 0.62

0.0

0.001 0.01 0.1 1 10 100

Fig. 9 Transient thermal impedance junction to heatsink

s

t

© 2000 IXYS All rights reserved

706

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