IXYS VUM33-05N, VUO55-18NO7, VUO55-16NO7, VUO55-14NO7, VUO55-12NO7 Datasheet

VUM 33-05

Power MOSFET Stage
for Boost Converters

Module for Power Factor Correction

V

RRM (Diode)

V

DSS

Type

513278 46

I

D25

V
R

DSS

DS(on)

= 47 A
= 500 V
= 0.12 W

4

3

2

1

VV

600 500 VUM 33-05N

8

7

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

I

D

I

D

I

DM

P

D

I

S

I

SM

V

RRM

I

FAV

I

FSM

P TS= 85°C59W

V

RRM

I

dAV

I

FSM

P TS= 85°C50W

T

VJ

T

JM

T

stg

TVJ= 25°C to 150°C 500 V
TVJ= 25°C to 150°C; RGS = 10 kW 500 V
Continuous ±20 V

TS= 85°C33A
TS= 25°C47A
TS= 25°C, tp = ① 130 A

MOSFET

TS= 85°C 310 W
VGS= 0 V, TS = 25°C33A

VGS= 0 V, TS = 25°C, tp = ① 130 A

600 V

Features

●

Package with DCB ceramic base plate

●

Soldering connections for PCB
mounting

●

Isolation voltage 3600 V~

●

Low R

●

Low package inductance for high

HDMOSTM process

DS(on)

speed switching

●

Ultrafast boost diode

●

Kelvin source for easy drive

TS= 85°C, rectangular d = 0.5 33 A
TVJ= 45°C, t = 10 ms (50 Hz) 300 A

t = 8.3 ms (60 Hz) 320 A

T

= 150°C,t = 10 ms (50 Hz) 260 A

VJ

Boost DiodeModule Rectifier Diodes

t = 8.3 ms (60 Hz) 280 A

Applications

●

Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters

●

Boost topology for SMPS including
1~ rectifier bridge

●

Power supply for welding equipment

800 V

TS= 85°C, sinus 180° 54 A

Advantages

TVJ= 45°C, t = 10 ms (50 Hz) 300 A

●

t = 8.3 ms (60 Hz) 320 A

TVJ= 150°C,t = 10 ms (50 Hz) 260 A

t = 8.3 ms (60 Hz) 280 A

-40...+150 °C
150 °C

-40...+150 °C

3 functions in one package

●

Output power up to 8 kW

●

No external isolation

●

Easy to mount with two screws

●

Suitable for wave soldering

●

High temperature and power cycling
capability

●

Fits easiliy to all available PFC
controller ICs

6

5

V

ISOL

M

d

Weight 28 g

① Pulse width limited by T
IXYS reserves the right to change limits, test conditions and dimensions.

50/60 Hz t = 1 min 3000 V~
I

£ 1 mA t = 1 s 3600 V~

ISOL

Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.

VJ

© 2000 IXYS All rights reserved

1 - 4

VUM 33-05

Symbol Test Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

V
V

I

GSS

I

DSS

R
R

g
V

t

d(on)

t

d(off)

C
C
C

Q
R

V

I

R

DSS
GS(th)

DS(on)
Gint

fs
DS

iss
oss
rss

g

thJS

F

VGS = 0 V, ID = 2 mA 500 V
VDS= 20 V, ID = 20 mA 2 5 V

VGS= ±20 V, VDS = 0 V ±500 nA
VDS= 500 V, VGS = 0 V 2 mA
TVJ= 25°C 0.12 W

TVJ= 25°C 1.5 W
VDS= 15 V, IDS = 12 A 30 S

IDS= 24 A, VGS = 0 V 1.5 V

VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 W, L-load

100 ns
220 ns

8.5 nF

= 25 V, f = 1 MHz, VGS = 0 V

V

DS

0.9 nF

0.3 nF

VDS= 250 V, ID = 12 A, VGS = 10 V 350 nC

0.21 K/W

IF= 33 A; TVJ =25°C 1.75 V

TVJ =150°C 1.5 V

VR= 600 V, TVJ =25°C 1.5 mA
VR= 480 V, TVJ =25°C 0.25 mA

TVJ =125°C7mA

350

A

VR= 0.8V

300

250

I

FSM

200

150

100

50

0

0.001 0.01 0.1 1

RRM

TVJ= 45°C

TVJ= 125°C

t

Fig. 1 Non-repetitive peak surge

current (Rectifier Diodes)

500

A2s

400

300

2

I

t

200

100

TVJ= 45°C

TVJ= 125°C

s

V

T0

r

T

I

RM

R

thJS

V

F

I

R

V

T0

r

T

R

thJS

For power-loss calculations only 1.21 V
TVJ= 125°C9mW

IF= 30 A; -diF/dt = 240 A/ms
VR= 350 V, TVJ = 100°C1011A

0

110

t

Fig. 2 I2t for fusing (Rectifier Diodes)

1.1 K/W

IF= 20 A, TVJ =25°C 1.5 V

Dimensions in mm (1 mm = 0.0394")

TVJ =125°C 1.5 V

VR= 800 V TVJ =25°C 0.25 mA
VR= 640 V, TVJ =125°C2mA

For power-loss calculations only 1.18 V
TVJ= 125°C12mW

Rectifier Diodes Boost Diode MOSFET

1.3 K/W

ms

© 2000 IXYS All rights reserved

2 - 4