IXYS VUO52-16NO1, VUO52-14NO1, VUO52-12NO1, VUO52-08NO1, VUO52-18NO1 Datasheet
© 2000 IXYS All rights reserved
1 - 2
I
dA VM
= 55 A
V
RRM
= 800-1800 V
V
RSM
V
RRM
Type
VV
900 800 VUO 52-08NO1
1300 1200 VUO 52-12NO1
1500 1400 VUO 52-14NO1
1700 1600 VUO 52-16NO1
1900 1800 VUO 52-18NO1
Symbol Test Conditions Characteristic Values
I
R
VR= V
RRM
TVJ = 25°C £ 0.3 mA
VR= V
RRM
TVJ = T
VJM
£ 5mA
V
F
IF= 55 A; TVJ = 25°C £ 1.46 V
V
T0
For power-loss calculations only 0.8 V
r
T
12.5 mW
R
thJH
per diode, 120° rect. 1.5 K/W
per module, 120° rect. 0.25 K/W
d
S
Creeping distance on surface 12.7 mm
d
A
Creepage distance in air 9.4 mm
a Max. allowable acceleration 50 m/s
2
Symbol Test Conditions Maximum Ratings
I
dAV
TK = 90°C, module 54 A
I
dAV
TA = 45°C (R
thKA
= 0.5 K/W), module 43 A
I
dAVM
module 55 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 350 A
VR = 0 t = 8.3 ms (60 Hz), sine 375 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 305 A
VR = 0 t = 8.3 ms (60 Hz), sine 325 A
I
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 615 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 590 A2s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 465 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 445 A2s
T
VJ
-40...+130 °C
T
VJM
130 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M5) 2 - 2.5 Nm
(10-32UNF) 18-22 lb.in.
Weight typ. 35 g
Features
●
Package with DCB ceramic base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
Blocking voltage up to 1800 V
●
Low forward voltage drop
●
Leads suitable for PC board soldering
●
UL registered E72873
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
VUO 52
Three Phase
Rectifier Bridge
1
2
4
5
6
10
8
10
8
6
4/5
1/2
934
© 2000 IXYS All rights reserved
2 - 2
VUO 52
110
100
1000
T
K
I2t
I
dAVM
I
dAVM
t
A2s
ms
s
I
FSM
A
V
F
I
F
t
s
t
0.00.51.01.52.02.5
0
10
20
30
40
50
60
10
-3
10
-2
10
-1
10
0
0
50
100
150
200
250
300
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.4
0.8
1.2
1.6
A
0 2550751001251500 1020304050
0
40
80
120
160
200
0 255075100125150
0
10
20
30
40
50
60
TVJ = 130°C
T
VJ
= 25°C
max.
typ.
0.8 x V
RRM
50 Hz
TVJ = 45°C
TVJ = 130°C
P
tot
T
A
6
0.5
1
1.5
2
3
4
R
thKA
K/W
Zth
JK
Zth
JK
K/W
V
TVJ = 45°C
TVJ = 130°C
°C
A
W
A
°C
VUO 52
Fig. 2 Surge overload current per diode
I
FSM
: Crest value. t:duration
Fig. 3 I2t versus time (1-10 ms)
per diode
Fig. 1 Forward current versus voltage
drop per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
heatsink temperature T
K
Fig. 6 Transient thermal impedance junction to heatsink per diode
Constants for Z
thJK
calculation:
iR
th
(K/W) ti (s)
1 0.005 0.008
2 0.2 0.05
3 0.845 0.06
4 0.45 0.3
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