IXYS VUO 52 Service Manual

查询VUO 52-08NO1供应商

VUO 52

Three Phase
Rectifier Bridge

V

RSM

VV

900 800 VUO 52-08NO1

V

RRM

Type

10

8
6

1300 1200 VUO 52-12NO1
1500 1400 VUO 52-14NO1
1700 1600 VUO 52-16NO1
1900 1800 VUO 52-18NO1

Symbol Test Conditions Maximum Ratings
I

dAV

I

dAV

I

dAVM

I

FSM

2

t TVJ = 45°C t = 10 ms (50 Hz), sine 615 A2s

I

TK = 90°C, module 54 A
TA = 45°C (R
module 55 A

= 0.5 K/W), module 43 A

thKA

TVJ = 45°C; t = 10 ms (50 Hz), sine 350 A
VR = 0 t = 8.3 ms (60 Hz), sine 375 A

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 325 A

t = 10 ms (50 Hz), sine 305 A

VR = 0 t = 8.3 ms (60 Hz), sine 590 A2s

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 445 A2s

T

VJ

T

VJM

T

stg

V

ISOL

M

d

50/60 Hz, RMS t = 1 min 3000 V~

£ 1 mA t = 1 s 3600 V~

I

ISOL

Mounting torque (M5) 2 - 2.5 Nm

t = 10 ms (50 Hz), sine 465 A2s

-40...+130 °C
130 °C

-40...+125 °C

(10-32UNF) 18-22 lb.in.

Weight typ. 35 g

1/2

4/5

I

dA VM

V

= 55 A
= 800-1800 V

RRM

2

1

5

4

10

8

6

Features

●

Package with DCB ceramic base plate

●

Isolation voltage 3600 V~

●

Planar passivated chips

●

Blocking voltage up to 1800 V

●

Low forward voltage drop

●

Leads suitable for PC board soldering

●

UL registered E72873

Applications

●

Supplies for DC power equipment

●

Input rectifiers for PWM inverter

●

Battery DC power supplies

●

Field supply for DC motors

Advantages

●

Easy to mount with two screws

●

Space and weight savings

●

Improved temperature and power
cycling

Dimensions in mm (1 mm = 0.0394")

Symbol Test Conditions Characteristic Values
I

R

V

F

V

T0

r

T

R

thJH

d

S

d

A

a Max. allowable acceleration 50 m/s

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.

VR= V

RRM

VR= V

RRM

IF= 55 A; TVJ = 25°C £ 1.46 V
For power-loss calculations only 0.8 V

per diode, 120° rect. 1.5 K/W
per module, 120° rect. 0.25 K/W

Creeping distance on surface 12.7 mm
Creepage distance in air 9.4 mm

TVJ = 25°C £ 0.3 mA
TVJ = T

VJM

£ 5mA

12.5 mW

© 2000 IXYS All rights reserved

2

934

1 - 2

VUO 52

60

A

I

F

50

= 25°C

T

VJ

TVJ = 130°C

40

30

max.

typ.

20

10

0

0.00.51.01.52.02.5
V

F

Fig. 1 Forward current versus voltage

drop per diode

200

P

tot

W

160

120

80

300

A

I

FSM

50 Hz

0.8 x V

RRM

250

200

TVJ = 45°C

1000

A2s

I2t

TVJ = 45°C

150

TVJ = 130°C

100

TVJ = 130°C

50

0

V

-3

10

-2

10

-1

s

10

t

10

Fig. 2 Surge overload current per diode

I

: Crest value. t:duration

FSM

100

0

110

Fig. 3 I2t versus time (1-10 ms)

per diode

ms

t

60

K/W

R

0.5
1

thKA

I

dAVM

A

50

1.5
2
3

40

4
6

30

20

40

0

I

dAVM

0 2550751001251500 1020304050

A

°C

T

A

10

0

0 255075100125150

Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at

Zth

heatsink temperature T

1.6

JK

K/W

1.2

0.8

0.4

Zth

JK

Constants for Z

iR

calculation:

thJK

(K/W) ti (s)

th

1 0.005 0.008

K

2 0.2 0.05
3 0.845 0.06
4 0.45 0.3

0.0

VUO 52

-3

10

-2

10

-1

10

0

10

1

s

10

2

10

t

°C

T

K

Fig. 6 Transient thermal impedance junction to heatsink per diode

© 2000 IXYS All rights reserved

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