IXYS VUO35-18NO7, VUO35-16NO7, VUO35-14NO7, VUO35-12NO7, VUO35-06NO7 Datasheet
VUO 35
Three Phase
Rectifier Bridge
V
RSM
VV
600 600 VUO 35-06NO7
1200 1200 VUO 35-12NO7
1400 1400 VUO 35-14NO7
1600 1600 VUO 35-16NO7
1800 1800 VUO 35-18NO7*
* delivery time on request
Symbol Test Conditions Maximum Ratings
I
dAVM
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 800 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 135 g
V
RRM
Type
~
~
~
TC = 85°C, module 38 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 400 A
VR = 0 t = 8.3 ms (60 Hz), sine 440 A
T
= T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 400 A
t = 10 ms (50 Hz), sine 360 A
VR = 0 t = 8.3 ms (60 Hz), sine 810 A2s
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 670 A2s
t = 10 ms (50 Hz), sine 650 A2s
-40...+150 °C
150 °C
-40...+150 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque (M4) 1.5 ± 15 % Nm
13 ± 15 % lb.in.
Terminal connection torque (M4) 1.5 ± 15 % Nm
13 ± 15 % lb.in.
I
dA VM
V
+
–
= 38 A
= 1200-1800 V
RRM
~
~
~
+
Features
●
Package with screw terminals
●
Isolation voltage 3000 V~
●
Planar passivated chips
●
Blocking voltage up to 1800 V
●
Low forward voltage drop
●
UL registered E 72873
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
-
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
VR= V
VR= V
IF= 150 A; TVJ = 25°C £ 2.2 V
For power-loss calculations only 0.85 V
per diode; DC current 4.2 K/W
per module 0.7 K/W
per diode; DC current 4.8 K/W
per module 0.8 K/W
;T
RRM
;T
RRM
= 25°C £ 0.3 mA
VJ
= T
VJ
VJM
£ 5.0 mA
12 mW
© 2000 IXYS All rights reserved
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VUO 35
I2t
Fig. 1 Forward current versus Fig. 2 Surge overload current per diode Fig. 3 I2t versus time (1-10 ms)
voltage drop per diode I
: Crest value. t: duration per diode
FSM
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
case temperature
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.194 0.024
2 0.556 0.07
3 0.45 3.25
43.0 9.3
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.194 0.024
2 0.556 0.07
3 0.45 3.25
43.0 9.3
5 0.6 28.0
Fig. 6 Transient thermal impedance per diode
© 2000 IXYS All rights reserved
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