IXYS VUO30 Data Sheet
VUO 30
Three Phase Rectifier Bridge
V
RSM
V
RRM
Type
VV
900 800 VUO 30-08NO3
1300 1200 VUO 30-12NO3
1500 1400 VUO 30-14NO3
1700 1600 VUO 30-16NO3
1900 1800 VUO 30-18NO3*
* delivery time on request
Symbol Conditions Maximum Ratings
① TC = 85°C, module 37 A
I
dAV
I
① module 50 A
dAVM
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 330 A
TVJ = T
VJM
t = 10 ms (50 Hz), sine 270 A
VR = 0 t = 8.3 ms (60 Hz), sine 290 A
2
I
t TVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 460 A2s
TVJ = T
VJM
t = 10 ms (50 Hz), sine 365 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 355 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
50/60 Hz, RMS t = 1 min 3000 V~
I
< 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight typ. 50 g
Symbol Conditions Characteristic Values
I
R
VR= V
VR= V
V
F
V
T0
r
T
R
thJC
IF= 150 A; TVJ = 25°C 2.55 V
For power-loss calculations only 0.9 V
per diode, DC current 2.4 K/W
;T
RRM
;T
RRM
= 25°C 0.3 mA
VJ
= T
VJ
VJM
per module 0.4 K/W
R
thJH
per diode, DC current 3.0 K/W
per module 0.5 K/W
d
S
d
A
Creeping distance on surface 10 mm
Creepage distance in air 9.4 mm
a Max. allowable acceleration 50 m/s
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
① for resistive load at bridge output
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
+
~
~
~
–
-40...+125 °C
125 °C
-40...+125 °C
5mA
11 mΩ
I
dAV
V
= 37 A
= 800-1800 V
RRM
+
~
+
-
-
Features
• Package with DCB ceramic base plate
• Isolation voltage 3600 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• low forward voltage drop
• ¼" fast-on terminals
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Rectifier for DC motors field current
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
2
Use output terminals in parallel
connection!
~
~
E72873
20080527a
1 - 2
VUO 30
Fig. 1 Surge overload current
I
: Crest value, t: duration
FSM
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current
Fig. 4 Power dissipation versus forward current and ambient temperature
at case temperature
Fig. 5 Transient thermal impedance junction to heatsink per diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.489 0.0717
2 0.544 0.1241
3 1.376 0.1214
20080527a
2 - 2
Loading...