IXYS VUO25-16NO8, VUO25-18NO8, VUO25-14NO8, VUO25-12NO8, VUO25-06NO8 Datasheet
VUO 25
Three Phase
Rectifier Bridge
V
RSM
VV
600 600 VUO 25-06NO8
1200 1200 VUO 25-12NO8
1400 1400 VUO 25-14NO8
1600 1600 VUO 25-16NO8
1800 1800 VUO 25-18NO8
Symbol Test Conditions Maximum Ratings
I
dAV
I
dAVM
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 725 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight typ. 22 g
V
RRM
Type
~
~
~
TC = 85°C, module 20 A
TC = 63°C, module 25 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 380 A
V
= 0 t = 8.3 ms (60 Hz), sine 400 A
R
TVJ = T
VJM
= 0 t = 8.3 ms (60 Hz), sine 400 A
V
R
V
= 0 t = 8.3 ms (60 Hz), sine 750 A2s
R
TVJ = T
VJM
V
= 0 t = 8.3 ms (60 Hz), sine 650 A2s
R
t = 10 ms (50 Hz), sine 360 A
t = 10 ms (50 Hz), sine 650 A2s
-40...+150 °C
150 °C
-40...+150 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque (M5) 2 ± 10 % Nm
(10-32 UNF) 18 ± 10 % lb.in.
I
dA VM
V
+
–
= 25 A
= 1200-1800 V
RRM
~
~
+
Features
●
Package with ¼" fast-on terminals
●
Isolation voltage 3000 V~
●
Planar passivated chips
●
Blocking voltage up to 1800 V
●
Low forward voltage drop
●
UL registered E 72873
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Advantages
●
Easy to mount with one screw
●
Space and weight savings
●
Improved temperature and power
cycling
-
~
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
Data according to DIN IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
TVJ = 25°C; VR = V
TVJ = T
;V
VJM
= V
R
RRM
RRM
IF = 150 A; TVJ = 25°C £ 2.2 V
For power-loss calculations only 0.85 V
per diode; DC current 9.3 K/W
per module 1.55 K/W
per diode; DC current 10.2 K/W
per module 1.7 K/W
Creeping distance on surface 12.7 mm
Creepage distance in air 9.4 mm
£ 0.3 mA
£ 5.0 mA
12 mW
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
2
1 - 2
VUO 25
I2t
Fig. 1 Forward current versus Fig. 2 Surge overload current per diode Fig. 3 I2t versus time (1-10 ms)
voltage drop per diode I
: Crest value. t: duration per diode
FSM
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
case temperature
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.194 0.024
2 0.556 0.07
3 2.25 5.8
46.3 8.5
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.194 0.024
2 0.556 0.07
3 2.25 5.8
46.3 8.5
5 0.9 28.0
Fig. 6 Transient thermal impedance per diode
© 2000 IXYS All rights reserved
2 - 2
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