IXYS VUO16-18NO1, VUO16-16NO1, VUO16-14NO1, VUO16-12NO1, VUO16-08NO1 Datasheet
VUO 16
Three Phase
Rectifier Bridge
V
RSM
VV
900 800 VUO 16-08NO1
V
RRM
Type
10
8
6
1300 1200 VUO 16-12NO1
1500 1400 VUO 16-14NO1
1700 1600 VUO 16-16NO1
1900 1800 VUO 16-18NO1
Symbol Test Conditions Maximum Ratings
I
dAV
I
dAV
I
dAVM
I
FSM
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
I
TK = 90°C, module 15 A
TA = 45°C (R
module 20 A
= 0.5 K/W), module 20 A
thKA
TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 t = 8.3 ms (60 Hz), sine 106 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 90 A
t = 10 ms (50 Hz), sine 85 A
VR = 0 t = 8.3 ms (60 Hz), sine 47 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 33 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
50/60 Hz, RMS t = 1 min 3000 V~
£ 1 mA t = 1 s 3600 V~
I
ISOL
Mounting torque (M5) 2 - 2.5 Nm
t = 10 ms (50 Hz), sine 36 A2s
-40...+130 °C
130 °C
-40...+125 °C
(10-32UNF) 18-22 lb.in.
Weight typ. 35 g
1/2
4/5
I
dA VM
V
= 20 A
= 800-1800 V
RRM
2
1
5
4
10
8
6
Features
●
Package with DCB ceramic base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
Blocking voltage up to 1800 V
●
Low forward voltage drop
●
Leads suitable for PC board soldering
●
UL registered E72873
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
VR= V
RRM
VR= V
RRM
IF= 7 A; TVJ = 25°C £ 1.15 V
For power-loss calculations only 0.8 V
per diode, 120° rect. 4.5 K/W
per module, 120° rect. 0.75 K/W
Creeping distance on surface 12.7 mm
Creepage distance in air 9.4 mm
TVJ = 25°C £ 0.3 mA
TVJ = T
VJM
£ 5mA
50 mW
© 2000 IXYS All rights reserved
2
1 - 2
VUO 16
30
A
I
F
25
= 25°C
T
VJ
TVJ = 130°C
20
15
max.
typ.
10
5
0
0.00.51.01.52.02.5
V
V
F
Fig. 1 Forward current versus voltage
drop per diode
80
P
tot
W
70
60
50
40
30
100
A
I
FSM
50 Hz
0.8 x V
RRM
80
TVJ = 45°C
60
40
TVJ = 130°C
20
0
-3
10
-2
10
-1
s
10
10
t
Fig. 2 Surge overload current per diode
I
: Crest value. t:duration
FSM
K/W
R
thKA
0.5
1
1.5
2
3
4
6
100
A2s
I2dt
TVJ = 45°C
10
0
110
Fig. 3 I2t versus time (1-10 ms)
per diode
25
A
I
dAVM
20
15
10
TVJ = 130°C
ms
t
20
5
10
0
I
dAVM
0 2550751001251500 5 10 15 20 25
A
°C
T
A
0
0 255075100125150
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
Zth
heatsink temperature T
5
JK
K/W
4
3
2
1
Zth
JK
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
th
1 0.015 0.008
2 0.1 0.02
K
3 1.835 0.05
0
-3
10
-2
10
-1
10
0
10
1
s
10
2
10
t
4 2.55 0.4
°C
T
K
Fig. 6 Transient thermal impedance junction to heatsink per diode
© 2000 IXYS All rights reserved
2 - 2
Loading...