IXYS VUO 16 Service Manual

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VUO 16

Three Phase
Rectifier Bridge

V

RSM

VV

900 800 VUO 16-08NO1

V

RRM

Type

10

8
6

1300 1200 VUO 16-12NO1
1500 1400 VUO 16-14NO1
1700 1600 VUO 16-16NO1
1900 1800 VUO 16-18NO1

Symbol Test Conditions Maximum Ratings
I

dAV

I

dAV

I

dAVM

I

FSM

2

t TVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s

I

TK = 90°C, module 15 A
TA = 45°C (R
module 20 A

= 0.5 K/W), module 20 A

thKA

TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 t = 8.3 ms (60 Hz), sine 106 A

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 90 A

t = 10 ms (50 Hz), sine 85 A

VR = 0 t = 8.3 ms (60 Hz), sine 47 A2s

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 33 A2s

T

VJ

T

VJM

T

stg

V

ISOL

M

d

50/60 Hz, RMS t = 1 min 3000 V~

£ 1 mA t = 1 s 3600 V~

I

ISOL

Mounting torque (M5) 2 - 2.5 Nm

t = 10 ms (50 Hz), sine 36 A2s

-40...+130 °C
130 °C

-40...+125 °C

(10-32UNF) 18-22 lb.in.

Weight typ. 35 g

1/2

4/5

I

dA VM

V

= 20 A
= 800-1800 V

RRM

2

1

5

4

10

8

6

Features

●

Package with DCB ceramic base plate

●

Isolation voltage 3600 V~

●

Planar passivated chips

●

Blocking voltage up to 1800 V

●

Low forward voltage drop

●

Leads suitable for PC board soldering

●

UL registered E72873

Applications

●

Supplies for DC power equipment

●

Input rectifiers for PWM inverter

●

Battery DC power supplies

●

Field supply for DC motors

Advantages

●

Easy to mount with two screws

●

Space and weight savings

●

Improved temperature and power
cycling

Dimensions in mm (1 mm = 0.0394")

Symbol Test Conditions Characteristic Values
I

R

V

F

V

T0

r

T

R

thJH

d

S

d

A

a Max. allowable acceleration 50 m/s

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.

VR= V

RRM

VR= V

RRM

IF= 7 A; TVJ = 25°C £ 1.15 V
For power-loss calculations only 0.8 V

per diode, 120° rect. 4.5 K/W
per module, 120° rect. 0.75 K/W

Creeping distance on surface 12.7 mm
Creepage distance in air 9.4 mm

TVJ = 25°C £ 0.3 mA
TVJ = T

VJM

£ 5mA

50 mW

© 2000 IXYS All rights reserved

2

1 - 2

VUO 16

30

A

I

F

25

= 25°C

T

VJ

TVJ = 130°C

20

15

max.

typ.

10

5

0

0.00.51.01.52.02.5

V

V

F

Fig. 1 Forward current versus voltage

drop per diode

80

P

tot

W

70

60

50

40

30

100

A

I

FSM

50 Hz

0.8 x V

RRM

80

TVJ = 45°C

60

40

TVJ = 130°C

20

0

-3

10

-2

10

-1

s

10

10

t

Fig. 2 Surge overload current per diode

I

: Crest value. t:duration

FSM

K/W

R

thKA

0.5
1

1.5
2
3
4
6

100

A2s

I2dt

TVJ = 45°C

10

0

110

Fig. 3 I2t versus time (1-10 ms)

per diode

25

A

I

dAVM

20

15

10

TVJ = 130°C

ms

t

20

5

10

0

I

dAVM

0 2550751001251500 5 10 15 20 25

A

°C

T

A

0

0 255075100125150

Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at

Zth

heatsink temperature T

5

JK

K/W

4

3

2

1

Zth

JK

Constants for Z

iR

calculation:

thJK

(K/W) ti (s)

th

1 0.015 0.008
2 0.1 0.02

K

3 1.835 0.05

0

-3

10

-2

10

-1

10

0

10

1

s

10

2

10

t

4 2.55 0.4

°C

T

K

Fig. 6 Transient thermal impedance junction to heatsink per diode

© 2000 IXYS All rights reserved

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