IXYS VUO155-16NO1, VUO155-12NO1, VUO120-16NO1, VUO120-12NO1 Datasheet
VUO 120
VUO 155
Three Phase
Rectifier Bridge
V
Type V
RRM
V V
1200 VUO 120-12 NO1 1600 VUO 120-16 NO1
RRM
Type
A6
E6
K6
1200 VUO 155-12 NO1 1600 VUO 155-16 NO1
Symbol Test Conditions Maximum Ratings
VUO 120 VUO155
V
I
dAVM
I
FSM
RRM
TC= 75°C, sinusoidal 120° 121 157 A
TVJ= 45°C, t = 10 ms, VR = 0 V 650 850 A
1200/1600 1200/1600 V
TVJ= 150°C, t = 10 ms, VR = 0 V 580 760 A
2
I
t TVJ= 45°C, t = 10 ms, VR = 0 V 2110 3610 A
TVJ= 150°C, t = 10 ms, VR = 0V 1680 2880 A
P
tot
T
VJ
T
VJM
T
stg
V
ISOL
M
d
TC= 25°C per diode 150 190 W
-40...+150 °C
-40...+125 °C
50/60 Hz t = 1 min 3000 V~
I
≤ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 2-2.5 Nm
(10-32 unf) 18-22 lb.in.
d
S
d
A
Creep distance on surface 12.7 mm
Strike distance in air 9.4 mm
a Maximum allowable acceleration 50 m/s
Weight typ. 80 g
M1/O1
W5
option
Therm.
W6
M10/O10
150 °C
I
dA VM
V
= 121/157 A
= 1200-1600 V
RRM
Features
●
Soldering connections for PCB
mounting
●
Isolation voltage 3600 V~
●
Convenient package outline
●
UL registered E 72873
●
Case and potting UL94 V-0
Applications
●
Input Rectifier for Drive Inverters
Advantages
●
Easy to mount with two screws
●
Suitable for wave soldering
●
High temperature and power cycling
capability
2
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
R
V
F
V
F0
r
T
R
thJC
R
thJH
R
(option) Siemens S 891/2,2/+9 2.2 kΩ
25
IXYS reserves the right to change limits, test conditions and dimensions
VR = V
VR = V
,TVJ =25°C0.3mA
RRM
,TVJ = 150°C5mA
RRM
IF = 150 A, TVJ =25°C VUO 120 1.59 V
VUO 155 1.49 V
For power-loss calculations only VUO 120 0.80 V
TVJ = 150°C VUO 120 6.1 mΩ
VUO 155 0.75 V
VUO 155 4.6 mΩ
per diode VUO 120 1.0 K/W
VUO 155 0.8 K/W
VUO 120 1.3 K/W
VUO 155 1.1 K/W
© 2002 IXYS All rights reserved
211
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VUO 120
150
A
120
I
F
90
60
TVJ = 150°C
T
= 25°C
VJ
30
0
0.0 0.5 1.0 1.5 2.0
Fig. 1 Forward current versus voltage
V
V
F
drop per diode
150
W
P
tot
100
4
10
VR = 0 V
2
A
s
I2t
I
700
A
600
FSM
500
50 Hz, 80% V
RRM
TVJ = 45°C
400
300
TVJ = 45°C
200
100
0
0.001 0.01 0.1 1
TVJ = 150°C
TVJ = 150°C
3
s
10
23456789110
t
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
I
d(AV)M
140
A
120
100
80
R
:
thKA
0.7 KW
1 KW
1.4 KW
2 KW
3 KW
5 KW
ms
t
50
0
0 20 40 60 80 100 120
I
d(AV)M
0 20 40 60 80 100 120 140
A
T
amb
°C °C
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°
1.2
K/W
1.0
0.8
0.6
0.4
0.2
0.0
0.01 0.1 1 10
VUO 120
s
t
Fig. 6 Transient thermal impedance junction to case
60
40
20
0
0 20 40 60 80 100 120 140
T
C
Fig. 5 Max. forward current versus
case temperature
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.003521 0.01
2 0.1479 0.05
3 0.5599 0.14
4 0.2887 0.5
© 2002 IXYS All rights reserved
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