IXYS VUM85-05A Datasheet
VUM 85-05A
Rectifier Module
for Three Phase Power Factor Correction
Preliminary data
V
RRM
(FAST Diode) (Diode, Thyr.) (MOSFET)
VVV
600 500 500 VUM 85-05A
Symbol Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
V
GS
I
D
I
D25
I
DM
E
AR
P
tot
V
RRM,VDRM
I
DAV
I
, I
FSM
P
tot
V
RRM
I
FAV
I
FSM
P
tot
T
VJ
T
JM
T
stg
V
ISOL
M
d
Weight 80 g
TSM
V
RRM, DRM
V
DSS
Type
MOSFET T 1
TVJ= 25°C to 150°C 500 V
TVJ= 25°C to 150°C; RG = 1 MW 500 V
Transient ±30 V
Continuous ±20 V
TC = 100°C, TVJ = 125°C60A
TC= 25°C, TVJ = 150°C 130 A
TC= 25°C, TVJ = 150°C 520 A
TC= 25°C60mJ
TC= 25°C 1380 W
Single Phase Bridge Th1, D2, D3, D4
500 V
TVJ= 150°C, TC = 100°C47A
TVJ= 45°C, t = 10 ms (50 Hz) 320 A
t = 8.3 ms (60 Hz) 340 A
TVJ= 150°C,t = 10 ms (50 Hz) 280 A
t = 8.3 ms (60 Hz) 300 A
TC= 25°C; per diode 90 W
Fast Diodes D5, D6
600 V
TVJ= 150°C, TC = 100°C, rectangular d = 0.5 31 A
TVJ= 45°C, t = 10 ms (50 Hz) 250 A
TC= 25°C95W
Module
-40...+150 °C
150 °C
-40...+125 °C
I
£ 1 mA 50/60 Hz 3600 V~
ISOL
Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.
V
I
R
DSS
D25
DS(on)
= 500 V
= 130 A
= 36 mW
E 72873
Features
●
Package with DCB ceramic base plate
●
Soldering connections for PCB mounting
●
Isolation voltage 3600 V~
●
Low R
●
Low package inductance for high speed
HDMOSTM process
DS(on)
switching
●
Ultrafast diodes
●
Kelvin source for easy drive
●
UL recognized
Applications
●
Three phase PFC by Kolar circuit
●
Three phase input rectifier with power
factor correction consisting of three
modules VUM 85-05
●
For power supplies, UPS, SMPS, drives,
welding etc.
Advantages
●
Reduced harmonic content of input
currents corresponding to standards
●
Rectifier generates maximum DC power
with a given AC fuse
●
Wide input voltage range
●
No external isolation
●
Easy to mount with two screws
●
Suitable for wave soldering
●
High temperature and power cycling
capability
© 2000 IXYS All rights reserved
1 - 3
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
MOSFET T 1
V
I
I
R
GSS
DSS
GS(th)
DS(on)
VDS = ±20 V, ID = 30 mA 2 3 4 V
VGS = ±20 V, VDS = 0 V ±1.5 µA
VDS = V
VDS = 0,8•V
ID = ½ I
,VGS = 0 V 0.5 1.4 mA
DSS
, VGS = 10 V, pulse test 36 mW
D25
= 0 V, TVJ = 125°C17mA
DSS,VGS
t £ 300 µs, d £ 2%
g
t
d(on)
t
r
t
d(off)
t
f
C
C
C
Q
Q
Q
R
R
fs
iss
oss
rss
g
gs
g
thJC
thCH
VDS = 10 V, ID = ½ I
VDS = ½ V
, ID = ½ I
DSS
, t = < 300 µs 75 145 S
D25
, VGS = 15 V
D25
RG = 1 W, L = 100 µH, TVJ = 125°C
VDS = 25 V, f = 1 MHz, VGS = 0 V
VDS = ½ V
, ID = ½ I
DSS
, VGS = 15 V
D25
16 25 ns
33 45 ns
65 80 ns
30 40 ns
30 nF
3nF
1nF
945 1120 nC
195 280 nC
435 595 nC
0.09 K/W
0.05 K/W
Single Phase Bridge Th1, D2, D3, D4
V
F
, V
T
IF, IT = 45 A, TVJ =25°C 1.50 V
TVJ =125°C 1.55 V
I
, I
RRM
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
V
RGM
I
H
I
L
(di/dt)
DRM
cr
VD, VR = V
DRM, VRRM
VD, VR = 0,8•V
,TVJ = 25°C 0.5 1.4 mA
DRM, VRRM
,TVJ = 125°C17mA
For power-loss calculations only 0.85 V
TVJ= 150°C14mW
VD = 6 V 1.5 V
100 mA
VD = 2/3 V
,TVJ = 150°C 0.2 V
DRM
5mA
10 V
VD = 6 V, RGK =
oo
200 mA
IG = 0.45 A, diG/dt = 0.45 A/µs, tp = 10 µs 450 mA
IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3V
, TVJ = 150°C, IT = 45 A, repetitive 150 A/µs
DRM
IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3V
t
gd
t
q
IG = 0.45 A, diG/dt = 0.45 A/µs, VD = ½ V
IT = 20 A, di/dt = -10 A/µs, VR = 100 V, VD = 2/3V
, TVJ = 150°C, IT = I
DRM
, non-repetitive 500 A/µs
DAV
DRM
150 µs
DRM
2µs
tp = 200 µs, dv/dt = 15 V/µs, TVJ = 150°C
P
GM
IT = I
, TVJ = 150°Ct
d(AV)
= 30 µs 10 W
p
tp = 300 µs 5 W
P
R
R
GAVM
thJC
thCH
DC per diode / thyristor 1.3 K/W
DC per diode / thyristor 0.4 K/W
0,5 W
VUM 85-05A
© 2000 IXYS All rights reserved
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