IXYS VUM25-05 Datasheet
Advanced Technical Information
VUM 25-05
Rectifier Module
for Three Phase Power Factor Correction
Using fast recovery epitaxial diodes and MOSFET
1
V
RRM (Diode)
VV
600 500 VUM 25-05E
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
I
S
I
SM
V
DSS
Type
6
10
9
2
3
5
TVJ= 25°C to 150°C 500 V
TVJ= 25°C to 150°C; RGS = 10 kW 500 V
Continuous ±20 V
TS= 85°C24A
TS= 25°C35A
TS= 25°C, tp = ① 95 A
MOSFET
TS= 85°C 170 W
VGS= 0 V, TS = 25°C24A
VGS= 0 V, TS = 25°C, tp = ① 95 A
V
I
D25
R
DSS
DS(on)
= 500 V
= 35 A
= 0.12 W
3
2
1
6
5
10
9
Features
●
Package with DCB ceramic base plate
●
Soldering connections for PCB
mounting
●
Isolation voltage 3600 V~
●
Low R
●
Low package inductance for high
HDMOSTM process
DS(on)
speed switching
●
Ultrafast diodes
●
Kelvin source for easy drive
V
I
I
dAV
FSM
RRM
TS= 85°C, rectangular d = 0.5 40 A
TVJ= 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
DiodesModule
TVJ= 150°C,t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
600 V
Applications
●
Three phase input rectifier with power
factor correction consisting of three
modules VUM 25-05
●
For power supplies, UPS, SMPS,
drives, welding etc.
P TS= 85°C36W
T
VJ
T
JM
T
stg
V
ISOL
M
d
Weight 35 g
50/60 Hz t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.
-40...+150 °C
150 °C
-40...+150 °C
Advantages
●
Reduced harmonic content of input
currents corresponding to standards
●
Rectifier generates maximum DC
power with a given AC fuse
●
Wide input voltage range
●
No external isolation
●
Easy to mount with two screws
●
Suitable for wave soldering
●
High temperature and power cycling
capability
① Pulse width limited by T
IXYS reserves the right to change limits, test conditions and dimensions.
VJ
826
© 2000 IXYS All rights reserved
1 - 4
VUM 25-05
Symbol Test Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
GSS
I
DSS
R
R
g
V
t
d(on)
t
d(off)
C
C
C
Q
R
DSS
GS(th)
DS(on)
Gint
fs
DS
iss
oss
rss
g
thJS
VGS = 0 V, ID = 2 mA 500 V
VDS= 20 V, ID = 20 mA 2 5 V
VGS= ±20 V, VDS = 0 V ±500 nA
VDS= 500 V, VGS = 0 V 2 mA
TVJ= 25°C 0.12 W
TVJ= 25°C1.5W
VDS= 15 V, IDS = 12 A 30 S
IDS= 24 A, VGS = 0 V 1.5 V
VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 W, L-load
100 ns
220 ns
8.5 nF
V
= 25 V, f = 1 MHz, VGS = 0 V
DS
0.9 nF
0.3 nF
VDS= 250 V, ID = 12 A, VGS = 10 V 350 nC
0.38 K/W
Dimensions in mm (1 mm = 0.0394")
V
F
I
R
IF= 22 A; TVJ =25°C 1.65 V
TVJ = 150°C1.4V
VR= 600 V, TVJ =25°C1.5mA
VR= 480 V, TVJ =25°C 0.25 mA
TVJ = 125°C7mA
V
T0
r
T
I
RM
R
thJS
For power-loss calculations only 1.14 V
Diodes MOSFET
TVJ= 125°C10mW
IF= 30 A; -diF/dt = 240 A/ms
VR= 350 V, TVJ = 100°C1011A
1.8 K/W
© 2000 IXYS All rights reserved
2 - 4
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