IXYS VUM24-05N Datasheet

© 2000 IXYS All rights reserved

1 - 4

I

D25

= 35 A

V

DSS

= 500 V

R

DS(on)

= 0.12 W

Symbol Test Conditions Maximum Ratings

V

DSS

TVJ= 25°C to 150°C 500 V

V

DGR

TVJ= 25°C to 150°C; RGS = 10 kW 500 V

V

GS

Continuous ±20 V

I

D

TS= 85°C24A

I

D

TS= 25°C35A

I

DM

TS= 25°C, tp = ① 95 A

P

D

TS= 85°C 170 W

I

S

VGS= 0 V, TS = 25°C24A

I

SM

VGS= 0 V, TS = 25°C, tp = ① 95 A

V

RRM

600 V

I

dAV

TS= 85°C, rectangular d = 0.5 40 A

I

FSM

TVJ= 45°C, t = 10 ms (50 Hz) 300 A

t = 8.3 ms (60 Hz) 320 A

TVJ= 150°C,t = 10 ms (50 Hz) 260 A

t = 8.3 ms (60 Hz) 280 A

P TS= 85°C36W

V

RRM

800 V

I

dAV

TS= 85°C, sinus 180° 40 A

I

FSM

TVJ= 45°C, t = 10 ms (50 Hz) 300 A

t = 8.3 ms (60 Hz) 320 A

T

VJ

= 150°C,t = 10 ms (50 Hz) 260 A

t = 8.3 ms (60 Hz) 280 A

P TS= 85°C33W

T

VJ

-40...+150 °C

T

JM

150 °C

T

stg

-40...+150 °C

V

ISOL

50/60 Hz t = 1 min 3000 V~
I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.

Weight 28 g

Module for Power Factor Correction

MOSFET

Boost DiodeModule Rectifier Diodes

Features

●

Package with DCB ceramic base plate

●

Soldering connections for PCB
mounting

●

Isolation voltage 3600 V~

●

Low R

DS(on)

HDMOSTM process

●

Low package inductance for high
speed switching

●

Ultrafast boost diode

●

Kelvin source for easy drive

Applications

●

Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters

●

Boost topology for SMPS including
1~ rectifier bridge

●

Power supply for welding equipment

Advantages

●

3 functions in one package

●

Output power up to 5 kW

●

No external isolation

●

Easy to mount with two screws

●

Suitable for wave soldering

●

High temperature and power cycling
capability

●

Fits easiliy to all available PFC
controller ICs

① Pulse width limited by T

VJ

IXYS reserves the right to change limits, test conditions and dimensions.

VUM 24-05

V

RRM (Diode)

V

DSS

Type

VV

600 500 VUM 24-05N

Power MOSFET Stage
for Boost Converters

5

7

6

8

3

2

4

1

513278 46

© 2000 IXYS All rights reserved

2 - 4

Symbol Test Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

V

DSS

VGS = 0 V, ID = 2 mA 500 V

V

GS(th)

VDS= 20 V, ID = 20 mA 2 5 V

I

GSS

VGS= ±20 V, VDS = 0 V ±500 nA

I

DSS

VDS= 500 V, VGS = 0 V 2 mA

R

DS(on)

TVJ= 25°C 0.12 W

R

Gint

TVJ= 25°C1.5W

g

fs

VDS= 15 V, IDS = 12 A 30 S

V

DS

IDS= 24 A, VGS = 0 V 1.5 V

t

d(on)

100 ns

t

d(off)

220 ns

C

iss

8.5 nF

C

oss

0.9 nF

C

rss

0.3 nF

Q

g

VDS= 250 V, ID = 12 A, VGS = 10 V 350 nC

R

thJS

0.38 K/W

V

F

IF= 22 A; TVJ =25°C 1.65 V

TVJ = 150°C1.4V

I

R

VR= 600 V, TVJ =25°C1.5mA
VR= 480 V, TVJ =25°C 0.25 mA

TVJ = 125°C7mA

V

T0

For power-loss calculations only 1.14 V

r

T

TVJ= 125°C10mW

I

RM

IF= 30 A; -diF/dt = 240 A/ms
VR= 350 V, TVJ = 100°C1011A

R

thJS

1.8 K/W

V

F

IF= 20 A, TVJ =25°C1.4V

TVJ = 125°C1.4V

I

R

VR= 800 V TVJ =25°C 0.25 mA
VR= 640 V, TVJ = 125°C2mA

V

T0

For power-loss calculations only 1.05 V

r

T

TVJ= 125°C16mW

R

thJS

2 K/W

VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 W, L-load

V

DS

= 25 V, f = 1 MHz, VGS = 0 V

Rectifier Diodes Boost Diode MOSFET

Fig. 1 Non-repetitive peak surge

current (Rectifier Diodes)

VUM 24-05

Fig. 2 I2t for fusing (Rectifier Diodes)

Dimensions in mm (1 mm = 0.0394")

t

I

2

t

A2s

A

I

FSM

0.001 0.01 0.1 1

0

50

100

150

200

250

300

350

110

0

100

200

300

400

500

s

ms

t

VR= 0.8V

RRM

TVJ= 45°C

TVJ= 125°C

TVJ= 45°C

TVJ= 125°C