IXYS VUI30-12N1 Datasheet

Advanced Technical Information

Rectifier Module for
Three Phase Power Factor Correction

Typical Rectified Mains Power

Pn = 15 kW

at Vn = 400 V 3~; fT = 15 kHz; TC = 80°C

VUI 30-12 N1

Transistor T

Symbol Conditions Maximum Ratings
V

CES

V

GES

I

C25

I

C80

I

CM

V

CEK

t

SC

(SCSOA) non-repetitive

TVJ = 25°C to 150°C 1200 V

±

20 V

TC = 25°C 95 A
TC = 80°C 65 A

VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 100 A
RBSOA; L = 100 µH V

V

= V

CE

; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 10 µs

CES

CES

Symbol Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

V

V
I

I
t

t
t
t
E
E

C
Q

R
R

CES

GES

d(on)

r
d(off)
f

CE(sat)

GE(th)

on
off

ies
Gon

thJC
thJH

VJ

IC = 20 A; VGE = 15 V; TVJ = 25°C 1.7 2.0 V

TVJ = 125°C 1.9 V

IC = 2 mA; VGE = V

V

= V

CE

CES; VGE

CE

= 0 V; TVJ = 25°C 1.6 mA

TVJ = 125°C 1.8 mA

VCE = 0 V; VGE = ± 20 V 400 nA

Inductive load, T

= 125°C

VJ

VCE = 600 V; IC = 20 A
VGE = ±15 V; RG = 22 Ω

VCE = 25 V; VGE = 0 V; f = 1 MHz 3.3 nF
VCE= 600 V; VGE = 15 V; IC = 50 A 240 nC

with heatsink transfer paste 0.6 K/W

min. typ. max.

4.5 6.5 V

100 ns

70 ns

500 ns

70 ns

3.0 mJ

2.2 mJ

0.3 K/W

Features

• NPT IGBT with low saturation voltage

• fast recovery epitaxial diodes (FRED)

• module package:

- high level of integration

- solder terminals for PCB mounting

- isolated DCB ceramic base plate

- large creepage and strike distances

Applications

Three phase rectifier with power factor
correction, set up as follows:

• input from three phase mains

- wide range of input voltage

- mains currents approximately sinusoidal
in phase with mains voltage

- topology permits to control overcurrent
such as in case of input voltage peaks

• output

- direct current link

- buck type converter - reduced output
voltage

- possibility to supply boost converter,
inverter etc.

• required components

- one power semiconductor module per
phase

- one inductor and one capacitor per
phase on mains side

- output inductor, depending on supplied
circuit

IXYS reserves the right to change limits, test conditions and dimensions.

© 2001 IXYS All rights reserved

IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]

106

1 - 2

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]

Advanced Technical Information

Diodes D1 - D4

Symbol Conditions Maximum Ratings

VUI 30-12 N1

V

RRM

I

F25

I

F80

TVJ = 25°C to 150°C 1200 V

TC = 25°C 40 A
TC = 80°C 25 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

R

I

RM

t

rr

R

thJC

R

thJH

IF = 20 A; TVJ = 25°C 2.2 2.4 V

TVJ = 125°C 1.9 V

VR = V
VR = 0.8V

;TVJ = 25°C 0.75 mA

RRM

;TVJ = 125°C 2 mA

RRM

IF = 30A; diF/dt = -250 A/µs; TVJ = 125°C 16 A
VR = 540 V 400 ns

1.3 K/W

with heat transfer paste 2.6 K/W

Module

Symbol Conditions Maximum Ratings
T

VJ

T

stg

V

ISOL

M

d

I

≤ 1 mA; 50/60 Hz; t = 1 min 3600 V~

ISOL

Mounting torque (M5) 2 - 2.5 Nm

-40...+150 °C

-40...+125 °C

Symbol Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

dA, d

VJ

S

min. typ. max.

5mm

Weight 35 g

Dimensions in mm (1 mm = 0.0394")

© 2001 IXYS All rights reserved

IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]

106

2 - 2

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]