IXYS VUE50-18NO1 Datasheet

© 2000 IXYS All rights reserved

1 - 2

V

RRM

= 1200 V

I

dA V

= 50 A

t

rr

= 40 ns

Symbol Test Conditions Maximum Ratings
I

dAV

TK = 85°C, module 50 A

I

FSM

TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
VR = 0 t = 8.3 ms (60 Hz), sine 210 A

TVJ = T

VJM

t = 10 ms (50 Hz), sine 185 A

VR = 0 t = 8.3 ms (60 Hz), sine 195 A

I2t TVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 180 A2s
TVJ = T

VJM

t = 10 ms (50 Hz), sine 170 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 160 A2s

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+125 °C

V

ISOL

50/60 Hz, RMS t = 1 min 3000 V~
I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2 - 2.5 Nm

(10-32UNF) 18-22 lb.in.

Weight typ. 35 g

Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.

Symbol Test Conditions Characteristic Values

typ. max

I

R

VR= V

RRM

TVJ = 25°C 0.75 mA

VR= 0.8 V

RRM

TVJ = 125°C47mA

V

F

IF= 30 A; TVJ = 25°C 2.55 V

V

T0

For power-loss calculations only 1.65 V

r

T

18.2 mW

R

thJS

per diode, 120° rect. 1.5 K/W
per module, 120° rect. 0.25 K/W

I

RM

IF = 30 A, -diF/dt = 240 A/ms1618A
VR = 540 V, L £ 0.05 mH, TVJ = 100°C

t

rr

IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C4060ns

d

S

Creeping distance on surface 12.7 mm

d

A

Creepage distance in air 9.4 mm

a Max. allowable acceleration 50 m/s

2

V

RSM

V

RRM

Type

VV

1200 1200 VUE 50-12NO1

Features

●

Package with DCB ceramic base plate

●

Isolation voltage 3600 V~

●

Planar passivated chips

●

Leads suitable for PC board soldering

●

Creeping and creepage-distance
fulfils UL 508/CSA 22.2NO14 and
VDE 0160 requirements

●

Epoxy meet UL94V-O

●

UL registered E72873

Applications

●

Supplies for DC power equipment

●

Input rectifiers for PWM inverter

●

Output filter for PWM inverter

Advantages

●

Reduced EMI/RFI

●

Easy to mount with two screws

●

Space and weight savings

●

Improved temperature and power
cycling

Use output terminals in parallel connections

Dimensions in mm (1 mm = 0.0394")

VUE 50

Three Phase
Rectifier Bridge

1

2

4

5

6

10

8

10

8
6

4/5

1/2

© 2000 IXYS All rights reserved

2 - 2

VUE 50

Fig. 7 Transient thermal impedance junction to heatsink Fig. 8 Power dissipation versus direct output current

and ambient temperature

0 200 400 600

0

10

20

30

40

50

0 200 400 600

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

0.0

0.5

1.0

1.5

2.0

t

A/

m

s

04080120160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 200 400 600

0

20

40

60

80

100

0

600

1200

1800

2400

3000

-diF/dt

I

RM

A/ms

Z

thJS

s

K/W

diF/dt

t

fr

V

FR

ns

V

V

FR

µs

-di

F

/dt

t

rr

typ.

max.

T

VJ

t

rr

K

f

I

RM

°C

A

max.

typ.

01234

0

10

20

30

40

50

60

70

V

V

F

I

F

A

IF=15A

I

F

=30A

I

F

=60A

I

F

=30A

TVJ=100°C

VR= 540V

TVJ=100°C

I

F

=15A

I

F

=30A

I

F

=60A

I

F

=30A

TVJ=150°C

T

VJ

= 25°C

I

dAVM

0 25 50 75 100 125 150

0

10

20

30

40

50

60

A

°C

V

R

=540 V

IF=30A

T

VJ

=125°C

0 1020304050

0

50

100

150

200

250

300

W

I

dAVM

A

0 25 50 75 100 125 150

T

A

0.2

0.5

1.0

1.5

2.0

4.0

6.0

°C

0.05

0.2

0.75

0.5

0.07

0.13

0.2

0.04

R

thJSi

t

i

T

S

tfr

A/

m

s

R

thSA

(K/W)

Fig. 1 Forward current Fig. 2 Maximum forward current at Fig. 3 Typical peak reverse current
versus voltage drop per diode. heatsink temperature TS. versus -diF/dt.

Fig. 4 Dynamic parameters versus Fig. 5 Typical recovery time Fig. 6 Typical peak forward voltage and
junction temperature. versus -di

F

/dt. forward recovery time versus -diF/dt.

-