IXYS VUE30-20NO1 Datasheet
© 2000 IXYS All rights reserved
1 - 1
Three Phase
Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
Symbol Conditions Maximum Ratings
I
dAV
TC = 65°C, module 30 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 75 A
VR = 0
TVJ = T
VJM
t = 10 ms (50 Hz), sine 65 A
VR = 0
I2dt TVJ = 45°C t = 10 ms (50 Hz), sine 28 A2s
VR = 0
TVJ = T
VJM
t = 10 ms (50 Hz), sine 21 A2s
VR = 0
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M5) 2 - 2.5 Nm
(10-32UNF) 18 - 22 lb.in.
Weight typ. 35 g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
V
RSM
V
RRM
Type
VV
2000 2000 VUE 30-20NO1
Features
●
Package with DCB ceramic base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
Leads suitable for PC board soldering
●
Creeping and creepage-distance
fulfil UL 508/CSA 22.2NO14 and
VDE 0160 requirements
●
Epoxy meets UL94V-O
●
UL registered E72873
Applications
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Output filter for PWM inverter
Advantages
●
Reduced EMI/RFI
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
VUE 30
I
dAV
= 30 A
V
RRM
= 2000 V
t
rr
= 70 ns
Symbol Conditions Characteristic Values
typ. max
I
R
VR= V
RRM
TVJ = 25°C 0.75 mA
VR= 0.8 V
RRM
TVJ = 125°C 4 7 mA
V
F
IF= 12 A TVJ = 25°C 5.41 V
V
T0
For power-loss calculations only 3.3 V
r
T
93 mW
R
thJC
per diode, DC 1.7 K/W
R
thCH
0.3 K/W
I
RM
IF = 12 A, -diF/dt = 100 A/ms 9 12 A
VR = 540 V, L £ 0.05 mH, TVJ = 100°C
t
rr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C 70 90 ns
d
S
Creeping distance on surface 12.7 mm
d
A
Creepage distance in air 9.4 mm
a Max. allowable acceleration 50 m/s
2
030
~
~
~
–
+
8
5
1
10
6
Preliminary data
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