IXYS VUC25-14GO2, VUC25-16GO2, VUC25-12GO2 Datasheet
VUC 25
Three Phase
Rectifier Bridge
with Fast Diodes and "Softstart" Thyristor
V
RSM
V
DSM
VV
1300 1200 VUC 25-12go2
1500 1400 VUC 25-14go2
V
RRM
V
DRM
Type
1
6
7
1700 1600 VUC 25-16go2
Symbol Test Conditions Maximum Ratings
Diode Thyristor
I
dAV
I
dAVM
I
TAVM
, I
I
FSM
TSM
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 450 545 A2s
I
TK = 85°C; module 25 - A
module 28 - A
TK = 85°C; (DC) - 26 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 330 A
VR = 0 t = 8.3 ms (60 Hz), sine 330 370 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 300 330 A
t = 10 ms (50 Hz), sine 270 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 460 575 A2s
(di/dt)
(dv/dt)
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 380 460 A2s
cr
TVJ = T
VJM
f =400 Hz, tP =200 ms
VD = 2/3 V
IG = 0.3 A, non repetitive, IT = I
DRM
diG/dt = 0.3 A/ms
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
TVJ = T
I
= I
T
; VDR = 2/3 V
VJM
VJM
TAVM
50/60 Hz, RMS t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 2-2.5 Nm
t = 10 ms (50 Hz), sine 365 450 A2s
repetitive, IT = 50 A 150 A/ms
TAVM
DRM
tp = 30 ms £ 10 W
tp = 10 ms £ 1W
-40...+125 °C
-40...+125 °C
(10-32 UNF) 18-22 lb.in.
Weight typ. 28 g
4
8
500 A/ms
200 V/ms
10 V
0.5 W
125 °C
I
dA VM
I
TAVM
V
2
3
5
= 28 A
= 26 A
= 1200-1600 V
RRM
3
2
1
5
4
8
7
6
Features
●
Package with DCB ceramic base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
Fast recovery diodes to reduce EMI
●
Separate thyristor for softstart
●
Solderable terminals
●
UL registered E 72873
Applications
●
Input rectifier for switching power
supplies (SMPS)
●
Softstart capacitor charging
●
Electric drives and auxiliaries
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
●
Up to 10 dB lower EMI/RFI
compared to standard rectifier
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
Symbol Test Conditions Characteristic Values
Diode Thyristor
, I
I
R
D
, V
V
F
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
t
rr
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 50 m/s
VR = V
RRM
; VD = V
TVJ = T
DRM
VJM
TVJ = 25°C £ 0.3 £ 0.3 mA
£ 5 £ 5mA
IF = 55 A; IT = 45 A, TVJ = 25°C £ 2.2 £ 1.5 V
For power-loss calculations only 1.2 1.1 V
(TVJ = 125°C) 18 11 mW
VD = 6 V; TVJ = 25°C £ 1.5 V
VD = 6 V; TVJ = 25°C £ 80 mA
TVJ = T
TVJ = T
;V
VJM
;V
VJM
= 2/3 V
D
= 2/3 V
D
DRM
DRM
£ 0.2 V
£ 5mA
TVJ = 25°C; tG = 30 ms £ 300 mA
IG = 0.3 A; diG/dt = 0.3 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥£100 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.3 A; diG/dt = 0.3 A/ms
DRM
£ 2.5 ms
TVJ = 125°C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms typ. 130 ms
VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 V
DRM
TVJ = 25°C; IF = 10 A; £ 1.5 - ms
-di/dt = 10 A/ms, VR = 1/2 V
RRM
per thyristor (diode); DC current 2.3 0.9 K/W
per module 0.38 - K/W
per thyristor (diode); DC current 2.9 1.1 K/W
per module 0.48 - K/W
Creeping distance on surface 7 mm
Creepage distance in air 7 mm
VUC 25
2
© 2000 IXYS All rights reserved
2 - 2
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