IXYS VUB71-16NO1, VUB71-12NO1 Datasheet

© 2000 IXYS All rights reserved

1 - 2

V

RRM

Type

V

1200 VUB 71-12 NO1
1600 VUB 71-16 NO1

IGBTFast Recovery Diode

Module

Rectifier Diodes

Symbol Test Conditions Maximum Ratings

V

RRM

1200 / 1600 V

I

dAV

TH= 110°C, sinusoidal 120° 59 A

I

dAVM

limited by leads 70 A

I

FSM

TVJ= 45°C,t = 10 ms, VR = 0 V 530 A
TVJ= 150°C,t = 10 ms, VR = 0 V 475 A

I

2

t TVJ= 45°C,t = 10 ms, VR = 0 V 1400 A

TVJ= 150°C,t = 10 ms, VR = 0V 1130 A

P

tot

TH= 25°C per diode 90 W

V

CES

TVJ= 25°C to 150°C 1200 V

V

GE

Continuous ± 20 V

I

C25

TH= 25°C, DC 43 A

I

C80

TH= 80°C, DC 29 A

I

CM

tp= Pulse width limited by T

VJM

90 A

P

tot

TH= 80°C 160 W

V

RRM

1200 V

I

FAV

TH= 80°C, rectangular d = 0.5 9 A

I

FRMS

TH= 80°C, rectangular d = 0.5 14 A

I

FRM

TH= 80°C, tP = 10 ms, f = 5 kHz 90 A

I

FSM

TVJ= 45°C, t = 10 ms 75 A
TVJ= 150°C,t = 10 ms 60 A

P

tot

TH= 25°C40W

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+125 °C

V

ISOL

50/60 Hz t = 1 min 3000 V~
I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2-2.5 Nm

(10-32 unf) 18-22 lb.in.

Weight typ. 35 g

Features

●

Soldering connections for PCB
mounting

●

Isolation voltage 3600 V~

●

Ultrafast freewheeling diode

●

Convenient package outline

●

UL registered E 72873

●

Thermistor

Applications

●

Drive Inverters with brake system

Advantages

●

2 functions in one package

●

No external isolation neccessary

●

Easy to mount with two screws

●

Suitable for wave soldering

●

High temperature and power cycling
capability

Dimensions in mm (1 mm = 0.0394")

VUB 71

749

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.

V

RRM

= 1200-1600 V

I

dAVM

= 70 A

Three Phase Rectifier Bridge

with IGBT and Fast Recovery Diode
for Braking System

1

2

4

5

6

7

9

10

© 2000 IXYS All rights reserved

2 - 2

VUB 71

I

R

VR= V

RRM

,TVJ =25°C 0.2 mA

VR= 800 V, TVJ =150 °C46mA

V

F

IF= 12 A, TVJ =25°C 2.7 V

V

T0

For power-loss calculations only 1.65 V

r

T

TVJ= 150°C46mW

I

RM

IF= 25 A, -diF/dt = 100 A/ms 6.5 7 A
VR= 100 V

t

rr

IF= 1 A, -diF/dt = 100 A/ms5070ns
VR= 30 V

R

thJH

3.12 K/W

R

25

Siemens Typ S 891/2,2k/+9 2,2 kW

d

S

Creep distance on surface 12.7 mm

d

A

Strike distance in air 9.4 mm

a Maximum allowable acceleration 50 m/s

2

Symbol Test Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

Rectifier Diodes

V

BR(CES)

VGS = 0 V, IC = 3 mA 1200 V

V

GE(th)

IC = 10 mA 5 8 V

I

GES

VGE= ± 20 V 500 nA

I

CES

TVJ = 25°C, VCE = V

CES

700 mA

TVJ = 125°C, VCE = 0.8 V

CES

1.5 mA

V

CEsat

VGE = 15 V, IC = 25 A 2.9 V

t

SC

VGE = 15 V, VCE = 600 V, TVJ = 125°C, 10 ms

(SCSOA) R

G

= 22 W, non repetitive

RBSOA VGE = 15 V, VCE = 800 V, TVJ = 125°C, 50 A

RG = 22 W, Clamped Inductive load, L = 100 mH

C

ies

VCE = 25 V, f = 1 MHz, VGE = 0 V 4.5 nF

t

d(on)

300 ns

t

d(off)

350 ns

t

fi

1600 ns

E

on

6mJ

E

off

8mJ

R

thJH

0.8 K/W

I

R

VR = V

RRM

,TVJ =25°C 0.1 mA

VR = V

RRM

,TVJ = 150°C3mA

V

F

IF = 25 A, TVJ =25°C 1.3 V

V

T0

For power-loss calculations only 0.85 V

r

T

TVJ = 150°C 8.5 mW

R

thJH

per diode 1.42 K/W

Rectifier Diodes

Fast Recovery Diode

VCE = 600 V, IC = 25 A
VGE = 15 V, RG = 22 W
Inductive load; L = 100 mH
TVJ = 125°C

IGBT

Module

NTC

749