IXYS VUB60-16N01, VUB60-12N01 Datasheet
© 2000 IXYS All rights reserved
1 - 4
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
Type
V
1200 VUB 60-12 NO1
1600 VUB 60-16 NO1
IGBTFast Recovery Diode
Module
Rectifier Diodes
Symbol Test Conditions Maximum Ratings
V
RRM
1200 / 1600 V
I
dAV
TH= 110°C, sinusoidal 120° 59 A
I
dAVM
limited by leads 70 A
I
FSM
TVJ= 45°C,t = 10 ms, VR = 0 V 530 A
TVJ= 150°C,t = 10 ms, VR = 0 V 475 A
I2t TVJ= 45°C,t = 10 ms, VR = 0 V 1400 A
TVJ= 150°C,t = 10 ms, VR = 0V 1130 A
P
tot
TH= 80°C per diode 49 W
V
CES
TVJ= 25°C to 150°C 1200 V
V
GE
Continuous ± 20 V
I
C25
TH= 25°C, DC 31 A
I
C70
TH= 70°C, DC 23 A
I
C80
TH= 80°C, DC 21 A
I
CM
tp= Pulse width limited by T
VJM
62 A
P
tot
TH= 80°C 70W
V
RRM
1200 V
I
FAV
TH= 80°C, rectangular d = 0.5 8 A
I
FRMS
TH= 80°C, rectangular d = 0.5 12 A
I
FRM
TH= 80°C, tP = 10 µs, f = 5 kHz 90 A
I
FSM
TVJ= 45°C, t = 10 ms 75 A
TVJ= 150°C,t = 10 ms 60 A
P
tot
TH= 80°C22W
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M5) 2-2.5 Nm
(10-32 unf) 18-22 lb.in.
Weight typ. 35 g
Features
●
Soldering connections for PCB
mounting
●
Isolation voltage 3600 V~
●
Ultrafast freewheel diode
●
Convenient package outline
●
UL registered E 72873
●
Thermistor
Applications
●
Drive Inverters with brake system
Advantages
●
2 functions in one package
●
No external isolation
●
Easy to mount with two screws
●
Suitable for wave soldering
●
High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
VUB 60
V
RRM
= 1200-1600 V
I
dAVM
= 70 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
1
2
4
5
6
7
9
10
© 2000 IXYS All rights reserved
2 - 4
VUB 60
I
R
VR= V
RRM
,TVJ =25°C 0.2 mA
VR= 800 V, TVJ =150 °C6mA
V
F
IF= 12 A, TVJ =25°C 2.7 V
V
T0
For power-loss calculations only 1.65 V
r
T
TVJ= 150°C46mW
I
RM
IF= 25 A, -diF/dt = 100 A/ms 6.5 7 A
VR= 100 V
t
rr
IF= 1 A, -diF/dt = 100 A/ms5070ns
VR= 30 V
R
thJH
3.12 K/W
R
25
Siemens Typ S 891/2,2k/+9 2.2 kW
d
S
Creep distance on surface 12.7 mm
d
A
Strike distance in air 9.4 mm
a Maximum allowable acceleration 50 m/s
2
Symbol Test Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Rectifier Diodes
V
BR(CES)
VGS = 0 V, IC = 3 mA 1200 V
V
GE(th)
IC = 10 mA 5 7.5 V
I
GES
VGE= ± 20 V 500 nA
I
CES
TVJ = 25°C, VCE = 800 V 250 mA
TVJ = 125°C, VCE = 800 V 1 mA
V
CEsat
VGE = 15 V, IC = 25 A 3.5 V
t
SC
VGE = 15 V, VCE = 600 V, TVJ = 125°C, 10 ms
(SCSOA) R
G
= 4.7 W, non repetitive
RBSOA VGE = 15 V, VCE = 800 V, TVJ = 125°C, 50 A
RG = 4.7 W, Clamped Inductive load, L = 100 mH
C
ies
VCE = 25 V, f = 1 MHz, VGE = 0 V 2.85 nF
t
d(on)
100 ns
t
d(off)
220 ns
t
fi
1600 ns
E
on
3.5 mJ
E
off
12 mJ
R
thJH
1 K/W
I
R
VR = V
RRM
,TVJ =25°C 0.1 mA
V
R
= V
RRM
,TVJ = 150°C3mA
V
F
IF = 25 A, TVJ =25°C 1.3 V
V
T0
For power-loss calculations only 0.85 V
r
T
TVJ = 150°C 8.5 mW
R
thJH
per diode 1.42 K/W
Rectifier Diodes
110
10
100
1000
10000
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
70
80
V
F
A
I
F
0.001 0.01 0.1 1
0
100
200
300
400
500
V
s
t
VR= 0.8V
RRM
TVJ= 45°C
TVJ= 150°C
I
2
t
A2s
A
I
FSM
ms
t
VR= 0 V
TVJ= 25°C
T
VJ
=150°C
max.
TVJ= 150°C
TVJ= 45°C
typ.
Fig. 3 I2t versus time per rectifier diode
Fig. 2 Surge overload current per
rectifier diode
Fig. 1 Forward current versus voltage
drop per rectifier diode
Fast Recovery Diode
VCE = 600 V, IC = 25 A
VGE = 15 V, RG = 4.7 W
Inductive load; L = 100 mH
TVJ = 125°C
IGBT
Module
NTC
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