IXYS VUB51-16NO1, VUB51-12NO1 Datasheet

© 2000 IXYS All rights reserved

1 - 2

V

RRM

= 1200-1600 V

I

dAV

= 51 A

V

RRM

Type

V

1200 VUB 51-12 NO1
1600 VUB 51-16 NO1

IGBTFast Recovery Diode

Module

Rectifier Diodes

Symbol Test Conditions Maximum Ratings

V

RRM

1200 / 1600 V

I

dAV

TH= 110°C, sinusoidal 120° 51 A

I

dAVM

limited by leads 70 A

I

FSM

TVJ= 45°C,t = 10 ms, VR = 0 V 300 A
TVJ= 150°C,t = 10 ms, VR = 0 V 260 A

I2t TVJ= 45°C,t = 10 ms, VR = 0 V 450 A

TVJ= 150°C,t = 10 ms, VR = 0V 340 A

P

tot

TH= 25°C per diode 80 W

­V

CES

TVJ= 25°C to 150°C 1200 V

V

GE

Continuous ± 20 V

I

C25

TH= 25°C, DC 31 A

I

C80

TH= 80°C, DC 21 A

I

CM

tp= Pulse width limited by T

VJM

62 A

P

tot

TH= 25°C 130 W

V

RRM

1200 V

I

FAV

TH= 80°C, rectangular d = 0.5 9 A

I

FRMS

TH= 80°C, rectangular d = 0.5 14 A

I

FRM

TH= 80°C, tP = 10 ms, f = 5 kHz 90 A

I

FSM

TVJ= 45°C, t = 10 ms 75 A
TVJ= 150°C,t = 10 ms 60 A

P

tot

TH= 25°C40W

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+125 °C

V

ISOL

50/60 Hz t = 1 min 3000 V~
I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2-2.5 Nm

(10-32 unf) 18-22 lb.in.

Weight typ. 35 g

Features

●

Soldering connections for PCB
mounting

●

Isolation voltage 3600 V~

●

Ultrafast freewheel diode

●

Convenient package outline

●

UL registered E 72873

Applications

●

Drive Inverters with brake system

Advantages

●

2 functions in one package

●

No external isolation

●

Easy to mount with two screws

●

Suitable for wave soldering

●

High temperature and power cycling
capability

Dimensions in mm (1 mm = 0.0394")

VUB 51

749

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.

Three Phase Rectifier Bridge

with IGBT and Fast Recovery Diode
for Braking System

Preliminary data

1

2

4

5

6

7

9

10

© 2000 IXYS All rights reserved

2 - 2

VUB 51

I

R

VR= V

RRM

,TVJ =25°C 0.2 mA

VR= 800 V, TVJ =150 °C6mA

V

F

IF= 12 A, TVJ =25°C 2.7 V

V

T0

For power-loss calculations only 1.65 V

r

T

TVJ= 150°C46mW

I

RM

IF= 25 A, -diF/dt = 100 A/ms 6.5 7 A
VR= 100 V TJ = 100°C

t

rr

IF= 1 A, -diF/dt = 100 A/ms5070ns
VR= 30 V TJ = 100°C

R

thJH

3.12 K/W

d

S

Creep distance on surface 12.7 mm

d

A

Strike distance in air 9.4 mm

a Maximum allowable acceleration 50 m/s

2

Symbol Test Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

Rectifier Diodes

V

BR(CES)

VGS = 0 V, IC = 3 mA 1200 V

V

GE(th)

IC = 10 mA 5 7.5 V

I

GES

VGE= ± 20 V 500 nA

I

CES

TVJ = 25°C, VCE = 0.8 V

CES

250 mA

TVJ = 125°C, VCE = 0.8 V

CES

1mA

V

CEsat

VGE = 15 V, IC = 25 A 3.5 V

t

SC

VGE = 15 V, VCE = 0.6 V

CES

, TVJ = 125°C, 10 ms

(SCSOA) R

G

= 4.7 W, non repetitive

I

C

VGE = 15 V, VCE = 0.8 V

CES

, TVJ = 125°C, 50 A

(RBSOA) R

G

= 4.7 W, Clamped Inductive load, L = 100 mH

C

ies

VCE = 25 V, f = 1 MHz, VGE = 0 V 2.9 nF

t

d(on)

100 ns

t

d(off)

220 ns

t

fi

1600 ns

E

on

3.5 mJ

E

off

12 mJ

R

thJH

1 K/W

I

R

VR = V

RRM

,TVJ =25°C 0.1 mA

VR = V

RRM

,TVJ = 150°C3mA

V

F

IF = 25 A, TVJ =25°C 1.16 V

V

T0

For power-loss calculations only 0.8 V

r

T

TVJ = 150°C 12.5 mW

R

thJH

per diode 1.5 K/W

Rectifier Diodes

Fast Recovery Diode

VCE = 600 V, IC = 25 A
VGE = 15 V, RG = 4.7 W
Inductive load; L = 100 mH
TVJ = 125°C

IGBT

Module

749