IXYS VUB50-12PO1, VUB50-16PO1 Datasheet
© 2002 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• three phase mains rectifier
• brake chopper:
- IGBT with low saturation voltage
- HiPerFRED
TM
free wheeling diode
• module package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
Applications
drives with
• mains input
• DC link
• inverter or chopper feeding the machine
• motor and generator/brake operation
V
RRM
= 1200/1600 V
I
dAVM
= 56 A
Input Rectifier D1 - D6
Symbol Conditions Maximum Ratings
V
RRM
1200/1600 V
I
FAV
TC = 100°C; sine 180° 22 A
I
DAVM
TC = 100°C; rectangular; d = 1/3; bridge 56 A
I
FSM
TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
P
tot
TC = 25°C 90 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 45 A; TVJ = 25°C 1.3 1.6 V
TVJ = 125°C 1.2 V
I
R
VR = V
RRM
;TVJ = 25°C 0.2 mA
VR = 0.8 • V
RRM
;TVJ = 125°C 0.4 mA
R
thJC
per diode; rectangular 120° 1.45 K/W
R
thJH
with heat transfer paste 1.8 K/W
Chopper Diode D
Symbol Conditions Maximum Ratings
V
RRM
TVJ = 25°C to 150°C 1200 V
I
F25
DC; TC = 25°C 15 A
I
F80
DC; TC = 80°C 10 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 10 A; TVJ = 25°C 2.6 3.0 V
TVJ = 125°C 1.9 V
I
R
VR = V
RRM
;TVJ = 25°C 0.06 mA
TVJ = 125°C 0.06 mA
I
RM
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
t
rr
VR = 600 V 110 ns
R
thJC
3.5 K/W
R
thJH
with heat transfer paste 5 K/W
214
Advanced Technical Information
VUB 50
V
RRM
Type
V
1200 VUB 50-12 PO1
1600 VUB 50-16 PO1
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System in ECO-PAC 2
D1
D3
D5
D2
D4
D6
K1
D1
G1
A4V16
N7
R9L9X18
D
T
© 2002 IXYS All rights reserved
2 - 2
Chopper Transistor T
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C 1200 V
V
GES
±
20 V
I
C25
DC; TC = 25°C 18 A
I
C80
DC; TC = 80°C 14 A
I
CM
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
V
CEK
RBSOA; L = 100 µH; clamped inductive load V
CES
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 10 A; VGE = 15 V; TVJ = 25°C 2.3 2.7 V
TVJ = 125°C 2.7 V
V
GE(th)
IC = 0.4 mA; VGE = V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.8 mA
I
GES
VCE = 0 V; VGE = ± 20 V 200 nA
t
d(on)
50 ns
t
r
40 ns
t
d(off)
290 ns
t
f
60 ns
E
on
1.2 mJ
E
off
1.1 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
Q
Gon
VCE= 600 V; VGE = 15 V; IC = 10 A 45 nC
R
thJC
1.4 K/W
R
thJH
with heat transfer paste 2.7 K/W
Inductive load, T
VJ
= 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
Dimensions in mm (1 mm = 0.0394")
VUB 50
Module
Symbol Conditions Maximum Ratings
T
VJ
-40...+150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
≤ 1 mA; 50/60 Hz; t = 1 sec 3600 V~
M
d
Mounting torque (M5) 1.5 - 2 Nm
14 - 18 lb.in.
Symbol Conditions Characteristic Values
min. typ. max.
dA, d
S
pin to heatsink 11.2 mm
Weight 24 g
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