IXYS VUB160-16NO1, VUB160-12NO1, VUB120-16NO1, VUB120-12NO1 Datasheet
VUB 120 / 160
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
Preliminary Data
V
Type V
RRM
V V
1200 VUB 120-12 NO1 1600 VUB 120-16 NO1
1200 VUB 160-12 NO1 1600 VUB 160-16 NO1
Symbol Test Conditions Maximum Ratings
V
RRM
I
dAVM
I
FSM
TC= 75°C, sinusoidal 120° 121 157 A
TVJ= 45°C, t = 10 ms, VR = 0 V 650 850 A
TVJ= 150°C, t = 10 ms, VR = 0 V 580 760 A
2
I
t TVJ= 45°C, t = 10 ms, VR = 0 V 2110 3610 A
TVJ= 150°C, t = 10 ms, VR = 0V 1680 2880 A
Rectifier Diodes
P
V
V
I
C25
I
C75
I
CM
P
V
I
FAV
I
FRMS
I
FRM
I
FSM
tot
CES
GE
tot
RRM
TC= 25°C per diode 130 160 W
TVJ= 25°C to 150°C 1200 1200 V
Continuous ± 20 ± 20 V
TC= 25°C, DC 100 150 A
TC= 75°C, DC 71 106 A
IGBTFast Recovery Diode
TC= 75°C, d = 0.5 56 85 A
tp= Pulse width limited by T
TC= 25°C 400 600 W
TC= 75°C, rectangular d = 0.5 25 A
TC= 75°C, rectangular d = 0.5 39 A
TC= 75°C, tP = 10 µs, f = 5 kHz tbd A
TVJ= 45°C, t = 10 ms 200 A
TVJ= 150°C, t = 10 ms 180 A
P
tot
T
VJ
T
VJM
T
stg
V
ISOL
TC= 25°C 100 W
50/60 Hz t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
RRM
Type
VUB 120 VUB160
1200/1600 1200/1600 V
VJM
200 300 A
1200 V
-40...+150 °C
150 °C
-40...+125 °C
V
I
dAVM
= 1200/1600 V
RRM
= 121/157 A
Features
●
Soldering connections for PCB
mounting
●
Isolation voltage 3600 V~
●
Ultrafast diode
●
Convenient package outline
●
UL registered E 72873
●
Case and potting UL94 V-0
●
Thermistor
Applications
●
Drive Inverters with brake system
Advantages
●
2 functions in one package
●
Easy to mount with two screws
●
Suitable for wave soldering
●
High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
M
d
d
S
d
A
Mounting torque (M5) 2-2.5 Nm
Module
(10-32 unf) 18-22 lb.in.
Creep distance on surface 12.7 mm
Strike distance in air 9.4 mm
a Maximum allowable acceleration 50 m/s
Weight typ. 80 g
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
2
0 31
1 - 4
Symbol Test Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
V
BR(CES)
V
GE(th)
I
CES
V
CEsat
t
SC
(SCSOA) R
RBSOA V
VR = V
VR = V
,TVJ =25°C 0.3 mA
RRM
,TVJ = 150°C5mA
RRM
IF = 150 A, TVJ =25°C VUB 120 1.59 V
VUB 160 1.49 V
For power-loss calculations only VUB 120 0.80 V
TVJ = 150°C VUB 120 6.1 mW
Rectifier Diodes
Rectifier Diodes
per diode VUB 120 1.0 K/W
VUB 160 0.75 V
VUB 160 4.6 mW
VUB 160 0.8 K/W
VUB 120 1.3 K/W
VUB 160 1.1 K/W
VGS = 0 V, IC = 3 mA 1200 V
IC = 20 mA VUB 120 58V
IC = 30 mA VUB 160 58V
TVJ = 25°C, VCE = 1200 V VUB 120 0.8 mA
= 125°C, VCE = 0,8 ž V
T
VJ
VUB 160 1.2 mA
VUB 120 3mA
CES
VUB 160 4.5 mA
VGE = 15 V, IC = 50 A VUB 120 2.9 V
V
= 15 V, IC = 75 A VUB 160 2.9 V
GE
VGE = 15 V, VCE = 720 V, TVJ = 125°C,
= 11 W, non repetitive VUB 120 10 ms
G
R
= 7 W, non repetitive VUB 160 10 ms
G
= 15 V, VCE = 960 V, TVJ = 125°C,
GE
Clamped Inductive load, L = 100 mH
= 11 W VUB 120 100 A
R
G
IGBT
R
= 7 W VUB 160 150 A
G
C
t
d(on)
t
d(off)
E
E
R
R
I
R
V
V
r
I
RM
t
rr
R
R
R
ies
on
off
thJC
thJH
F
T0
T
thJC
thJH
25
VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 120 9nF
VUB 160 13.5 nF
300 ns
VCE = 720 V, IC = 50/75 A
VGE = 15 V, RG = 11/7 W
Inductive load; L = 100 mH
TVJ = 125°C
VR= V
VR= 0,8 • V
, TVJ = 25°C 0.75 mA
RRM
, TVJ = 125°C47mA
CES
VUB 120 12 mJ
VUB 160 18 mJ
VUB 120 16 mJ
VUB 160 24 mJ
VUB 120 0.32 K/W
VUB 160 0.21 K/W
VUB 120 0.45 K/W
VUB 160 0.30 K/W
350 ns
IF= 30 A, TVJ =25°C 2.55 V
For power-loss calculations only 1.65 V
TVJ= 150°C 18.2 mW
IF= 30 A, -diF/dt = 240 A/ms, VR = 540 V 16 18 A
IF= 1 A, -diF/dt = 100 A/ms, VR = 30 V 4 0 60 ns
Fast Recovery Diode
1.2 K/W
1.6 K/W
Siemens S 891/2,2/+9 2.2 kW
NTC
VUB 120 / 160
© 2000 IXYS All rights reserved
2 - 4
Loading...