IXYS VTO39-12HO7, VTO39-08HO7, VTO39-06HO7 Datasheet
© 2001 IXYS All rights reserved
1 - 2
VTO 39
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V
700 600 VTO 39-06ho7
900 800 VTO 39-08ho7
1300 1200 VTO 39-12ho7
Three Phase Rectifier Bridge
I
dA V
= 39 A
V
RRM
= 600-1200 V
F
A
N
LI
B
E
G
M
J
H
Features
• Package with DCB ceramic
base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Test Conditions Maximum Ratings
I
dAV
① TC = 85°C, module 39 A
I
TAVM
TC = 85°C; (180° sine ; per thyristor) 16 A
I
TSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
VR = 0 t = 8.3 ms (60 Hz), sine 210 A
TVJ = T
VJM
t = 10 ms (50 Hz), sine 180 A
VR = 0 t = 8.3 ms (60 Hz), sine 190 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 150 A2s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 160 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 150 A2s
(di/dt)
cr
TVJ = T
VJM
repetitive, IT = 20 A 100 A/ms
f =50 Hz, tP =200 ms
VD = 2/3 V
DRM
IG = 0.15 A non repetitive, IT = I
TAVM
500 A/ms
diG/dt = 0.15 A/ms
(dv/dt)
cr
TVJ = T
VJM
;V
DR
= 2/3 V
DRM
500 V/ms
RGK = ¥; method 1 (linear voltage rise)
V
RGM
10 V
P
GM
TVJ = T
VJM
tp = 30 ms £ 5W
IT = I
TAVM
tp = 300 ms £ 2.5 W
P
GAVM
0.5 W
T
VJ
-40...+125 °C
T
VJM
125 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
£ 1 mA t = 1 s 3000 V~
M
d
Mounting torque (M4) 1.5 - 2 Nm
14 - 18 lb.in.
Weight typ. 18 g
Priliminary data
114
© 2001 IXYS All rights reserved
2 - 2
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
D
, I
R
TVJ= T
VJM
; VR = V
RRM
; VD = V
DRM
£ 5mA
V
T
IT= 20 A; TVJ = 25°C £ 1.6 V
V
T0
For power-loss calculations only (TVJ = 125°C) 0.85 V
r
T
27 mW
V
GT
VD = 6 V; TVJ = 25°C £ 1.5 V
TVJ = -40°C £ 2.5 V
I
GT
VD = 6 V; TVJ = 25°C £ 25 mA
TVJ = -40°C £ 50 mA
V
GD
TVJ = T
VJM
;V
D
= 2/3 V
DRM
£ 0.2 V
I
GD
£ 3mA
I
L
TVJ = 25°C; tP = 10 ms £ 75 mA
IG = 0.1 A; diG/dt = 0.1 A/ms
I
H
TVJ = 25°C; VD = 6 V; RGK = ¥ £ 50 mA
t
gd
TVJ = 25°C; VD = 1/2 V
DRM
£ 2 ms
IG = 0.1 A; diG/dt = 0.1 A/ms
R
thJC
per thyristor; DC 1.3 K/W
per module 0.22 K/W
R
thJH
per thyristor; DC 1.8 K/W
per module 0.3 K/W
d
S
Creeping distance on surface 11.2 mm
d
A
Creepage distance in air 5 mm
a Max. allowable acceleration 50 m/s
2
VTO 39
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