IXYS VMO650-01F Datasheet
HiPerFET
TM
MOSFET Module
VMO 650-01F V
I
R
DSS
D25
DS(on)
= 100 V
= 690 A
= 1.8 mW
N-Channel Enhancement Mode
D
G
Preliminary Data
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D80
I
DM
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight typical including screws 250 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
TJ= 25°C to 150°C 100 V
TJ= 25°C to 150°C; RGS = 10 kW 100 V
Continuous ±20 V
Transient ±30 V
TS= 25°C 690 A
TS= 80°C 520 A
TS= 25°C pulse width limited by T
JM
TC= 25°C 2500 W
TS= 25°C 1740 W
-40 ... +125 °C
50/60 Hz t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600
ISOL
Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M5) 2.5-3.7/22-33 Nm/lb.in.
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS= 0 V, ID = 7 mA 100 V
VDS= 20 V, ID = 130 mA 3 6 V
KS
S
2780 A
-40 ...+150 °C
150 °C
E 72873
G
S
D
KS
D = Drain S = Source
KS = Kelvin Source G = Gate
Features
●
International standard package
●
Direct Copper Bonded Al2O3 ceramic
base plate
●
Isolation voltage 3600 V~
●
Low R
●
Low package inductance for high
HDMOSTM process
DS(on)
speed switching
●
Kelvin Source contact for easy drive
Applications
●
AC motor speed control for electric
vehicles
●
DC servo and robot drives
●
Switched-mode and resonant-mode
power supplies
●
DC choppers
Advantages
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions and dimensions.
VGS= ±20 V DC, VDS = 0 ±500 nA
VDS= 0.8 • V
VGS = 0 V TJ = 125°C14mA
VGS= 10 V, ID = 0.5 • I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
DSS
D25
TJ = 25°C 3.5 mA
© 2000 IXYS All rights reserved
1.8 mW
●
Easy to mount
●
Space and weight savings
●
High power density
●
Low losses
750
1 - 2
VMO 650-01F
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g
gs
gd
thJC
thJS
VDS= 10 V; ID = 0.5 • I
VGS = 0 V, VDS = 25 V, f = 1 MHz 20.8 nF
VGS = 10 V, VDS = 0.5 • V
RG = 2 W (external) 800 ns
VGS = 10 V, VDS = 0.5 • V
with 30 mm heat transfer paste 0.072 K/W
pulsed 390 S
D25
59 nF
10.4 nF
250 ns
, ID = 0.5 • I
DSS
D25
500 ns
200 ns
2300 nC
, ID = 0.5 • I
DSS
D25
455 nC
1110 nC
0.048 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
Dimensions in mm (1 mm = 0.0394")
5
I
S
I
SM
V
SD
t
rr
VGS= 0 V 690 A
Repetitive; pulse width limited by T
JM
2760 A
IF = IS; VGS = 0 V, 0.9 1.2 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = IS, -di/dt = 1000 A/ms, VDS = 0.5 • V
DSS
300 ns
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
© 2000 IXYS All rights reserved
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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