IXYS VMO60-05F Datasheet
HiPerFET
TM
Power Module
High dv/dt, Low trr, HDMOSTM Family
VMO 60-05F
V
I
R
D25
DSS
DS(on)
= 500 V
= 60 A
= 65 mW
1
Preliminary Data
5
6
3
Symbol Conditions Maximum Ratings
V
V
V
V
I
I
I
P
T
T
T
V
M
DSS
DGR
GS
GSM
D25
D100
DM
tot
J
JM
stg
ISOL
d
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 10 kW 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 60 A
TC= 100°C 37 A
TC= 25°C, tp = 10 µs, pulse width limited by T
JM
240 A
TC = 25°C 590 W
-40 ... +150 °C
150 °C
-40 ... +125 °C
50/60 Hz, t = 1 min 3000 V~
I
£ 1 mA, t = 1 s 3600 V~
ISOL
Mounting torque(M5 or 10-32 UNF) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Weight Typical including screws 90 g
TO-240 AA
1
1 = Drain 3 = Source
5 = Gate 6 = Kelvin Source
3
6
5
Features
• International standard package
• Direct copper bonded Al2O3 ceramic
base plate
• Isolation voltage 3600 V~
• Low R
HDMOSTM process
DS(on)
Applications
• Switched-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC servo and robot drives
• DC choppers
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
VGS= 0 V 500 V
VDS= VGS, ID = 24 mA 2 4 V
VGS= ±20 V DC, VDS = 0 500 nA
VDS= V
VDS= 0.8 • V
VGS= 10 V, ID = 0.5 • I
,VGS = 0 V, TJ = 25°C 600 µA
DSS
DSS,VGS
= 0 V, TJ = 125°C 3 mA
D25
65 75 mW
Pulse test, t £ 300 µs, duty cycle d £ 2 %
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
943
1 - 2
VMO60-05F
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
d
d
fs
iss
oss
rss
g
gs
gd
thJC
thCH
S
A
VDS= 10 V; ID = 0.5 • I
pulsed 30 60 S
D25
12.6 nF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1.35 nF
0.405 nF
50 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
45 ns
RG = 1 W (External), resistive load 250 ns
30 ns
405 nC
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
90 nC
180 nC
0.21 K/W
heatsink compound applied 0.2 K/W
Creepage distance on surface 12.7 mm
Strike distance through air 9.6 mm
a Allowable acceleration 50 m/s
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
Dimensions in mm (1 mm = 0.0394")
2
I
S
I
SM
V
SD
VGS = 0 V 60 A
Repetitive; pulse width limited by T
JM
240 A
IF = IS; VGS = 0 V, 1.5 V
Pulse test, t £ 300 µs, duty cycle d £ 2%
t
rr
IF = IS, -di/dt = 100 A/µs, VDS = 100 V, VGS = 0 V 250 ns
© 2000 IXYS All rights reserved
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