IXYS VMM45-02F Datasheet

© 2000 IXYS All rights reserved

1 - 2

V

DSS

= 200 V

I

D25

= 45 A

R

DS(on)

= 45 mW

Symbol Conditions Maximum Ratings
V

DSS

TJ= 25°C to 150°C 200 V

V

DGR

TJ= 25°C to 150°C; RGS = 10 kW 200 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

TC= 25°C 45 A

I

D80

TC= 80°C 34 A

I

DM

TC= 25°C, tp = 10 µs, pulse width limited by T

JM

180 A

P

tot

TC = 25°C 190 W

T

J

-40 ... +150 °C

T

JM

150 °C

T

stg

-40 ... +125 °C

V

ISOL

50/60 Hz t = 1 min 3000 V~
I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque(M5 or 10-32 UNF) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.

Weight Typical including screws 90 g

Phaseleg Configuration
High dv/dt, Low trr, HDMOSTM Family

Features

• Two MOSFET's in phaseleg config.

• International standard package

• Direct copper bonded Al2O3 ceramic
base plate

• Isolation voltage 3600 V~

• Low R

DS(on)

HDMOSTM process

Applications

• Switched-mode and resonant-mode

power supplies

• Uninterruptible power supplies (UPS)

Advantages

• Easy to mount with two screws

• Space and weight savings

• High power density

• Low losses

Preliminary Data

Dual Power
HiPerFET

TM

Module

6

5

3

2

1

4

VMM 45-02F

1 = Drain 1 2 = Source 1, Drain 2
3 = Source 2 4 = Kelvin Source 1
5 = Gate 1 6 = Gate 2

TO-240 AA

6

4

5

3

2

1

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

DSS

VGS= 0 V, ID = 1 mA 200 V

V

GS(th)

VDS= VGS, ID = 4 mA 2 4 V

I

GSS

VGS= ±20 V DC, VDS = 0 500 nA

I

DSS

VDS= V

DSS

,VGS = 0 V, TJ = 25°C 15 µA

VDS= 0.8 • V

DSS

,VGS = 0 V, TJ = 125°C 1 mA

R

DS(on)

VGS= 10 V, ID = 0.5 • I

D25

39 45 mW

Pulse test, t £ 300 µs, duty cycle d £ 2%

Data per MOSFET unless otherwise stated.

948

© 2000 IXYS All rights reserved

2 - 2

VMM 45-02F

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

fs

VDS= 10 V; ID = 0.5 • I

D25

pulsed 20 30 S

C

iss

4800 7500 pF

C

oss

VGS = 0 V, VDS = 25 V, f = 1 MHz 900 2250 pF

C

rss

310 750 pF

t

d(on)

40 ns

t

r

VGS = 10 V, VDS = 0.5 • V

DSS

, ID = 0.5 • I

D25

45 ns

t

d(off)

RG = 1 W (External), resistive load 300 ns

t

f

45 ns

Q

g

190 225 nC

Q

gs

VGS = 10 V, VDS = 0.5 • V

DSS

, ID = 0.5 • I

D25

35 55 nC

Q

gd

95 115 nC

R

thJC

0.63K/W

R

thCH

heatsink compound applied 0.3 K/W

d

S

Creepage distance on surface 12.7 mm

d

A

Strike distance through air 9.6 mm

a Allowable acceleration 50 m/s

2

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Conditions min. typ. max.
I

S

VGS = 0 V 45 A

I

SM

Repetitive; pulse width limited by T

JM

180 A

V

SD

IF = IS; VGS = 0 V, 0.9 1.2 V
Pulse test, t £ 300 µs, duty cycle d £ 2%

t

rr

IF = IS, -di/dt = 100 A/µs, 200 400 ns
VDS = 100 V, VGS = 0 V

Dimensions in mm (1 mm = 0.0394")