IXYS VMK165-007T Datasheet
Advanced Technical Information
Dual Power
VMK 165-007T
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
Symbol Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D
I
DM
P
tot
T
J
T
JM
T
stg
V
ISOL
M
d
Weight Typical including screws 90 g
Symbol Conditions Characteristic Values
TJ= 25°C to 150°C70V
TJ= 25°C to 150°C; RGS = 6.8 kW 70 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 165 A
TC= 100°C 104 A
TC= 25°C, tp = 10 µs, pulse width limited by T
TC= 25°C, TJ = 150°C 390 W
50/60 Hz t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque(M5 or 10-32 UNF) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
(TJ = 25°C, unless otherwise specified)
4213657
660 A
JM
-40 ... +150 °C
150 °C
-40 ... +125 °C
min. typ. max.
V
I
R
DSS
D25
DS(on)
= 70 V
= 165 A
=7 mW
TO-240 AA
E 72873
2
1
7
4
5
6
3
1, 3 = Drain, 2 = Common Source
5, 6 = Gate, 4, 7 = Kelvin Source
Features
• Two MOSFET with common source
• International standard package
JEDEC TO-240 AA
• Direct copper bonded Al
ceramic
2O3
base plate
• Isolation voltage 3000 V~
• Low R
• Low package inductance for high
HDMOSTM process
DS(on)
speed switching
• Kelvin source contact
• Keyed twin plugs
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
VGS= 0 V, ID = 1 mA 70 V
VDS= VGS, ID = 8 mA 2 4 V
VGS= ±20 V DC, VDS = 0 500 nA
VDS= V
VDS= 0.8 • V
,V
DSS
,VGS = 0 V, TJ = 125°C1mA
DSS
VGS= 10 V, ID = 0.5 • I
Pulse test, t £ 300 µs, duty cycle d £ 2 %
Data per MOSFET unless otherwise stated.
© 2000 IXYS All rights reserved
= 0 V, TJ = 25°C 200 µA
GS
D25
67mW
Applications
• Push-pull inverters
• Switched-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• AC static switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
023
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VMK 165-007T
Symbol Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
d
d
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
thJC
thCH
S
A
VDS= 10 V; ID = 0.5 • I
pulsed 60 80 S
D25
8.8 nF
VGS = 0 V, VDS = 25 V, f = 1 MHz 4.0 nF
2.4 nF
120 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
280 ns
RG = 1 W (External), resistive load 390 ns
110 ns
480 nC
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
60 nC
240 nC
0.32 K/W
with heat transfer paste 0.2 K/W
Creepage distance on surface 12.7 mm
Strike distance through air 9.6 mm
a Max. allowable acceleration 50 m/s
Source-Drain Diode
TO-240 AA Outline
Dimensions in mm (1 mm = 0.0394")
2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
I
S
I
SM
V
SD
VGS = 0 V 165 A
Repetitive; pulse width limited by T
JM
660 A
IF = IS; VGS = 0 V, 1.5 V
Pulse test, t £ 300 µs, duty cycle d £ 2 %
t
rr
IF = 50 A, -di/dt = 200 A/µs, 150 ns
VDS = 25 V, VGS = 0 V
© 2000 IXYS All rights reserved
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