IXYS VKO55-16IO7, VKO55-14IO7, VKO55-12IO7, VKO55-08IO7, VKF55-16IO7 Datasheet
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VHF 55 VHO 55
VKO 55 VKF 55 VGO 55
Single Phase
Rectifier Bridge
Preliminary data
V
RSM
V
DSM
VV
800 800 xxx 55-08io7
1200 1200 xxx 55-12io7
1400 1400 xxx 55-14io7
1600 1600 xxx 55-16io7
Symbol Test Conditions Maximum Ratings
I
dAV
I
① module 53 A
dAVM
I
, I
FRMS
I
, I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1520 A2s
(di/dt)
(dv/dt)
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight 110 g
V
RRM
V
DRM
Type
VGO 55
VHF 55VHO 55
xxx = type
VKF 55
VKO 55
① TK = 85°C, module 53 A
TRMS
TSM
per leg 41 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 550 A
VR = 0 V t = 8.3 ms (60 Hz), sine 600 A
TVJ = T
VJM
VR = 0 V t = 8.3 ms (60 Hz), sine 550 A
t = 10 ms (50 Hz), sine 500 A
VR = 0 V t = 8.3 ms (60 Hz), sine 1520 A2s
T
= T
VJ
VJM
VR = 0 V t = 8.3 ms (60 Hz), sine 1250 A2s
cr
TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f = 50 Hz, tP = 200 ms
VD = 2/3 V
IG = 0.3 A, non repetitive, IT = 1/2 • I
DRM
diG/dt = 0.3 A/ms
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
; VDR = 2/3 V
VJM
t = 10 ms (50 Hz), sine 1250 A2s
dAV
DRM
500 A/ms
1000 V/ms
10 V
TVJ = T
IT = I
TAVM
VJM
tp = 30 ms £ 10 W
tp = 500 ms £ 5W
tp = 10 ms £ 1W
0.5 W
-40...+125 °C
125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque (M5) 5 ± 15 % Nm
(10-32 UNF) 44 ± 15 % lb.in.
I
dAV
V
= 53 A
= 800-1600 V
RRM
Features
• Package with copper base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• 1/4" fast-on power terminals
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
Symbol Test Conditions Characteristic Values
VHF55 VHO55
VKO55 VKF55 VGO55
ID, I
V
V
r
T
V
I
GT
V
I
GD
I
L
I
H
t
gd
t
q
R
R
T
T0
GT
GD
thJC
thJK
R
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
£ 5mA
IT= 80 A; TVJ = 25°C £ 1.64 V
For power-loss calculations only 0.85 V
11 mW
VD = 6 V; TVJ = 25°C £ 1.5 V
TVJ = -40°C £ 1.6 V
VD = 6 V; TVJ = 25°C £ 100 mA
TVJ = -40°C £ 200 mA
TVJ = T
;V
VJM
D
= 2/3 V
DRM
£ 0.2 V
£ 5mA
TVJ = 25°C; tP = 10 ms £ 450 mA
IG = 0.45 A; diG/dt = 0.45 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥£200 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.45 A; diG/dt = 0.45 A/ms
TVJ = T
VR = 100 V; dv/dt = 15 V/ms; VD = 2/3 V
; IT = 20 A, tP = 200 ms; di/dt = -10 A/ms typ. 250 ms
VJM
DRM
DRM
£ 2 ms
per thyristor / Diode; DC 0.9 K/W
per module 0.18 K/W
per thyristor / Diode; DC 1.1 K/W
per module 0.22 K/W
d
S
d
A
a Max. allowable acceleration 50 m/s
Creeping distance on surface 16.1 mm
Creepage distance in air 7.1 mm
2
© 2000 IXYS All rights reserved
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